Class 257/E23.016 - For devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g., silicon on sapphire devices, i.e., SOS (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E23.012. This subclass
No. of patents: 64
Last issue date: 08/05/2008

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Number	Title	Issue Date
7408193	Semiconductor device and manufacturing method thereof A semiconductor device packaged in three dimensions comprises a first thin film device, a second thin film device, and a third thin film device, each of the first, second, and third thin film devices comprising a first insulating film, a first electrode formed over ...	08/05/2008
7323771	Electronic circuit device An electronic circuit device has a high-density mount board (2), on which are disposed a microcomputer (3) and random access memory (7) which are connected to each other through an exclusive memory bus (12) for high-speed data transfer, a...	01/29/2008
7274099	Method of embedding semiconductor chip in support plate A method of embedding a semiconductor chip in a support plate and an embedded structure thereof are proposed. A first dielectric layer having a reinforced filling material is provided, and a semiconductor chip is mounted on the first dielectric layer. A support plat...	09/25/2007
7253504	Integrated circuit package and method An integrated circuit package includes a substrate having a central axis dividing the substrate into an upper half and a lower half and an integrated circuit coupled to the substrate. A layer is provided within the substrate in the lower half thereof that is configu...	08/07/2007
6700135	Active matrix panel An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	03/02/2004
6509591	Thin film transistor with photoconductive material A thin film transistor made with photoconductive material. The thin film transistor comprises a transparent substrate, a gate electrode on the transparent substrate, a dielectric layer on the gate electrode and the transparent substrate, a photoconductive...	01/21/2003
6486497	Liquid crystal device, projection type display device and driving circuit An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	11/26/2002
6452272	Semiconductor device A semiconductor device 1 comprises a body 2 of insulating material having a surface 3 to which a semiconductor element 4 and an interconnect structure 5 are fastened, which interconnect structure 5 is disposed between the semiconductor element 4 and the b...	09/17/2002
6351014	Semiconductor device having different field oxide sizes According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS activ...	02/26/2002
6294834	Structure of combined passive elements and logic circuit on a silicon on insulator wafer A structure of combined passive elements and logic circuits on a SOI (Silicon On Insulator) wafer. By combining passive elements (including a resistor, an inductor and a capacitor) with a logic device on a SOI wafer with dual damascene technology, an extr...	09/25/2001
6255731	SOI bonding structure A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the ...	07/03/2001
6198134	Semiconductor device having a common substrate bias According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS activ...	03/06/2001
5811837	Liquid crystal device with unit cell pitch twice the picture element pitch An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	09/22/1998
5780872	Liquid crystal device, projection type color display device and driving circuit An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	07/14/1998
5754158	Liquid crystal device An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	05/19/1998
5747867	Integrated circuit structure with interconnect formed along walls of silicon island Insulating trenches (2) in the silicon layer of an SOI substrate that extend onto the insulating layer of the SOI substrate define silicon islands (3). At least one of the silicon islands (3) is an interconnect segment (3a) by a diffusion zone that is arr...	05/05/1998
5714771	Projection type color display device, liquid crystal device, active matrix assembly and electric view finder An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	02/03/1998
5705425	Process for manufacturing semiconductor devices separated by an air-bridge A process for manufacturing a semiconductor device comprising: a substrate having an insulating layer and a semiconductor layer lying on the insulating layer, the semiconductor layer having been divided to form a plurality of isolated semiconductor lands ...	01/06/1998
5677212	Method of forming a liquid crystal device An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	10/14/1997
5656826	Liquid crystal device with thick passivation layer over driver region An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	08/12/1997
5652454	Semiconductor device on an SOI substrate According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS activ...	07/29/1997
5648685	Active matrix assembly with lines of equal resistance An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	07/15/1997
5616936	Active matrix assembly with signal line crossing to equalize stray capacitance An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	04/01/1997
5608557	Circuitry with gate line crossing semiconductor line at two or more channels Circuitry formed at a surface of a substrate includes first and second lines in first and second layers of the circuitry. The first line includes semiconductor material and extends between first and second connecting points at which it connects electrical...	03/04/1997
5598012	Thin-film transistor with wide gate electrode and liquid crystal display incorporating same A thin-film transistor for connecting a signal electrode line to a pixel electrode of a liquid crystal display, the thin-film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode...	01/28/1997
5591990	Active matrix assembly An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	01/07/1997
5587597	Semiconductor-on-insulator device interconnects A process for developing conductive interconnect regions between integrated circuit semiconductor devices formed on an insulating substrate utilizes the semiconductor material itself for formation of device interconnect regions. A patterned layer of semic...	12/24/1996
5583347	Liquid crystal device An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	12/10/1996
5557534	Forming array with metal scan lines to control semiconductor gate lines Array circuitry formed at a surface of a substrate includes a first conductive layer with M scan lines, a second conductive layer with N data lines, and cell circuitry for a region in which the mth scan line and the nth data line cross. The cell circuitry...	09/17/1996
5514885	SOI methods and apparatus A charge coupled device is fabricated from a monocrystalline semiconductor-on-insulator (SOI) composite structure....	05/07/1996
5479038	Semiconductor device having a multilevel metallization Upper and lower metallizations are formed on a semiconductor substrate so as to prevent the upper metallization from being inferior wherein the semiconductor substrate includes a plurality of element forming regions, a plurality of isolation insulating re...	12/26/1995
5479052	Contact structure with capacitor for group III-V semiconductor devices A lower electrode, a first inorganic insulating film of SiN, and an organic insulating film of polyimide are formed on a GaAs substrate serving as an underlie, in this order. The organic insulating film is selectively etched to form a capacitor opening. A...	12/26/1995
5449642	Method of forming metal-disilicide layers and contacts A method of forming a metal-disilicide (MSi2) film from a silicon-on-insulator (SOI) substrate having an insulating underlayer and a silicon outerlayer includes the formation of a first capping layer on a portion of the silicon outerlayer. The ...	09/12/1995
5428250	Line material, electronic device using the line material and liquid crystal display The line material is of a laminated structure consisting of: a Ta containing N alloy layer (lower layer) which is a first metal layer made of at least an alloy selected from the group consisting of a TaN alloy, a Ta--Mo--N alloy, a Ta--Nb--N alloy and a T...	06/27/1995
5387817	Dielectric isolation substrate having single-crystal silicon islands surrounded by groove and lower conductive layer filling the groove therewith Upper and lower metallizations are formed on a semiconductor substrate so as to prevent the upper metallization from being inferior wherein the semiconductor substrate includes a plurality of element forming regions, a plurality of isolation insulating re...	02/07/1995
5368880	Eutectic bond and method of gold/titanium eutectic bonding of cadmium telluride to sapphire A method of forming a eutectic bond, of Cadmium Telluride to Sapphire utilizing the Gold/Silicon eutectic bonding of the Cadmium Telluride to the Sapphire. A multi-layer structure of: Chromium which provides adhesion to the Cadmium Telluride; a Titanium l...	11/29/1994
5341012	CMOS device for use in connection with an active matrix panel An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the s...	08/23/1994
5320973	Method of fabricating a thin-film transistor and wiring matrix device A method for easily fabricating a thin-film transistor device which has a high reliability. A thin-film transistor is formed on a substrate, the transistor including a first conducting layer deposited on the substrate, a gate insulating layer formed on th...	06/14/1994
5274279	Thin film CMOS inverter A CMOS device includes a substrate. A thin silicon film is disposed on the substrate and has a P-type thin film transistor and an N-type thin film transistor formed on the thin silicon film. The P-type thin film transistor and the N-type thin film transis...	12/28/1993
5264728	Line material, electronic device using the line material and liquid crystal display The line material is of a laminated structure consisting of: a Ta containing N alloy layer (lower layer) which is a first metal layer made of at least an alloy selected from the group consisting of a TaN alloy, a Ta-Mo-N alloy, a Ta-Nb-N alloy and a Ta-W-...	11/23/1993

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Class 257/E23.016 - For devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g., silicon on sapphire devices, i.e., SOS (EPO)