Class 257/E23.071 - For devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E23.07. This subclass
No. of patents: 20
Last issue date: 05/15/2007

Number	Title	Issue Date
7217597	Die stacking scheme An improved semiconductor die stacking scheme is provided. In accordance with one embodiment of the present invention, a method of stacking a plurality of semiconductor die is provided. In accordance with another embodiment of the present invention a multiple die se...	05/15/2007
6670216	Method for manufacturing a power semiconductor device and direct bonded substrate thereof Embodiments of the present invention are directed to packaged power semiconductor devices and direct-bonded metal substrates thereof. In one embodiment, a method for manufacturing a power semiconductor device comprises inserting a substrate assembly into ...	12/30/2003
6611049	Semiconductor device with chamfered substrate and method of making the same A semiconductor device includes an insulating substrate, a cutout formed in side surfaces of the substrate, a conductive pad formed on the obverse surface of the substrate, an electrode formed on the reverse surface of the substrate, a semiconductor chip ...	08/26/2003
6455925	Power transistor package with integrated flange for surface mount heat removal A transistor package comprises a first layer in which a thermally conductive flange is integrated into a dielectric substrate layer, a transistor attached to the flange, and input and output contacts coupled to the transistor. The transistor package is at...	09/24/2002
5637922	Wireless radio frequency power semiconductor devices using high density interconnect A power device component package includes a substrate supporting a drain lead, a source lead, and a gate lead. Each of the leads comprises an electrically conductive material having a thickness sufficient to form a high current contact. A power device com...	06/10/1997
5338974	RF power transistor package An RF power transistor is mounted on a ceramic substrate with a plurality of input leads extending from one edge of the substrate, a plurality of output leads extending from an opposite edge of the substrate, a plurality of input ground leads with ground ...	08/16/1994
5324570	Microelectronics package A microelectronics substrate assembly comprising: an advanced ceramics substrate having a top surface and a bottom surface; a first metallized distribution plane on said top surface and a second metallized distribution plane on said bottom surface; an ele...	06/28/1994
5198886	Semiconductor device having a clamping support A semiconductor device comprising a support (1) provided with a groove (2) having walls (3 and 4), on which conductors (6 and 7) are present, which conductors extend at least partially around the support (1), and with a semiconductor element (11) which is...	03/30/1993
5148264	High current hermetic package A package for a device comprises a header having a substantially flat upper surface. An insulating disk is affixed to the upper surface of the header for having the device mounted thereon. A barrel having upper and lower portions of respectively greater a...	09/15/1992
5023703	Semiconductor device A semiconductor device comprising a metal base providing a metal case and a through-passage connecting the inside and outside of said metal case, an electric terminal which provides a bridge selectively deposited on the insulator base allowing formation o...	06/11/1991
4908694	Semiconductor device A semiconductor device including a metal base, a metal case and a through-passage connecting the inside and outside of the metal case, an electric terminal which provides a bridge selectively deposited on an insulator base allowing formation of conductive...	03/13/1990
4891686	Semiconductor packaging with ground plane conductor arrangement Packaging techniques are described which provide electrical, thermal, and mechanical advantages. A low-profile semiconductor package is described in which the leads are flat and are present in the same plane. The leads are arranged and positioned in order...	01/02/1990
4710795	Semiconductor power module A semiconductor power module includes at least two mutually parallel ceramic substrates each having two sides, metallizations disposed on at least one side of each of the substrates, at least one controlled semiconductor power component disposed between e...	12/01/1987
4702003	Method of fabricating a freestanding semiconductor connection A method is disclosed for bonding a minute semiconductor device to the freestanding end of a flexible microcircuit. The method generally comprises a series of steps including initially bonding the semiconductor device to a substrate for handling during th...	10/27/1987
4527010	Electronic part mounting construction and method for manufacturing the same An electronic part mounting construction, such as a transistor package or a substrate for a resin mold device, has a substrate for mounting an electronic part on a principal surface, at least one metallized layer deposited on the principal surface and sol...	07/02/1985
4297722	Ceramic package for semiconductor devices having metalized lead patterns formed like a floating island A transistor device which is suitable for a high-frequency and high-power transistor is disclosed. The transistor device comprises a first ceramic plate and a second ceramic plate mounted on the first ceramic plate. The first ceramic plate is provided wit...	10/27/1981
4246697	Method of manufacturing RF power semiconductor package High frequency power transistor carriers are made by bonding a metalized ceramic base to a lead frame strip, subsequently gold plating the resultant structure and then cutting the lead frame strip to isolate the base and collector leads while still mainta...	01/27/1981
4067041	Semiconductor device package and method of making same The specification discloses a semiconductor device package which includes a conductive heat sink support member which is bonded to a planar face of a ceramic body. A conductive pattern is formed on a second planar face of the ceramic body and includes at ...	01/03/1978
4009485	Semiconductor pellet assembly mounted on ceramic substrate Disclosed is an isolated semiconductor assembly with a pellet mounting plate having a beveled periphery and surmounted by a semiconductor pellet. A ribbon-shaped lead overhangs the edge of the top of the pellet and terminates in the plane of the lower sid...	02/22/1977
3950843	Continuous film transistor fabrication process A continuous film transistor fabrication process utilizes a roll of polyimide substrate film on which a plurality of groups of three metal contacts is patterned. The edges of the film are turned under, including portions of the metal contacts, to facilita...	04/20/1976

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Class 257/E23.071 - For devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO)