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...that the first rickshaw was invented in 1869 by an American Baptist minister, the Rev. E. Jonathan Scobie, to transport his invalid wife around the streets of Yokohama?
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| Number | Title | Issue Date |
| 7402910 | Solder, microelectromechanical component and device, and a process for producing a component or device A solder, in particular a thin-film solder, for joining microelectromechanical components, wherein the solder is a eutectic mixture of gold and bismuth. Components and devices joined by a solder of this type are also disclosed, in addition to processes for producing... | 07/22/2008 |
| 7189630 | Layer sequence for producing a composite material for electromechanical components The invention relates to a layer sequence on a substrate made from copper, a copper-based alloy, a copper-plated substrate or a nickel or a nickel-based alloy for production of a composite material, in which a covering layer, consisting of tin or a tin-based alloy, ... | 03/13/2007 |
| 6417564 | Semiconductor element with metal layer The invention relates to a semiconductor element which comprises a metal layer with gold and germanium. A thin covering layer of germanium oxide lies on the metal layer, protecting the subjacent metal layer from undesirable oxidation of the germanium. The... | 07/09/2002 |
| 6268659 | Semiconductor body with layer of solder material comprising chromium A semiconductor body with a layer of solder material and a method for soldering the semiconductor body include a chromium layer applied to a rear side of the semiconductor body, and a tin layer applied to the chromium layer. The semiconductor is subsequen... | 07/31/2001 |
| 6056186 | Method for bonding a ceramic to a metal with a copper-containing shim A method is provided for the bonding of ceramics to metals for the production of semiconductor packages. The method includes forming a copper-copper oxide eutectic on a substantially planar copper shim. The shim and its copper-copper oxide eutectic are pl... | 05/02/2000 |
| 5905938 | Method of manufacturing a semiconductor substrate material A material for a semiconductor substrate is composed substantially of tungsten and/or molybdenum mixed with 5-30 wt. % copper, 0.002-0.07 wt. % phosphorus, and 0.1-0.5 wt. % one or two materials selected from among cobalt, nickel, and iron. The material i... | 05/18/1999 |
| 5777388 | Semiconductor device of the type sealed in glass having a silver-copper bonding layer between slugs and connection conductors The invention relates to a semiconductor device of the type sealed in glass, comprising a semiconductor body having a pn-junction between opposing faces which are connected to slugs of a transition metal, said slugs being connected to copper-containing co... | 07/07/1998 |
| 5760473 | Semiconductor package having a eutectic bonding layer A package for a backside-ground high power transistor comprises a metal base, a flat insulator layer on the base defining a window for receiving the transistor and a pair of flat metal layer bonded to the upper surface of the insulator layer, the flat met... | 06/02/1998 |
| 5731635 | Semiconductor device having a carrier and a multilayer metallization A semiconductor device has a carrier, at least one semiconductor component provided on this carrier, and a multilayer metallization between the semiconductor component and the carrier. A first metal layer of aluminium, gold, or a gold alloy is provided on... | 03/24/1998 |
| 5635764 | Surface treated structure for solder joint On a rear surface of a semiconductor (10), a contact layer (11), a diffusion preventing layer (12) and a solder joint layer (13) are formed, and this solder joint layer (13) is connected to a mount base (15) by a Pb-Sn solder layer (14). The contact layer... | 06/03/1997 |
| 5614291 | Semiconductor device and method of manufacturing the same A semiconductor device, including a nickel layer formed on a semiconductor substrate and a solder layer formed on the nickel layer, and a method of manufacturing such a device are disclosed. The percent ratio of an X-ray diffraction peak intensity of the ... | 03/25/1997 |
| 5439638 | Method of making flowable tungsten/copper composite powder A method of making flowable tungsten/copper composite powder by milling an aqueous slurry of a mixture of the desired weight ratio of tungsten powder and copper oxide powder and, optionally, a small amount of cobalt powder, spray-drying the slurry to form... | 08/08/1995 |
| 5182628 | Semiconductor device having particular solder interconnection arrangement A semiconductor device which is resistant to cracking during a heat cycle is provided which uses a lead-tin alloy solder having a weight ratio in a range of 45/55 to 55/45 to bond an insulation plate and a heat sink plate of the semiconductor device to on... | 01/26/1993 |
| 5134463 | Stress relief layer providing high thermal conduction for a semiconductor device A semiconductor chip (27) is soldered on an electrode plate (24) with a thermal relaxation plate (40) therebetween. The thermal relaxation plate has a frame member (41) made of covar or invar and a plate member (42) made of copper. The plate member is ins... | 07/28/1992 |
| 5106009 | Methods of joining components A method of joining components by soldering comprising forming discrete layers of silver (13, 17) and another metal (19), e.g. a tin or indium based material, the two layers having volumes in a ratio different from that in the eutectic alloy formed by sil... | 04/21/1992 |
| 5068156 | Semiconductor package A semiconductor package in which a ceramic substrate is joined to a copper stud by brazing. Between the substrate and the stud, first and second members are each fixed in place with a brazing material. The first member has a thermal expansion coefficient ... | 11/26/1991 |
| 5031822 | Methods of joining components A method of brazing a silicon component to a molybdenum and/or tungsten component wherein prior to brazing the surface of the molybdenum and/or tungsten component is first provided with a thin gold coating and then a coating of palladium, platinum or rhod... | 07/16/1991 |
| 5008735 | Packaged diode for high temperature operation The invention is a packaged diode suitable for operation at temperatures above 200° C. and during temperature excursions between -65° C. and at least 350° C. The invention comprises a diode having respective p-n portions with a p-n junction therebetwee... | 04/16/1991 |
| 4954870 | Semiconductor device Semiconductor device in which a semiconductor chip is fixed to a lead frame by Sn-Cu alloy solder with a first metal layer interposed between the chip and the solder. The first metal layer is formed at a thickness ranging from 2000 Å to 3 μm, and made o... | 09/04/1990 |
| 4921158 | Brazing material A mechanical and electrical bond between a silicon semiconductor wafer and a molybdenum contact is created by a multi-layer brazing material. The material includes adjacent layers of titanium and silver along with a layer which is either composed of alumi... | 05/01/1990 |
| 4837928 | Method of producing a jumper chip for semiconductor devices In the manufacture of semiconductor device packages, a jumper chip, comprising a substrate and a gold alloy attached thereto, with improved bonding characteristics is provided. By applying a coating of gold on both sides of the gold alloy prior to attachi... | 06/13/1989 |
| 4758874 | Diode and metal stud therefor A diode according to the invention comprises an electrically insulating envelope (2), within which a wafer (1) of semiconductor material with a pn junction is enclosed between metal studs (3,4). The metal studs (3,4) are sinter bodies mainly comprising tu... | 07/19/1988 |
| 4748493 | Diode and metal stud therefor A diode according to the invention comprises an electrically insulating envelope (2), within which a wafer (1) of semiconductor material with a pn junction is enclosed between metal studs (3, 4). The metal studs (3, 4) are sintered bodies mainly comprisin... | 05/31/1988 |
| 4746055 | Method and connecting material for the metallic joining of parts Method for the metallic joining of parts which are formed by semiconductor components with metallization on at least one side or by metallic components or metallic substrates. A composite multilayer material is arranged between the parts to be joined toge... | 05/24/1988 |
| 4745036 | Jumper chip for semiconductor devices In the manufacture of semiconductor device packages, a jumper chip, comprising a substrate and a gold alloy attached thereto, with improved bonding characteristics is provided. By applying a coating of gold on both sides of the gold alloy prior to attachi... | 05/17/1988 |
| 4734755 | Alternating load stable switchable semiconductor device A semiconductor device element, switchable and stable against alternating loads, is provided as an intermediate product which can be stored, can be applied universally, has a semiconductor wafer disposed between two annular insulating bodies and is stabil... | 03/29/1988 |
| 4692788 | Semiconductor device with solder overflow prevention geometry A semiconductor apparatus comprises a semiconductor pellet having upper and lower main surfaces, and upper and lower protector plates against thermal stress soldered to the upper and lower main surfaces, respectively, of the semiconductor pellet wherein t... | 09/08/1987 |
| 4631805 | Semiconductor device including plateless package fabrication method A semiconductor device including a metallurgically compatible unplated package is provided. The package includes a plateless copper alloy die mount area to which a semiconductor die is attached. The semiconductor die is metallized on its mounting surface ... | 12/30/1986 |
| 4620215 | Integrated circuit packaging systems with double surface heat dissipation A mounting arrangement for a semiconductor integrated circuit chip having a first heat sink mounted to the bottom surface of the chip in good heat transfer relation and a second heat sink mounted to a region of the top surface of the chip interior to the ... | 10/28/1986 |
| 4610843 | Low-alloy (Ni-Sn-Ti) copper alloy A low-alloyed copper alloy suitable for use as a base material for a semiconductor includes 0.03 to 0.2% nickel by weight, 0.03 to 0.2% tin by weight; and 0.015 to 0.1% titanium by weight, the remainder being copper and common impurities.... | 09/09/1986 |
| 4591484 | Lead materials for semiconductor devices A lead material for semiconductor devices comprising from 0.4 to 4.0 wt % of Ni, from 0.1 to 1.0 wt % of Si, from 0.05 to 1.0 wt % of Zn, from 0.01 to 1.0 wt % of Mn, from 0.001 to less than 0.01 wt % of Mg, from 0.001 to less than 0.01 wt % of Cr, up to ... | 05/27/1986 |
| 4546374 | Semiconductor device including plateless package A semiconductor device including a metallurgically compatible unplated package is provided. The package includes a plateless copper alloy die mount area to which a semiconductor die is attached. The semiconductor die is metallized on its mounting surface ... | 10/08/1985 |
| 4532539 | Solid-state diode-rectifier and heat sink structure A rectifier for association with an automotive alternator is made by providing a support plate (1) of aluminum on which a post (2) of aluminum is secured, for example by welding (FIG. 1) or by gripping a conical or bulged surface within the thickness of t... | 07/30/1985 |
| 4521801 | Semiconductor device with composite lead wire A semiconductor device, for example a solar battery cell with a semiconductor element and a composite lead wire attached to the semiconductor element in which the lead wire includes a core and a cover overlying the core. The core has a lower thermal expan... | 06/04/1985 |
| 4504849 | Semiconductor devices and a solder for use in such devices A semiconductor device, for example a power rectifier, formed in a semiconductor body has a contact area coated with a metal layer of, for example, gold. A metallic member is soldered to the layer with an alloy comprising at least 80% lead, the balance be... | 03/12/1985 |
| 4503089 | Method for producing semiconductor devices A composite article, and method for producing the same, said article being adapted for use as a semiconductor device. The composite article comprises and is produced by depositing on a first layer of metal having an irregular metal surface a second layer ... | 03/05/1985 |
| 4500904 | Semiconductor device A solder joint between a semiconductor substrate and an electrode is disclosed in which that principal surface of the semiconductor substrate where an n-type semiconductor layer is exposed is bonded to the electrode with brazing solder, and the brazing so... | 02/19/1985 |
| 4480261 | Contact structure for a semiconductor substrate on a mounting body In bonding a semiconductor substrate onto a mounting means, a multiple layer metal electrode is formed on the surface, the multiple layer comprising at least a chromium-nickel alloy layer, nickel layer and a noble metal layer of a noble metal selected fro... | 10/30/1984 |
| 4465742 | Gold-plated electronic components Gold-plated electronic components are disclosed, as well as a process for producing the same, wherein an alloy of nickel and cobalt or an alloy containing these elements as essential ingredients is used as an undercoat for the gold-plated layer.... | 08/14/1984 |
| 4451972 | Method of making electronic chip with metalized back including a surface stratum of solder Electronic chip having a composite stratified metal back and method of making it in which strata of metal and/or metal alloys are deposited on the back of the silicon base or a wafer carrying a plurality of circuit components on its face at least one of t... | 06/05/1984 |
