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| Number | Title | Issue Date |
| 7364990 | Epitaxial crystal growth process in the manufacturing of a semiconductor device First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other. While the first and second preliminary epitaxial layers are being grown,... | 04/29/2008 |
| 6559035 | Method for manufacturing an SOI wafer Method for manufacturing an SOI wafer. On a monocrystalline silicon wafer, forming protective regions having the shape of an overturned U, made of an oxidation resistant material, the protective regions covering first wafer portions. Forming deep trenches... | 05/06/2003 |
| 6404034 | CMOS circuit with all-around dielectrically insulated source-drain regions A CMOS circuit has all-around dielectrically insulated source-drain regions. Trenches are formed in the source-drain regions. The trenches are etched onto the mono-crystalline silicon and filled with undoped or very lightly doped silicon. The completely o... | 06/11/2002 |
| 6350659 | Process of making semiconductor device having regions of insulating material formed in a semiconductor substrate A process for fabricating a silicon-on-insulator integrated circuit in conjunction with a process for shallow trench isolation is disclosed. The shallow trench isolation is performed to define active regions in the silicon substrate. The active regions ar... | 02/26/2002 |
| 6124156 | Process for manufacturing a CMOS circuit with all-around dielectrically insulated source-drain regions A CMOS circuit has all-around dielectrically insulated source-drain regions. Trenches are formed in the source-drain regions. The trenches are etched into the mono-crystalline silicon and filled with undoped or very lightly doped silicon. The completely o... | 09/26/2000 |
| 5976959 | Method for forming large area or selective area SOI An inexpensive method for fabricating defect-free, device quality single crystalline silicon layer on an insulator or on a glass substrate has been developed and disclosed herewith. This is accomplished by bonding a single crystalline silicon seed to the ... | 11/02/1999 |
| 5950097 | Advanced isolation scheme for deep submicron technology An oxide layer is thermally grown over a semiconductor body, and openings are etched in the oxide layer to expose portions of the surface of the semiconductor body. Then, epitaxial regions are grown from the semiconductor body into the openings in the oxi... | 09/07/1999 |
| 5948162 | Method for forming SOI structure An epitaxially grown layer having a large area and an uniform thickness is formed on an insulating layer. The surface of a silicon substrate (2) is oxidized to form a silicon dioxide layer (4) acting as insulating layer. The silicon dioxide layer (4) is t... | 09/07/1999 |
| 5926721 | Isolation method for semiconductor device using selective epitaxial growth An isolation method for a highly-integrated semiconductor device includes growing an epitaxial layer on the entire surface of a semiconductor substrate including over a trench on which an oxide layer is formed, thereby leaving the inside of the trench emp... | 07/20/1999 |
| 5897939 | Substrate of the silicon on insulator type for the production of transistors and preparation process for such a substrate Process for the preparation of a substrate of the silicon on insulator type for the production of transistors. The process comprises the following stages: a) shaping the surface of a silicon substrate (10) in order to define a first region (20) and a seco... | 04/27/1999 |
| 5854509 | Method of fabricating semiconductor device and semiconductor device Ordinary anisotropic etching is performed up to a depth (d1) while anisotropic etching is performed to form an inward taper from the depth (d1) by changing etching conditions such as components in a vapor phase and the temperature of a silicon substrate (... | 12/29/1998 |
| 5780343 | Method of producing high quality silicon surface for selective epitaxial growth of silicon A method of producing a high quality silicon surface prior to carrying out a selective epitaxial growth of silicon process for forming an active device region on a substrate. The process flow of the present invention eliminates the need for the sacrificia... | 07/14/1998 |
| 5773351 | Isolation layer of semiconductor device and method for fabricating the same An isolation layer structure of a semiconductor device includes a substrate; a first insulating layer having a predetermined width and thickness which is formed in a predetermined portion of the substrate; and a second insulating layer which is formed in ... | 06/30/1998 |
| 5668043 | Method for forming isolated regions in a semiconductor device The present invention provides a method for forming a field oxide layer without the use of the LOCOS process. Accordingly, the present invention provides a superior effect capable of increasing the active region and improving the integration of semiconduc... | 09/16/1997 |
| 5600161 | Sub-micron diffusion area isolation with Si-SEG for a DRAM array The present invention is a process for forming diffusion areas and field isolation regions on a silicon substrate, by the steps of: growing a field oxide layer on the surface of the substrate; forming a mask pattern which exposes a plurality of spaced-apa... | 02/04/1997 |
| 5559353 | Integrated circuit structure having at least one CMOS-NAND gate and method for the manufacture thereof A first MOS transistor and a second MOS transistor are connected in series with a first complementary MOS transistor and a second complementary MOS transistor that are connected in parallel with one another. The transistors are each realized as a vertical... | 09/24/1996 |
| 5554562 | Advanced isolation scheme for deep submicron technology An oxide layer is thermally grown over a semiconductor body, and openings are etched in the oxide layer to expose portions of the surface of the semiconductor body. Then, epitaxial regions are grown from the semiconductor body into the openings in the oxi... | 09/10/1996 |
| 5548154 | Isoplanar isolated active regions A method is provided for forming isoplanar isolated regions in an integrated circuit, and an integrated circuit formed according to the same. According to a first disclosed embodiment, a first epitaxial layer is formed over a substrate, the substrate havi... | 08/20/1996 |
| 5541136 | Method of forming a field oxide film in a semiconductor device The present invention discloses a method of forming a field oxide film of a semiconductor device which can minimize a bird's beak by etching a predetermined portion of a silicon substrate, forming a field oxide film and forming a single crystal silicon la... | 07/30/1996 |
| 5453396 | Sub-micron diffusion area isolation with SI-SEG for a DRAM array The present invention is a process for forming diffusion areas and field isolation regions on a silicon substrate, by the steps of: growing a field oxide layer on the surface of the substrate; forming a mask pattern which exposes a plurality of spaced-apa... | 09/26/1995 |
| 5417180 | Method for forming SOI structure An epitaxially grown layer having a large area and an uniform thickness is formed on an insulating layer. The surface of a silicon substrate (2) is oxidized to form a silicon dioxide layer (4) acting as insulating layer. The silicon dioxide layer (4) is t... | 05/23/1995 |
| 5384473 | Semiconductor body having element formation surfaces with different orientations A semiconductor body has a first and a second element formation surface. The semiconductor body is constructed in such a manner that a first semiconductor substrate, which has a first main surface at which the plane appears, is laminated to a second semic... | 01/24/1995 |
| 5378644 | Method for manufacturing a semiconductor device A semiconductor device comprising an element separation insulator layer (5, 6, 29) is formed to surround an active region and insulate this active region from other active regions, and to have substantially uniform height throughout its periphery on a mai... | 01/03/1995 |
| 5304834 | Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets In the prior art, selective epitaxial growth (SEG) of semiconductors, performed typically in rectangular windows penetrating through a masking layer located on a major surface of semiconductor substrate, suffers from unwanted facet formation at the corner... | 04/19/1994 |
| 5266517 | Method for forming a sealed interface on a semiconductor device According to the invention, a semiconductor device is provided at the face of a substrate. A layer of insulator is formed adjacent the face of substrate, layer of insulator having a window disposed therethrough. A region of epitaxially semiconductor is di... | 11/30/1993 |
| 5250837 | Method for dielectrically isolating integrated circuits using doped oxide sidewalls A method for dielectrically isolating a semiconductor integrated circuit is provided. Each integrated circuit is substantially surrounded by silicon oxide sidewalls which have been appropriately doped to be of an opposite conductivity type as the surround... | 10/05/1993 |
| 5250461 | Method for dielectrically isolating integrated circuits using doped oxide sidewalls A method for dielectrically isolating a semiconductor integrated circuit is provided. Each integrated circuit is substantially surrounded by silicon oxide sidewalls which have been appropriately doped to be of an opposite conductivity type as the surround... | 10/05/1993 |
| 5236863 | Isolation process for VLSI A process for forming an IC isolation trench pattern wherein the trenches have varying widths and are filled with near intrinsic single crystal silicon. Thus, the wiring that passes over the trenches has low capacitance and active circuit devices having i... | 08/17/1993 |
| 5212112 | Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets In the prior art, selective epitaxial growth (SEG) of semiconductors, performed typically in rectangular windows penetrating through a masking layer located on a major surface of semiconductor substrate, suffers from unwanted facet formation at the corner... | 05/18/1993 |
| 5208167 | Method for producing SOI substrate A method for producing a SOI substrate comprising: a step of forming a first opening to an insulating film on a semiconductor substrate and then forming semiconductor crystal layer by epitaxial growth over the first opening and the insulating film; a step... | 05/04/1993 |
| 5185286 | Process for producing laminated semiconductor substrate A process for producing a laminated semiconductor comprising the steps of: providing a structure comprising a first insulating film on a single crystal semiconductor substrate, the first insulating film having a plurality of openings, and a second insulat... | 02/09/1993 |
| 5135884 | Method of producing isoplanar isolated active regions A method is provided for forming isoplanar isolated regions in an integrated circuit, and an integrated circuit formed according to the same. According to a first disclosed embodiment, a first epitaxial layer is formed over a substrate, the substrate havi... | 08/04/1992 |
| 5134090 | Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy A method of producing patterned epitaxial silicon films and devices fabricated thereby is described. The method forms a first layer of a refractory material on a substrate and pattern delineates the first layer. Silicon is then deposited at a temperature ... | 07/28/1992 |
| 5100830 | Method of manufacturing a semiconductor device In a method for manufacturing a semiconductor device using a LOCOS technique, a selective oxidation is performed using an oxidation-resistance film as a mask to form an element isolating oxide film on the semiconductor substrate. An inserting portion of t... | 03/31/1992 |
| 5084407 | Method for planarizing isolated regions A method is described for planarizing isolated regions (12) and active regions (22) of a semiconductor wafer (10). Semiconductor wafer (10) is provided with islands of dielectric (12) that cover portions of the semiconductor wafer (10), while leaving othe... | 01/28/1992 |
| 5084419 | Method of manufacturing semiconductor device using chemical-mechanical polishing A method of manufacturing a semiconductor device in which a portion of a monocrystalline silicon layer protruded from a surface of an insulating member is polished up to the surface by a chemical-mechanical polishing is disclosed. A polycrystalline silico... | 01/28/1992 |
| 5079183 | C-MOS device and a process for manufacturing the same Element separate regions consisting of insulation material are provided on a semiconductor substrate of a first conductivity type. Element regions which respectively consist of monocrystalline semiconductor layers of the first and second conductivity type... | 01/07/1992 |
| 5073516 | Selective epitaxial growth process flow for semiconductor technologies This is a method of fabricating a high-performance semiconductor device. The method comprises: forming a first insulating structure, preferably a layer of silicon nitride (e.g. region 24 in FIG. 2) on a layer of thermally grown oxide (e.g. region 22), on ... | 12/17/1991 |
| 5057443 | Method for fabricating a trench bipolar transistor A bipolar transistor formed in a trench depression such that a single impurity diffusing step is effective to form a buried collector layer electrically connected to a vertical collector conductor. The lateral diffusion forming the vertical collector cond... | 10/15/1991 |
| 5034342 | Method of forming semiconductor stalk structure by epitaxial growth in trench A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is sel... | 07/23/1991 |
