Did You Know...
...that in the early 1940s GE engineer James Wright was charged with a task of utmost importance to the war effort: develop a cheap substitute for rubber that could be used to produce tires, gas masks and a whole host of military gear. Wright tackled the task diligently -- and wound up inventing Silly Putty.
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| Number | Title | Issue Date |
| 7443032 | Memory device with chemical vapor deposition of titanium for titanium silicide contacts A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second prec... | 10/28/2008 |
| 5365405 | Multi-chip module A multi-chip module has a carrier (21) of monocrystalline silicon whose surface is at least partially enlarged by anodic electro-chemical etching in a fluoride-containing acidic electrolyte. At least one capacitor (23) that has a dielectric layer and a co... | 11/15/1994 |
| 4885630 | High power multi-layer semiconductive switching device having multiple parallel contacts with improved forward voltage drop A large area solid state multi-layer semiconductive switching device having multiple parallel contacts accommodates large magnitudes of currents and provides a uniform and a relatively low voltage drop for each of its multiple parallel contacts. This is p... | 12/05/1989 |
| 4680619 | Semiconductor device having silicon conductor tracks connected by a metal silicide track Two (polycrystalline) silicon tracks located at a relative distance of the order of submicrons which contact the subjacent semiconductor body with a pn junction formed therein, are connected to each other via a metal silicide track. The resulting shortcir... | 07/14/1987 |
| 4646126 | Semiconductor device Disclosed is a semiconductor device in which IC chips, tested and evaluated as good, are mounted on a silicon substrate, and interconnection wiring layers and pads for IC chips are provided on the substrate with an insulation film interposed therebetween.... | 02/24/1987 |
| 4476483 | Semiconductor device having a doped amorphous silicon adhesive layer The invention relates to a semiconductor device having a disk-shaped semiconductor body in which on the side of a first major surface at least one circuit element is formed and in which a second major surface present opposite to the first major surface is... | 10/09/1984 |
| 4352120 | Semiconductor device using SiC as supporter of a semiconductor element In a semiconductor device, an active element is mounted on a supporter made of silicon carbide SiC. Since the thermal expansion coefficient of SiC is nearly equal to that of the semiconductor element, the integration of the element and the supporter will ... | 09/28/1982 |
| 4261781 | Process for forming compound semiconductor bodies Compound semiconductor bodies are formed by bonding a layer of supporting material to the two opposite faces of a semiconductor wafer and then cutting the semiconductor wafer into two parts in a plane parallel to said faces. The cut surface of each part i... | 04/14/1981 |
