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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Number | Title | Issue Date |
| 7423286 | Laser transfer article and method of making The present invention is directed to methods for transferring pre-formed electronic devices, such as transistors, resistors, capacitors, diodes, semiconductors, inductors, conductors, and dielectrics, and segments of materials, such as magnetic materials and crystal... | 09/09/2008 |
| 7145243 | Photo-thermal induced diffusion Formation of a mixed-material composition through diffusion using photo-thermal energy. The diffusion may be used to create electrically conductive traces. The diffusion may take place between material layers on one of a package substrate, semiconductor substrate, s... | 12/05/2006 |
| 6818966 | Method and structure for controlling surface properties of dielectric layers in a thin film component for improved trimming A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin f... | 11/16/2004 |
| 6700161 | Variable resistor structure and method for forming and programming a variable resistor for electronic circuits A non-ablative structure and method for forming a variable resistor includes providing a programmable resistive element including two or more different conductive materials, and changing a resistance of the programmable resistive element to a finite value... | 03/02/2004 |
| 6683365 | Edge intensive antifuse device structure An antifuse including a bottom plate having a plurality of longitudinal members arranged substantially parallel to a first axis, a dielectric layer formed on the bottom plate, and a top plate having a plurality of longitudinal members arranged substantial... | 01/27/2004 |
| 6649451 | Structure and method for wafer comprising dielectric and semiconductor Wafers of the present invention comprise a semiconductor layer and a dielectric layer. The semiconductor layer is patterned to form semiconductor regions, and the dielectric layer is deposited on top of the semiconductor layer. Chemical mechanical planari... | 11/18/2003 |
| 6649997 | Semiconductor device having fuses or anti-fuses A laminated dummy pattern formed of plural metals including aluminum and tungsten is formed below a fuse or anti-fuse and an influence by application of laser energy at the time of laser blow on an wiring or element can be prevented.... | 11/18/2003 |
| 6541868 | Interconnecting conductive links Conductive links are provided between conductive materials, e.g., metals, separated by a non-conductive material, e.g., a silicon based glass material. In a preferred embodiment a single pulse of laser energy is applied to at least one of the conductive m... | 04/01/2003 |
| 6509650 | Electronic device, and method of patterning a first layer The electronic device (1) has a layer (11) of a material comprising a first and a second element. This material has an amorphous and a crystalline state. A transition from the amorphous to the crystalline state can be effected by heating of the material t... | 01/21/2003 |
| 6498056 | Apparatus and method for antifuse with electrostatic assist A structure and method for providing an antifuse which is closed by laser energy with an electrostatic assist. Two or more metal segments are formed over a semiconductor structure with an air gap or a porous dielectric between the metal segments. Pulsed l... | 12/24/2002 |
| 6472253 | Programmable semiconductor device structures and methods for making the same A programmable device and methods for making the programmable device are provided. The programmable device includes a link metallization line with an oxide layer defined above the link metallization line. A via hole is patterned in the oxide layer which d... | 10/29/2002 |
| 6344679 | Diode with alterable conductivity and method of making same A semiconductor device (102) having a plurality of diodes (100) with alterable electrical conductivity by a source of energy (30), e.g., a laser, external to the semiconductor device. The diodes are formed and energy is applied to alter the electrical con... | 02/05/2002 |
| 6258633 | Laser-programmable interconnect process for integrated circuit chips A method for producing an interconnect from a first metal trace, through a dielectric, to a second metal trace. The method comprises the steps of heating a portion of the first metal trace to cause thermal expansion and at least partial melting thereof an... | 07/10/2001 |
| 6255671 | Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive metal region that is formed within and from the metal nitride... | 07/03/2001 |
| 6252293 | Laser antifuse using gate capacitor An integrated circuit laser antifuse is described which has two physical states. In the first physical state the laser antifuse has to conductive plates electrically separated by a layer of dielectric material. In the second physical state the two conduct... | 06/26/2001 |
| 6246102 | Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture An integrated circuit includes conductive elements and a radiation sensitive material interposed between the conductive elements and dosed to different conductivities in different portions thereof. Another aspect is a process of integrated circuit fabrica... | 06/12/2001 |
| 6197621 | Custom laser conductor linkage for integrated circuits An integrated circuit includes a substrate with doped regions, a patterned polysilicon layer defining contacts and local interconnects, a submetal dielectric, a two-metal layer metal interconnect structure with an intermetal dielectric layer, and a passiv... | 03/06/2001 |
| 6069076 | Method of making a semiconductor device with changeable interconnection A method of manufacturing a semiconductor device having the steps of: preparing a semiconductor device structure having an interconnection structure including a pair of electrically separated interconnections disposed near each other in one layer and a co... | 05/30/2000 |
| 6060330 | Method of customizing integrated circuits by selective secondary deposition of interconnect material A method for fabricating custom integrated circuits includes the steps of 1) patterning the layer to be customized with a standard precision mask to define all possible connections, vias or cut-points, and 2) using a targeting energy beam to select the de... | 05/09/2000 |
| 5989783 | Method of customizing integrated circuits by depositing two resist layers to selectively pattern layer interconnect material A method for fabricating custom integrated circuits includes the steps of 1) patterning a photoresist layer on an insulative layer with a standard via precision mask to define all possible vias, and 2) using a targeting energy beam to select the desired v... | 11/23/1999 |
| 5940727 | Technique for producing interconnecting conductive links A method for providing a lateral conductive link between conductive elements, e.g., metals, placed on a first non-conductive material, wherein a second non-conductive material is placed on said first non-conductive material to form an interface therebetwe... | 08/17/1999 |
| 5936297 | Programmable semiconductor element having an antifuse structure A programmable semiconductor element having an antifuse structure is disclosed. A first insulation film is formed on a silicon substrate. First and second conductors are formed on the first insulation film. The first and second conductors are spaced apart... | 08/10/1999 |
| 5923960 | Method of making a custom laser conductor linkage for the integrated circuits An integrated circuit includes a substrate with doped regions, a patterned polysilicon layer defining contacts and local interconnects, a submetal dielectric, a two-metal layer metal interconnect structure with an intermetal dielectric layer, and a passiv... | 07/13/1999 |
| 5920789 | Technique for producing interconnecting conductive links Conductive links are provided between conductive materials, e.g., metals, separated by a non-conductive material, e.g., a silicon-based glass material. In a preferred embodiment, a single pulse of laser energy is applied to at least one of the conductive ... | 07/06/1999 |
| 5911850 | Separation of diced wafers A method and tool are disclosed for separating a diced magnetic disk file slider from a tape to be removed by a picker. The diced slider is adhesively mounted on a wafer tape, at its attachment surface, with the air bearing surface away from the tape. The... | 06/15/1999 |
| 5904507 | Programmable anti-fuses using laser writing Disclosed is a method of fabricating a programmable antifuse structure wherein programming of the antifuse structure results in conducting paths which are confined within a finite predictable area. The method includes depositing an insulating layer over a... | 05/18/1999 |
| 5861325 | Technique for producing interconnecting conductive links A method for providing a conductive link between conductive materials, e.g., metals, separated by a non-conductive material, e.g., a silicon based glass material. In a preferred embodiment a single pulse of laser energy is applied to at least one of the c... | 01/19/1999 |
| 5840627 | Method of customizing integrated circuits using standard masks and targeting energy beams for single resist development A method for fabricating custom integrated circuits includes the steps of 1) patterning the layer to be customized with standard precision masking techniques to define all possible connections, vias or cut-points, and 2) using a non-precision targeting en... | 11/24/1998 |
| 5811869 | Laser antifuse using gate capacitor An integrated circuit laser antifuse is described which has two physical states. In the first physical state the laser antifuse has to conductive plates electrically separated by a layer of dielectric material. In the second physical state the two conduct... | 09/22/1998 |
| 5793095 | Custom laser conductor linkage for integrated circuits An integrated circuit includes a substrate with doped regions, a patterned polysilicon layer defining contacts and local interconnects, a submetal dielectric, a two-metal layer metal interconnect structure with an intermetal dielectric layer, and a passiv... | 08/11/1998 |
| 5689428 | Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture An integrated circuit includes conductive elements and a radiation sensitive material interposed between the conductive elements and dosed to different conductivities in different portions thereof. Another aspect is a process of integrated circuit fabrica... | 11/18/1997 |
| 5652169 | Method for fabricating a programmable semiconductor element having an antifuse structure A programmable semiconductor element having an antifuse structure and a method for fabricating the same is disclosed. The fabrication method for a programmable semiconductor element having an antifuse structure includes processes for forming a first insul... | 07/29/1997 |
| 5585602 | Structure for providing conductive paths A method for forming one or more conductive paths by providing a first pattern of pre-formed conductive elements and a second pattern of preformed conductive elements in a substrate and forming, at a single level, one or more lateral conductive links betw... | 12/17/1996 |
| 5528072 | Integrated circuit having a laser connection of a conductor to a doped region of the integrated circuit The conductor 15 to be connected to the doped region 12 of the substrate 11 has an edge 15a at which the laser beam 20 is aimed, regulated such as to definitively create a zone of low electrical resistance 19 in the dielectric layer 13 that separates the ... | 06/18/1996 |
| 5485032 | Antifuse element with electrical or optical programming A programmable antifuse element comprising adjacent bodies of germanium and aluminum or aluminum allow form a low resistance connection of good mechanical and thermal properties when heated to a temperature where alloying of the aluminum and germanium occ... | 01/16/1996 |
| 5314840 | Method for forming an antifuse element with electrical or optical programming A programmable antifuse element comprising adjacent bodies of germanium and aluminum or aluminum alloy form forming a low resistance connection of good mechanical and thermal properties when heated to a temperature where alloying of the aluminum and germa... | 05/24/1994 |
| 5281553 | Method for controlling the state of conduction of an MOS transistor of an integrated circuit The state of conduction of an MOS transistor 11 is definitively controlled by a laser beam 21, by forming an electrical connection 22 between the gate 16 and the subjacent portion d of the source region 14 or drain region 15. The invention is applicable i... | 01/25/1994 |
| 5270251 | Incoherent radiation regulated voltage programmable link The present invention discloses an incoherent radiation regulated voltage programmable link circuit and a method for making the circuit. The voltage programmable link circuit lowers the programming voltage of the link to that of the normal operating volta... | 12/14/1993 |
| 5231050 | Method of laser connection of a conductor to a doped region of the substrate of an integrated circuit The conductor 15 to be connected to the doped region 12 of the substrate 11 has an edge 15a at which the laser beam 20 is aimed, regulated such as to definitively create a zone of low electrical resistance 19 in the dielectric layer 13 that separates the ... | 07/27/1993 |
| 5182231 | Method for modifying wiring of semiconductor device The wiring of a semiconductor device having a multilayer interconnection on a semiconductor substrate is modified. A plurality of fine holes are formed on an insulation film by the radiation of a converged energy beam to expose selected ones of the intern... | 01/26/1993 |
