Class 257/E23.014 - Beam leads (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E23.012. This subclass
No. of patents: 39
Last issue date: 10/07/2008

Number	Title	Issue Date
7432594	Semiconductor chip, electrically connections therefor A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first an...	10/07/2008
7405486	Circuit device In stack packaging, an IC chip in an upper layer and an IC chip in a lower layer are insulated from each other by use of an insulating adhesive and the like. Thus, if an analog IC chip is stacked in the upper layer, a substrate is set in a floating state. Accordingl...	07/29/2008
7227198	Half-bridge package A semiconductor package that includes two power semiconductor dies, such as power MOSFET dies, including vertical conduction MOSFETs, arranged in a half-bridge configuration is disclosed. The package may be mounted on a split conductive pad including two isolated di...	06/05/2007
7224049	Method of fabricating lead frame and method of fabricating semiconductor device using the same, and lead frame and semiconductor device using the same A method of fabricating a lead frame for a semiconductor device having a semiconductor chip resin-sealed therein. The lead frame includes a lead to be electrically connected to the semiconductor chip within sealing resin and to be sealed into the sealing resin such ...	05/29/2007
7161234	Semiconductor component and production method suitable therefor A semiconductor component has a lower semiconductor element and an upper semiconductor element. A contact-making region is provided between the lower and the upper semiconductor element that makes contact with an upper side of the lower semiconductor element and an ...	01/09/2007
7075173	Interposer including adhesive tape Two dice may be provided within a single package so that one pin and associated leadfinger may be coupled to bond pads on different dice. This may mean that two different bond pads on different dice are coupled, for example by wirebonding, to the same leadfinger. An...	07/11/2006
6433413	Three-dimensional multichip module A three-dimensional multichip module having a base structure formed by a plurality of chips secured together in a stack and a plurality of exterior chips mounted to the exterior faces of the base structure. The multichip module may incorporate memory chip...	08/13/2002
6107179	Integrated flexible interconnection A method of creating a plurality of fine pitch integrated interconnects utilizes a flexible layer to create a plurality of integrated interconnects which extend beyond the boundary of the integrated circuit chip onto the substrate. Subsequently, a support...	08/22/2000
5891354	Methods of etching through wafers and substrates with a composite etch stop layer Methods of wet etching through a silicon substrate using composite etch-stop layers are disclosed. In one embodiment, the composite etch stop comprises a layer of silicon dioxide and a layer of polyimide....	04/06/1999
5455187	Method of making a semiconductor device with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device An electrical apparatus having a first substrate, a first metallic layer, a semiconductor device, a second metallic layer, and a metallic interconnecting structure is described. The first substrate is of a semiconductor material and has an upper region an...	10/03/1995
5441898	Fabricating a semiconductor with an insulative coating An electrical apparatus having a top and a bottom is described. A right side portion comprised of a first substrate of semiconductor material is provided. A left side portion of a second substrate of semiconductor material comprising an integrated circuit...	08/15/1995
5280194	Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device An electrical apparatus having a first substrate, a first metallic layer, a semiconductor device, a second metallic layer, and a metallic interconnecting structure is described. The first substrate is of a semiconductor material and has an upper region an...	01/18/1994
5102822	Planar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof A microwave integrated circuit having planar and mesa components and microstrip lines and method of making the same is disclosed. To preserve a constant impedance for the microstrip lines, the mesa component is buried in a recess, which is then filled wit...	04/07/1992
5047834	High strength low stress encapsulation of interconnected semiconductor devices A semiconductor packaging technique employing a high Young's modulus, localized, external connection to pad, bond immobilizing member, together with, as needed, a low Young's modulus environmental protection covering member. A chip of Si or GaAs has an an...	09/10/1991
4982269	Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof A microwave integrated circuit having planar and mesa components and microstrip lines. To preserve a constant impedance for the microstrip lines, the mesa component is buried in a recess, which is then filled with a dielectric having substantially the sam...	01/01/1991
4859629	Method of fabricating a semiconductor beam lead device A semiconductor device and associated method of fabrication in which the device includes a semiconductor substrate having a cavity therein extending in a frame pattern. An insulating layer such as one of silicon nitride is deposited in the cavity followed...	08/22/1989
4855796	Beam lead mixer diode A beam lead diode configuration is described, employing a planar proton bombarded conversion region and a low-permittivity dielectric separator. The diode enjoys the mechanical ruggedness of the conventional planar diodes and the electrical performance of...	08/08/1989
4812895	Hyperfrequency semiconductor device having external connections established by beam-leads A hyperfrequency semiconductor device having external beam-lead connectors is provided with a capacitance connected in series with the inductance produced by said beam-leads, said capacitance being integrated in at least one of the latter and its value be...	03/14/1989
4784972	Method of joining beam leads with projections to device electrodes Disclosed is a method for making beam leads with projections and for joining such beam leads to electrodes of a semiconductor device. On a substrate (10), beam leads (12) with projections (12A) are concurrently formed using a single process. Semiconductor...	11/15/1988
4736235	Ultra-high frequency diode structure whose external connections are provided by two metal beam leads A diode structure having connections utilizing beam leads as disclosed wherein two beam-leads are spaced apart by a diode chip and by a glass stud which is spaced away from the diode chip. Contacts are taken from the diode on its two main faces. One of th...	04/05/1988
4733290	Semiconductor device and method of fabrication A semiconductor device and associated method of fabrication in which the device includes a semiconductor substrate having a cavity therein extending in a frame pattern. An insulating layer such as one of silicon nitride is deposited in the cavity followed...	03/22/1988
4577213	Internally matched Schottky barrier beam lead diode An improved internally matched Schottky barrier beam lead diode for use in millimeter wave frequency circuits. In this diode device which is made on a chip, a reactive shunt loop comprising a matching inductor and series connected capacitor is fabricated ...	03/18/1986
4356374	Electronics circuit device and method of making the same Principal faces of semiconductor devices (19) are bonded by means of a bond layer (17) on one face (lower face) of a heat-resistive flexible synthetic resin film (8, 16), for example, polyimide film, the other face (upper face) of the heat-resistive flexi...	10/26/1982
4346291	Thermally isolated monolithic semiconductor die A process for producing thermally isolated semiconductor die and die produced by the process, plus improved apparatus using the die are disclosed. The process generally comprises the steps of: forming a desired semiconductor component or circuit in a semi...	08/24/1982
4301233	Beam lead Schottky barrier diode for operation at millimeter and submillimeter wave frequencies A beam lead gallium arsenide diode having a rectangular junction perimeter conforming to that the beam lead, recovers ninety-five percent of the junction current and provides an almost perfect ideality factor of 1.07. This device is formed on a semi-insul...	11/17/1981
4257061	Thermally isolated monolithic semiconductor die A process for producing thermally isolated monolithic semiconductor die and die produced by the process, plus improved apparatus using the die are disclosed. The process generally comprises the steps of: forming a desired semiconductor component or circui...	03/17/1981
4246595	Electronics circuit device and method of making the same Principal faces of semiconductor devices (19) are bonded by means of a bond layer (17) on one face (lower face) of a heat-resistive flexible synthetic resin film (8, 16), for example, polyimide film, the other face (upper face) of the heat-resistive flexi...	01/20/1981
4189342	Semiconductor device comprising projecting contact layers A microwave semiconductor device, for example, Gunn effect devices, avalanche diodes and varactors, having a mesa-like semiconductor body which is provided on both sides with respective grown metal contact layers. The upper side of the semiconductor body ...	02/19/1980
4143383	Controllable impedance attenuator having all connection contacts on one side A semiconductor device having two PIN-diodes arranged in series and in opposition, in which the semiconductor body comprises two surface zones of a first conductivity type which extend in a high-ohmic surface layer, said surface layer separating the surfa...	03/06/1979
4112196	Beam lead arrangement for microelectronic devices An improved laminated beam lead for microelectronic devices, e.g., thin film resistors, integrated circuits or the like includes a first metal adhesion layer, e.g. tantalum nitride having disposed thereover a barrier metal such as palladium or platinum, a...	09/05/1978
4110598	Thermal printhead assembly In a method of mounting electronic devices, a gold lead is connected to each contact pad of each wafer in a semiconductor slice. In a parallel step, a body of wafer receiving material is secured to a support and is thereafter separated into wafer receivin...	08/29/1978
4099200	Package for semiconductor beam lead devices A beam lead packaged semiconductor structure having the beam leads of the beam lead semiconductor chip bonded directly to the thinned coplanar tips of lead frame leads which are supported on, and bonded to, an insulating support forming a portion of the p...	07/04/1978
4097890	Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture A beamlead semiconductor component and a method for manufacturing the semiconductor device with low parasitic capacitance and electrical resistance is provided. The beamlead component includes a thick layer of glass forming one end of the component direct...	06/27/1978
4032058	Beam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leads A beam-lead integrated circuit chip structure which comprises a semiconductor chip substrate having a passivated planar surface from which active and passive devices in the circuit extend into the substrate. A plurality of peripheral beam-leads interconne...	06/28/1977
4026759	Method of making ingrown lead frame with strain relief A method for providing a large number of interconnections between a circuitizable wafer and a circuitizable substrate provides very fine line interconnections with built-in strain relief. A channel between the respective substrates is filled with a solven...	05/31/1977
4011144	Methods of forming metallization patterns on beam lead semiconductor devices Methods of forming conductive paths including beam leads on a surface of a semiconductor wafer includes the deposition of conductive films of materials such as titanium and platinum on the surface as a base for a subsequent deposition of a metal, such as ...	03/08/1977
3947952	Method of encapsulating beam lead semiconductor devices Plastic encapsulation in the form of a thin film of silicone resin is provided on the active surface of beam lead semiconductor chips by a multistep process. An etchable organic film, for example, of silicone resin, is applied to the chips while they are ...	04/06/1976
3947304	Etching of group III-V semiconductors Group III-V compound semiconductor devices with attached gold conductor areas are etched using a basic ferricyanide etchant. The etchant is an aqueous solution containing ferricyanide ions in a concentration from 0.8 molar to 1.2 molar and sodium or potas...	03/30/1976
3942187	Semiconductor device with multi-layered metal interconnections Improved metal interconnections for a semiconductor device is described. The interconnections comprise a first metal layer, eg. aluminum, connected to the semiconductor, a second metal layer, eg. gold, for external connection, and a third metal layer inte...	03/02/1976

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Class 257/E23.014 - Beam leads (EPO)