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| Number | Title | Issue Date |
| 7371696 | Carbon nanotube structure and method of vertically aligning carbon nanotubes A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the po... | 05/13/2008 |
| 7332736 | Article comprising gated field emission structures with centralized nanowires and method for making the same This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central regions within gate apertures. It also provides novel devices using nano... | 02/19/2008 |
| 7316982 | Controlling carbon nanotubes using optical traps An embodiment of the present invention is a technique to control carbon nanotubes (CNTs). A laser beam is focused to a carbon nanotube (CNT) in a fluid. The CNT is responsive to a trapping frequency. The CNT is manipulated by controlling the focused laser beam. ... | 01/08/2008 |
| 7294877 | Nanotube-on-gate FET structures and applications Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region o... | 11/13/2007 |
| 7268423 | Flexible rewiring plate for semiconductor components, and process for producing it The present invention describes a rewiring plate for components with connection grids of between approx. 100 nm and 10 μm, which rewiring plate includes a base body and passages with carbon nanotubes, the lower end of the passages opening out into contact connectio... | 09/11/2007 |
| 7211854 | Field effect devices having a gate controlled via a nanotube switching element Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a r... | 05/01/2007 |
| 6297063 | In-situ nano-interconnected circuit devices and method for making the same A circuit device is disclosed comprising at least two circuit layers interconnected with a plurality of substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the lengt... | 10/02/2001 |
