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| Number | Title | Issue Date |
| 7314781 | Device packages having stable wirebonds A method of making a packaged electrical device comprises the steps of (a) connecting one end of a wire to a first point (e.g., a first electrical node) in the package, and (b) connecting the other end of the wire to a second point (e.g., a second electrical node) i... | 01/01/2008 |
| 7250686 | Semiconductor device, method for designing the same and recording medium that can be read by computer in which program for designing semiconductor device is recorded A semiconductor device of the present invention comprises a first semiconductor chip that includes a first internal circuit and at least one first conductive pad which is provided on its upper surface and is not connected to the first internal circuit, a second semi... | 07/31/2007 |
| 7215031 | Multi chip package A multi chip package includes a substrate; a first semiconductor chip mounted on the substrate; a second semiconductor chip mounted above the first semiconductor chip; a first bonding wire electrically coupled to a first bonding pad on the first semiconductor chip; ... | 05/08/2007 |
| 7214553 | Process for the localized growth of nanotubes and process for fabricating a self-aligned cathode using the nanotube growth process The invention relates to a process for the controlled growth of nanotubes or nanofibers on a substrate, characterized in that it furthermore comprises the production, on the substrate (11), of a bi-layer structure composed of a layer of catalyst material (... | 05/08/2007 |
| 7205673 | Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing A bond pad structure which includes an aluminum bond pad which include one or more dopants that effectively control the growth of IMC to a nominal level in spite of high tensile stresses in the wafer. For example, aluminum can be doped with 1–2 atomic % of Mg. Alt... | 04/17/2007 |
| 7098144 | Iridium oxide nanotubes and method for forming same A method is provided for forming iridium oxide (IrOx) nanotubes. The method comprises: providing a substrate; introducing a (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor; introducing oxygen as a precursor reaction gas; establishing a final pressur... | 08/29/2006 |
| 6700199 | Gold-silver bonding wire for semiconductor device A gold-silver alloy bonding wire for a semiconductor device is provided. The bonding wire contains: a Au-Ag alloy including 5-40% Ag by weight in Au having a purity of 99.999% or greater; at least one element of a first group consisting of Pd, Rh, Pt, and... | 03/02/2004 |
| 6698646 | Room temperature gold wire bonding The present invention is a method for bonding gold wire to gold bond pads at temperatures lower than 125 degrees Celsius, and more particularly at room temperature, defined to be 25 degrees Celsius. By applying compressive force and ultrasonic energy, an ... | 03/02/2004 |
| 6696756 | Gold wire for use in semiconductor packaging and high-frequency signal transmission A gold wire having a non-pure gold core member and a layer of pure gold coating covering the non-pure gold core member. The fabrication method of the gold wire includes the procedures of (1) selecting a non-pure gold wire rod, (2) gold-plating the non-pur... | 02/24/2004 |
| 6674177 | Apparatus for implementing selected functionality on an integrated circuit device A semiconductor device in a computer system is disclosed that includes a die having an active surface bearing integrated circuitry, the die including a plurality of bond pads thereon at least some of which are connected to the integrated circuitry and hav... | 01/06/2004 |
| 6669489 | Interposer, socket and assembly for socketing an electronic component and method of making and using same Surface-mount, solder-down sockets permit electronic components such as semiconductor packages to be releasably mounted to a circuit board or other electronic component. In an embodiment, resilient contact structures extend through a support substrate, an... | 12/30/2003 |
| 6670214 | Insulated bonding wire for microelectronic packaging A method for insulating a bonding wire that includes the steps of attaching a bonding wire to a bond pad and coating the bonding wire with an insulating liquid while drawing the bonding wire through a bond tool from the bond pad to a package lead.... | 12/30/2003 |
| 6655023 | Method and apparatus for burning-in semiconductor devices in wafer form Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connect... | 12/02/2003 |
| 6653170 | Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit A semiconductor chip assembly includes a semiconductor chip attached to a support circuit. The chip includes a conductive pad and the support circuit includes a conductive trace. An elongated wire that electrically connects the pad to the trace is attache... | 11/25/2003 |
| 6635961 | Electronic component of a high frequency current suppression type and bonding wire for the same In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bond... | 10/21/2003 |
| 6635560 | Method for implementing selected functionality on an integrated circuit device A semiconductor device in a computer system is described that includes a die having an active surface bearing integrated circuitry, the die including a plurality of bond pads thereon at least some of which are connected to the integrated circuitry and hav... | 10/21/2003 |
| 6617692 | Apparatus for implementing selected functionality on an integrated circuit device A semiconductor device in a computer system is disclosed that includes a die having an active surface bearing integrated circuitry, the die including a plurality of bond pads thereon connected to the integrated circuitry. At least one electrically conduct... | 09/09/2003 |
| 6538214 | Method for manufacturing raised electrical contact pattern of controlled geometry An interposer includes a substrate having opposing surfaces. Conductive terminals are disposed on both surfaces, and conductive terminals on one surface are electrically connected to conductive terminals on the opposing surface. Elongate, springable, cond... | 03/25/2003 |
| 6515373 | Cu-pad/bonded/Cu-wire with self-passivating Cu-alloys In an integrated circuit structure, the improvement comprising a wire bonded Cu-pad with Cu-wire component, wherein the Cu-pad Cu-wire component is characterized by self-passivation, low resistance, high bond strength, and improved resistance to oxidation... | 02/04/2003 |
| 6492593 | Gold wire for semiconductor element connection and semiconductor element connection method A gold wire, for semiconductor element connection, having 5-100 ppm by weight of Ca, 5-100 ppm by weight of Gd, and 1-100 ppm by weight of Y. The gold wire further preferably has 1-100 ppm by weight of at least one of Eu, La, Ce and Lu, as well as 1-100 p... | 12/10/2002 |
| 6388272 | W/WC/TAC ohmic and rectifying contacts on SiC Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrodes connect to the c... | 05/14/2002 |
| 6342275 | Method and apparatus for atmospheric pressure plasma surface treatment, method of manufacturing semiconductor device, and method of manufacturing ink jet printing head Gas discharge is caused in a predetermined discharging gas at atmospheric pressure or a pressure close to atmospheric pressure, and an organic material which is liquid at room temperature and which is previously contained in the discharging gas or applied... | 01/29/2002 |
| 6322713 | Nanoscale conductive connectors and method for making same In accordance with the invention, nanoscale connectors particularly useful for connecting microscale devices comprise free-standing nanoscale conductors. The nanoscale conductors are conveniently fabricated in sets of controlled, preferably equal length b... | 11/27/2001 |
| 6252175 | Electronic assembly comprising a substrate and a plurality of springable interconnection elements secured to terminals of the substrate An electronic assembly comprising an electronic substrate and a plurality of conductive interconnection elements. The substrate has a first side having a plurality of terminals. Each interconnection element has a base secured to a respective one of the te... | 06/26/2001 |
| 6213382 | Method for making a bump A gold alloy wire in which 0.2 to 5.0% by weight of palladium (Pd) and 1 to 100 ppm by weight of bismuth (Bi) are added to gold having a purity of at least 99.99% by weight. Preferably, at least one element selected from the group consisting of yttrium (Y... | 04/10/2001 |
| 6210637 | Gold alloy thin wire for semiconductor devices The present invention provides a gold alloy thin wire for semiconductor devices, which inhibits corrosion after heating and which improves long term reliability, in portions bonded to the aluminum electrodes. The gold alloy thin wires of the present invention ... | 04/03/2001 |
| 6159420 | Gold alloy wire and method for making a bump A gold alloy wire in which 0.2 to 5.0% by weight of palladium (Pd) and 1 to 100 ppm by weight of bismuth (Bi) are added to gold having a purity of at least 99.99% by weight. Preferably, at least one element selected from the group consisting of yttrium (Y... | 12/12/2000 |
| 6150262 | Silver-gold wire for wire bonding A wire and method of making the wire for use in conjunction with the fabrication of semiconductor devices which consists essentially of forming one of an alloy or composite of from a finite amount approaching zero to about 50 percent by weight of at least... | 11/21/2000 |
| 6150246 | Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC Metallic osmium on SiC (either ଲ or ) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction h... | 11/21/2000 |
| 6140583 | Lead member with multiple conductive layers and specific grain size A lead member for electronic parts which has excellent heat resistance, oxidation resistance and corrosion resistance and is especially excellent in solderability and a process of producing such a lead member at low cost by plating are provided. The lead ... | 10/31/2000 |
| 6103025 | Fine wire of gold alloy, method for manufacture thereof and use thereof Fine wires of a gold alloy of 0.05 to 0.95 wt % platinum, palladium or a mixture thereof; 0.001 to 0.1 wt % mischmetal containing at least 50 wt. % of cerium; and 0 to 0.1 wt % of alkaline earth metal. The wire has a favorable strength-to-elongation ratio... | 08/15/2000 |
| 6080492 | Gold alloy thin wire for semiconductor devices To provide a gold alloy thin wire advantageously applicable to high density packaging of semiconductor devices, in which the wire deformation upon resin molding is reduced to successfully achieve reduction in the bonding pitch and the wire diameter, a gol... | 06/27/2000 |
| 6006427 | Chip-on-board printed circuit manufacturing process using aluminum wire bonded to copper pads In a process for fabricating a printed circuit board assembly carrying a chip on board type microcircuit package, aluminum wires are bonded to the aluminum pads on the microcircuit and to bare copper connector pads on the printed circuit board to form the... | 12/28/1999 |
| 5993735 | Gold-based alloy for bonding wire of semiconductor device The present invention relates to an alloy for bonding wire used to connect a semiconductor chip and a lead frame and, more particularly, to a gold-based alloy for bonding wire of a semiconductor device which is excellent in the strengths at room temperatu... | 11/30/1999 |
| 5989364 | Gold-alloy bonding wire A thin wire of gold alloy for wire bonding, consisting of: a first group consisting of 2 to 10 ppm by weight of scandium, 3 to 20 ppm by weight of beryllium, and 2 to 50 ppm by weight of indium; and the balance consisting of gold and unavoidable impuritie... | 11/23/1999 |
| 5945065 | Method for wedge bonding using a gold alloy wire A gold alloy wire for wedge bonding, comprising 1 to 100 parts per million by weight of calcium (Ca), the remainder being gold and inevitable impurities, said gold alloy wire having a tensile strength of not less than 33.0 kg/mm2 and an elongat... | 08/31/1999 |
| 5932345 | Thermally fusible adhesive copolymer, articles made therefrom, and method for producing the same A novel heat-fusible copolymer possessing a combination of excellent properties, including mechanical strength, resistivity against radioactive rays, chemical resistance, low temperature stability, thermal resistance, processabilty, adhesiveness, thermal ... | 08/03/1999 |
| 5929523 | Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC Metallic osmium on SiC (either ଲ or )forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction ha... | 07/27/1999 |
| 5897049 | Method for wire-bonding a covered wire To assure the continuity of bonding by preventing any buckling of a covered wire or slipping-off of the covered wire from a second clamper, the second clamper is caused to vibrate while a capillary and first clamper are being raised to a ball formation le... | 04/27/1999 |
| 5824568 | Process of making an integrated circuit chip composite A composite containing an integrated circuit chip having conductive site thereon and electrically conductive leads that are interconnected to the conductive site by electrically conductive wire; wherein the wire is coated with a dielectric material. Also,... | 10/20/1998 |
