Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 7432584 | Leadframe for use in a semiconductor package A leadframe comprises a die mounting area, a plurality of lead fingers and a metal deposit having a negative electrochemical potential with respect to a standard H2 half cell. A semiconductor package comprises the leadframe and a semiconductor chip having... | 10/07/2008 |
| 7368326 | Methods and apparatus to reduce growth formations on plated conductive leads A process includes annealing one or more plated conductive leads at a predetermined temperature. The one or more plated conductive leads are plated with one or more layers, where each layer comprises a material. The predetermined temperature is greater than or equal... | 05/06/2008 |
| 7329944 | Leadframe for semiconductor device A leadframe for a semiconductor device of the present invention is a leadframe for a semiconductor device having a stage section where a semiconductor chip is to be mounted, an inner lead section connected to the stage section, and an outer lead section connected to... | 02/12/2008 |
| 7262440 | Light emitting diode package and fabrication method thereof The present invention provides a light emitting diode (LED) package and the fabrication method thereof. The LED package includes a lower metal layer, and a first silicon layer, a first insulation layer, a second silicon layer, a second insulation layer, and a packag... | 08/28/2007 |
| 7256481 | Leadframes for improved moisture reliability and enhanced solderability of semiconductor devices A semiconductor device has a leadframe with a structure made of a base metal (105), wherein the structure consists of a chip mount pad (302) and a plurality of lead segments (303). Covering the base metal are, consecutively, a continuous nickel ... | 08/14/2007 |
| 7202113 | Wafer level bumpless method of making a flip chip mounted semiconductor device package A wafer level bumpless method of making flip chip mounted semiconductor device packages is disclosed. The method includes the steps of solder mask coating a semiconductor die wafer frontside, processing the solder mask coating to reveal a plurality of gate contact a... | 04/10/2007 |
| 7172958 | High-frequency wiring structure and method for producing the same A high-frequency wiring structure includes a microstrip line having a ground conductor, a dielectric disposed on the ground conductor, and a transmission conductor that is at least partially disposed in the dielectric. The transmission conductor is defined by a flat... | 02/06/2007 |
| 6692992 | Hardened Fe-Ni alloy for the manufacture of integrated circuit leaderframes and manufacturing process A method of making a Fe-Ni strip whose chemical composition comprises, by weight: 36% ࣘNi+Coࣘ43%; 0%ࣘCoࣘ3%; 0.05%ࣘCࣘ0.4%; 0.2%ࣘCrࣘ1.5%; 0.4%ࣘMoࣘ3%; Cuࣘ3%; Siࣘ0.3%, Mnࣘ0.3%; the rest being iron and impurities, the alloy havin... | 02/17/2004 |
| 6592810 | FE-NI ALLOY HAVING HIGH STRENGTH AND LOW THERMAL EXPANSION, A SHADOW MASK MADE OF THE ALLOY, A BRAUN TUBE WITH THE SHADOW MASK, A LEAD FRAME MADE OF THE ALLOY AND A SEMICONDUCTOR ELEMENT WITH LEAD FRAME Disclosed is an Fe--Ni alloy consisting of, by mass, 30 to 50% of Ni (or 27 to 47% Ni and not more than 22% Co), 0.005 to 0.1% of Nb, less than 0.01% of C, 0.002 to 0.02% of N, and the balance of Fe and inevitable impurities, wherein the equation "0.00001... | 07/15/2003 |
| 6544820 | Plastic lead frames for semiconductor devices, packages including same, and methods of fabrication A conductive plastic lead frame and method of manufacturing the same suitable for use in IC packaging. In a preferred embodiment, the lead frame is constructed of a plastic or polymer based lead frame structure with an intrinsic conductive polymer coating... | 04/08/2003 |
| 6376905 | Semiconductor package A resin encapsulated semiconductor package, which uses leads (lead frame), and enhances heat conducting properties and prevents breaking of lengths of bonding wire, reduction in service life of solder joints and crack of a resin while ensuring reliability... | 04/23/2002 |
| 6323543 | Plastic lead frames for semiconductor devices, packages including same, and methods of fabrication A conductive plastic lead frame and method of manufacturing same suitable for use in IC packaging. In a preferred embodiment, the lead frame is constructed of a plastic or polymer based lead frame structure with an intrinsic conductive polymer coating. In... | 11/27/2001 |
| 6316824 | Plastic leads frames for semiconductor devices A conductive plastic lead frame and method of manufacturing same suitable for use in IC packaging. In a preferred embodiment, the lead frame is constructed of a plastic or polymer based lead frame structure with an intrinsic conductive polymer coating. In... | 11/13/2001 |
| 6294410 | Plastic lead frames for semiconductor devices, packages including same, and methods of fabrication A conductive plastic lead frame and method of manufacturing same suitable for use in IC packaging. In a preferred embodiment, the lead frame is constructed of a plastic or polymer based lead frame structure with an intrinsic conductive polymer coating. In... | 09/25/2001 |
| 6215185 | Power semiconductor module An object is to obtain long-term reliability of an electric connection in a power semiconductor module. In a power semiconductor module, the main circuit interconnection directly connected to a power semiconductor chip (3) is formed of a busbar (6) and th... | 04/10/2001 |
| 6215166 | Radio frequency electronic device and method for regulating an amount of power delivered to a radio frequency electronic device The device (10) includes a semiconductor die (12) positioned to receive a fluid cooling medium (45) and a power input lead (25) attached to the semiconductor die. The power input lead having a characteristic such that at a first temperature a first curren... | 04/10/2001 |
| 6215191 | Compliant lead structures for microelectronic devices A method of treating a lead in a chip package. A conductive lead is positioned such that it extends across a gap in a dielectric substrate and is secured at either end to a first surface of the substrate. Directed energy is then applied to a desired porti... | 04/10/2001 |
| 6153031 | Lean, high conductivity, relaxation-resistant beryllium-nickel-copper alloys A higher order beryllium-nickel-copper alloy a process for making the same, and an article of manufacture comprising the alloy, the alloy being represented by the formula (0.15-0.5% Be)+(0.40-1.25% Ni)+(0-0.25% Sn)+[0.06-1% Zr) and/or (0.06-1% Ti)], the b... | 11/28/2000 |
| 6149741 | Copper-based alloy having a high electrical conductivity and a high softening temperature for application in electronics A method for forming supports for use in electronic components. A plate of copper-based alloy including from 0.1 to 1.0% by weight nickel, and from 0.005 to 0.1% by weight of phosphorus is melted and cast. The alloy includes fine precipitates of nickel ph... | 11/21/2000 |
| 6139977 | Palladium surface coating suitable for wirebonding and process for forming palladium surface coatings A surface finish which provides improved wirebonding performance for integrated circuit packages is disclosed. The surface finish which is formed on a substrate includes a palladium layer and one or more material layers. The one or more material layers ar... | 10/31/2000 |
| 6132529 | Leadframe made of a high-strength, high-electroconductivity copper alloy A leadframe of a single frame structure for supporting leads on IC chips. The leadframe is made of a high-strength, high-electroconductivity copper alloy. The copper alloy is produced by preparing an ingot of a copper alloy of 0.05-0.40 wt. % Fe, 0.05-0.4... | 10/17/2000 |
| 6124151 | Plastic lead frames for semiconductor devices, packages including same, and methods of fabrication A conductive plastic lead frame and method of manufacturing same suitable for use in IC packaging. In a preferred embodiment, the lead frame is constructed of a plastic or polymer based lead frame structure with an intrinsic conductive polymer coating. In... | 09/26/2000 |
| 6117566 | Lead frame material A lead frame material, which can be provided with an etching stop layer without requiring a troublesome process such as vapor deposition and has an excellent heat-resistance, is obtained by forming a nickel-phosphorus alloy layer (B) of 1.6 to 10 μm thic... | 09/12/2000 |
| 6091136 | Plastic lead frames for semiconductor devices A conductive plastic lead frame and method of manufacturing same suitable for use in IC packaging. In a preferred embodiment, the lead frame is constructed of a plastic or polymer based lead frame structure with an intrinsic conductive polymer coating. In... | 07/18/2000 |
| 6001196 | Lean, high conductivity, relaxation-resistant beryllium-nickel-copper alloys A higher order beryllium-nickel-copper alloy a process for making the same, and an article of manufacture comprising the alloy, the alloy being represented by the formula (0.15-0.5% Be) +(0.40-1.25% Ni)+(0-0.25% Sn)+[(0.06-1% Zr) and/or (0.06-1% Ti)], the... | 12/14/1999 |
| 5993574 | Lean, high conductivity, relaxation-resistant beryllium-nickel-copper alloys A higher order beryllium-nickel-copper alloy a process for making the same, and an article of manufacture comprising the alloy, the alloy being represented by the formula (0.15-0.5% Be)+(0.40-1.25% Ni)+(0-0.25% Sn)+[(0.06-1% Zr) and/or (0.06-1% Ti)], the ... | 11/30/1999 |
| 5976915 | Low mutual inductance lead frame device A packaged semiconductor device, such as a lead frame device, includes a circuit supported within an enclosure. The circuit is coupled to a plurality of conductive leads within the enclosure. The leads extend from the enclosure for electrically coupling t... | 11/02/1999 |
| 5966592 | Structure and method for making a compliant lead for a microelectronic device A method of treating a lead in a chip package. A conductive lead is positioned such that it extends across a gap in a dielectric substrate and is secured at either end to a first surface of the substrate. Directed energy is then applied to a desired porti... | 10/12/1999 |
| 5945732 | Apparatus and method of manufacturing a warp resistant thermally conductive integrated circuit package An integrated circuit package for improved warp resistance and heat dissipation is described. The LOC package includes: an integrated circuit die having an upper, active face, and a multi-layered, substantially planar lead frame mounted to the active face... | 08/31/1999 |
| 5888848 | Connection leads for an electronic component Martensitic or austenitic structural-hardening conductive alloy connection leads. Electronic component and fabrication process.... | 03/30/1999 |
| 5879965 | Plastic lead frames for semiconductor devices, packages including same, and methods of fabrication A conductive plastic lead frame and method of manufacturing same, suitable for use in IC packaging. In a preferred embodiment the lead frame is constructed of a plastic or polymer based lead frame structure with an intrinsic conductive polymer coating. In... | 03/09/1999 |
| 5880520 | Low mutual inductance lead frame device A packaged semiconductor device, such as a lead frame device, includes a circuit supported within an enclosure. The circuit is coupled to a plurality of conductive leads within the enclosure. The leads extend from the enclosure for electrically coupling t... | 03/09/1999 |
| 5814168 | Process for producing high-strength, high-electroconductivity copper-base alloys High-strength, high-electroconductivity copper alloys are produced by preparing an ingot of a copper alloy containing 0.05-0.40 wt % Fe, 0.05-0.40 wt % Ni, 0.01-0.30 wt % P, and optionally a total of 0.03-0.50 wt % of either Sn or Zn or both and a total o... | 09/29/1998 |
| 5792286 | High-strength thin plate of iron-nickel-cobalt alloy excellent in corrosion resisitance, repeated bending behavior and etchability, and production thereof A high-strength thin plate, such as for IC lead frames, of an iron-nickel-cobalt alloy which is able to withstand repeated bending and is corrosion resistance and etchable, the alloy containing 27 to 30 wt. % N:, 5 to 18 wt. % Co, 0.10 to 3.0 wt. % Mn, 0.... | 08/11/1998 |
| 5744868 | Encapsulated electronic component having a plurality of connection leads of martensitic structural-hardening conductive alloy An encapsulated electronic component containing a plurality of connection leads and an outer case, where the connection leads extend externally to the outer case and contain martensitic structural-hardening conductive alloy.... | 04/28/1998 |
| 5728599 | Printable superconductive leadframes for semiconductor device assembly Process for manufacturing a high interconnection density, fine-line, superconductive printed leadframes using thick-film screen-printing techniques, or other printing techniques. Generally, a superconductive leadframe pattern is printed on a backing subst... | 03/17/1998 |
| 5593918 | Techniques for forming superconductive lines Various techniques for forming superconductive lines are described whereby superconductive lines can be formed by stamping, etching, polishing, or by rendering selected areas of a superconductive film (layer) non-superconductive. The superconductive mater... | 01/14/1997 |
| 5585195 | Metal insert and rough-surface treatment method thereof A metal insert at least partially embedded in a molded resin mass comprises a metal insert blank, and a substantial amount of nickel or nickel alloy granulations produced over a surface of the metal insert blank, and the size of the granulations is at mos... | 12/17/1996 |
| 5518684 | Method of making a molded lead frame A lead frame for use in an integrated circuit package is herein disclosed wherein the lead frame is produced by molding an electrically conductive material into a desired lead frame shape. There is also disclosed several possible arrangements for a lead f... | 05/21/1996 |
| 5463247 | Lead frame material formed of copper alloy for resin sealed type semiconductor devices There is provided a lead frame material formed of a Cu alloy for a resin sealed type semiconductor device, wherein the Cu alloy consists essentially of 2 to 4% Ni, more than 0.5 to 1%, Si, 0.1 to 2% Zn, more than 0.01 to 0.05%, Mg, 0.05 to 1% Sn, and the ... | 10/31/1995 |
