Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 7411263 | Magnetic memory device A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and g... | 08/12/2008 |
| 7405087 | Magnetic memory device and method of manufacturing the same A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between t... | 07/29/2008 |
| 7402879 | Layered magnetic structures having improved surface planarity for bit material deposition The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor,... | 07/22/2008 |
| 7399646 | Magnetic devices and techniques for formation thereof Techniques for forming a magnetic device are provided. In one aspect, a method of forming a via hole self-aligned with a magnetic device comprises the following steps. A dielectric layer is formed over at least a portion of the magnetic device. The dielectric layer ... | 07/15/2008 |
| 7396750 | Method and structure for contacting two adjacent GMR memory bit A method and a structure are provided for improving the contact of two adjacent GMR memory bits. Two adjacent bit ends are connected by utilizing a single via. ... | 07/08/2008 |
| 7397111 | Semiconductor wafer, an electronic component, and a component carrier for producing the electronic component An electronic component includes a semiconductor chip with a chip topside, an integrated circuit, and a chip backside. The chip backside includes a magnetic layer. The electronic component further includes a chip carrier with a magnetic layer on its carrier topside.... | 07/08/2008 |
| 7394123 | Magnetic random access memory array with thin conduction electrical read and write lines An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approxima... | 07/01/2008 |
| 7381616 | Method of making three dimensional, 2R memory having a 4F2 cell size RRAM A method of fabricating a multi-level 3D memory array includes: preparing a wafer and peripheral circuits thereon; layers of metal, memory resistor material, and metal are deposited, patterned and etched. The steps of the method of the invention are repeated for N l... | 06/03/2008 |
| 7383376 | Apparatus and methods for storing data in a magnetic random access memory (MRAM) An apparatus and methods store data in a magnetic random access memory (MRAM) in a fast and efficient manner. Embodiments advantageously decrease the number of clock cycles required to store data by eliminating at least one wait state in a transition from a read sta... | 06/03/2008 |
| 7378698 | Magnetic tunnel junction and memory device including the same A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layer... | 05/27/2008 |
| 7375388 | Device having improved surface planarity prior to MRAM bit material deposition The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor,... | 05/20/2008 |
| 7372090 | Magnetic random access memory device and method of forming the same Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a m... | 05/13/2008 |
| 7372116 | Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell. ... | 05/13/2008 |
| 7372118 | Magnetic random access memory and method of manufacturing the same A magnetic random access memory includes, a lower electrode, a magnetoresistive element which is arranged above the lower electrode and has side surfaces, and a protective film which covers the side surfaces of the magnetoresistive element, has a same planar shape a... | 05/13/2008 |
| 7368299 | MTJ patterning using free layer wet etching and lift off techniques Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices, wherein the second magnetic layer or free layer of a magnetic stack may be patterned using a wet etch technique. A cap layer is formed over the free layer after the free layer is pat... | 05/06/2008 |
| 7358100 | Bottom conductor for integrated MRAM A method to fabricate an MTJ device and its connections to a CMOS integrated circuit is described. The device is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is sele... | 04/15/2008 |
| 7351594 | Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed p... | 04/01/2008 |
| 7345367 | Magnetic memory device and producing method thereof A magnetic memory device exhibits improved writing characteristics by providing a magnetic flux concentrator which efficiently applies the magnetic field, which is generated by the writing word line, to the memory layer of the TMR element. The magnetic memory device... | 03/18/2008 |
| 7341875 | Semiconductor memory device with a capacitor formed therein and a method for forming the same To integrate a capacitor device (40) into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device (43) and an upper electrode device (44) of the capacitor device (40) are pro... | 03/11/2008 |
| 7323349 | Self-aligned cross point resistor memory array A method of fabricating resistor memory array includes preparing a silicon substrate; depositing a bottom electrode, a sacrificial layer, and a hard mask layer on a substrate P+ layer; masking, patterning and etching to remove, in a first direction, a portion of the... | 01/29/2008 |
| 7319262 | MRAM over sloped pillar An apparatus including a pillar located over a substrate and having at least one sloped surface oriented at an acute angle relative to the substrate. The apparatus also includes an MRAM stack substantially conforming to the sloped surface, the MRAM stack thereby als... | 01/15/2008 |
| 7316933 | Method for producing an annular microstructure element An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched... | 01/08/2008 |
| 7315071 | Magnetic RAM A memory element for a magnetic RAM, contained in a recess of an insulating layer, the recess including a portion with slanted sides extending down to the bottom of the recess, the memory element including a first magnetic layer portion substantially conformally cov... | 01/01/2008 |
| 7315053 | Magnetoresistive effect element and magnetic memory device Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magnetoresistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer ... | 01/01/2008 |
| 7309903 | Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device A pin junction element (10) includes a ferromagnetic p-type semiconductor layer (11) and a n-type semiconductor layer (12) which are connected via an insulating layer (13), and which shows a tunneling magnetic resistance according to the ... | 12/18/2007 |
| 7306954 | Process flow for building MRAM structures MRAM structures employ the magnetic properties of layered magnetic and non-magnetic materials to read memory storage logic states. Improvements in switching reliability may be achieved by altering the shape of the layered magnetic stack structure. Forming recessed r... | 12/11/2007 |
| 7276753 | Dynamic random access memory cell and fabricating method thereof A method of fabricating a dynamic random access memory cell is provided. A substrate having a patterned mask layer thereon and a deep trench therein is provided. The patterned mask layer exposes the deep trench. A deep trench capacitor is formed inside the deep tren... | 10/02/2007 |
| 7271010 | Nonvolatile magnetic memory device and manufacturing method thereof An TMR-type MRAM comprising a transistor for selection; a first connecting hole; a first wiring (write-in word line); a second insulating interlayer covering a first insulating interlayer and the first wiring; a TRM device formed on the second insulating interlayer;... | 09/18/2007 |
| 7267999 | MRAM layer having domain wall traps A common pinned layer is shared by multiple memory cells in an MRAM device. The common pinned layer includes a plurality of domain wall traps that prevent the formation of domain walls within a region of the common pinned layer corresponding to a given memory cell. ... | 09/11/2007 |
| 7267997 | Process for forming magnetic memory structures An exemplary method for making a memory structure comprises forming a first ferromagnetic layer, forming a spacer layer above the first ferromagnetic layer, forming a second ferromagnetic layer above the spacer layer by applying a first deposition process to form a ... | 09/11/2007 |
| 7265404 | Bottom conductor for integrated MRAM A structure that is well suited to connecting an MTJ device to a CMOS integrated circuit is described. It is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected... | 09/04/2007 |
| 7262064 | Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer o... | 08/28/2007 |
| 7259040 | Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby A process for manufacturing a phase change memory array, includes the steps of: forming a plurality of PCM cells, arranged in rows and columns; and forming a plurality of resistive bit lines for connecting PCM cells arranged on a same column, each resistive bit line... | 08/21/2007 |
| 7259024 | Method of treating a substrate in manufacturing a magnetoresistive memory cell A method of treating a substrate in manufacturing a magnetoresistive memory cell includes performing a cleaning operation on the substrate using a mask layer as a protection layer for etching of a peripheral via. Further, an etch stop layer can used as a protection ... | 08/21/2007 |
| 7253009 | Method of producing an integrated circuit arrangement with field-shaping electrical conductor An integrated circuit arrangement includes at least one electrical conductor that, when a current flows through it, produces a magnetic field that acts on at least a further part of the circuit arrangement, wherein seen in cross section, the electrical conductor has... | 08/07/2007 |
| 7248045 | Magnetic sensing device, method of forming the same, magnetic sensor, and ammeter The present invention provides a magnetic sensing device capable of stably sensing a signal magnetic field with high sensitivity by suppressing occurrence of a hysteresis to reduce 1/f noise. A magnetic sensing device has a stacked body including a pinned layer havi... | 07/24/2007 |
| 7247506 | Method for producing magnetic memory device There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insul... | 07/24/2007 |
| 7244981 | Scalable high performance non-volatile memory cells using multi-mechanism carrier transport A plurality of select gates are formed over a substrate. In one embodiment, the select gates are formed vertically on the sidewalls of trenches. The substrate includes a plurality of diffusion regions that are each formed between a pair of planar select gates. In a ... | 07/17/2007 |
| 7242047 | Magnetic memory adopting synthetic antiferromagnet as free magnetic layer A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction subst... | 07/10/2007 |
| 7238541 | Method of incorporating magnetic materials in a semiconductor manufacturing process A method for incorporating magnetic materials in a semiconductor manufacturing process includes manufacturing a semiconductor device including interlayers and dielectric layers, depositing a magnetic layer above a semiconductor device and forming metallized contacts... | 07/03/2007 |
