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| Number | Title | Issue Date |
| 7439159 | Fusion bonding process and structure for fabricating silicon-on-insulator (SOI) semiconductor devices A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the ... | 10/21/2008 |
| 7432204 | Wafer and the manufacturing and reclaiming methods thereof A wafer and the manufacturing and reclaiming methods thereof are disclosed. The wafer includes a semiconductor substrate and a protective layer formed on the surface of the semiconductor substrate. The reclaiming method of the wafer includes providing a wafer having... | 10/07/2008 |
| 7419884 | Method of bonding two wafers of semiconductor materials The invention relates to a method of bonding together two wafers made of materials selected from semiconductor materials by providing two wafers each having a surface that is suitable for molecular bonding; and conducting plasma activation of at least one surface of... | 09/02/2008 |
| 7405466 | Method of fabricating microelectromechanical system structures A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one conductive or semiconductive material component. The order of stackin... | 07/29/2008 |
| 7390724 | Method and system for lattice space engineering A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film ... | 06/24/2008 |
| 7381630 | Method for integrating MEMS device and interposer A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by di... | 06/03/2008 |
| 7381624 | Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate By direct bonding of two crystalline semiconductor layers of different crystallographic orientation and/or material composition and/or internal strain, bulk-like hybrid substrates may be formed, thereby providing the potential for forming semiconductor devices in ac... | 06/03/2008 |
| 7375006 | Peeling method A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, th... | 05/20/2008 |
| 7375005 | Method for reclaiming and reusing wafers Embodiments of the present invention provide a method for reclaiming and reusing a wafer. In one embodiment, a method for reclaiming a wafer comprises providing a used, nonproductive wafer having a semiconductor substrate and a polysilicon layer formed on the semico... | 05/20/2008 |
| 7361519 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a ... | 04/22/2008 |
| 7332411 | Systems and methods for wafer bonding by localized induction heating A system and method bond wafers using localized induction heating. One or more induction micro-heaters are formed with a first substrate to be bonded. A second substrate is positioned in intimate contact with the induction micro-heaters. An alternating magnetic fiel... | 02/19/2008 |
| 7323395 | Manufacture of solid state electronic components The present invention concerns methodologies for the mass production of solid state components, in particular capacitors, although other component types including, but not limited to, diodes and resistors may be produced. According to one aspect of the method of man... | 01/29/2008 |
| 7323396 | Signal and/or ground planes with double buried insulator layers and fabrication process The present invention describes a method including the steps of providing a single crystal semiconductor substrate, forming a layer of rare earth silicide on a surface of the semiconductor substrate, forming a first layer of insulating material on the layer of rare ... | 01/29/2008 |
| 7297612 | Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... | 11/20/2007 |
| 7291538 | Semiconductor memory device and manufacturing method of the same In this semiconductor memory device, a potential clamping region having no insulation layer formed therein is provided in an insulation layer. More specifically, the potential clamping region is formed under a body portion at a position near a first impurity region,... | 11/06/2007 |
| 7273797 | Methods of forming semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 09/25/2007 |
| 7271075 | Method and a device for bonding two plate-shaped objects A method for bonding two plate-shaped objects (5) with an adhesive which is cured by ultraviolet light irradiation and by heating. The two plate-shaped objects (5) with the adhesive in between are transported into a cure chamber (11) comprising ... | 09/18/2007 |
| 7256104 | Substrate manufacturing method and substrate processing apparatus An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which ... | 08/14/2007 |
| 7229892 | Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device, includes preparing a semiconductor substrate, bonding a first semiconductor layer onto a part of the semiconductor substrate with a first insulating layer interposed therebetween, forming a second insulating layer on... | 06/12/2007 |
| 7214582 | Semiconductor substrate and semiconductor circuit formed therein and fabrication methods A semiconductor substrate and a semiconductor circuit formed therein and associated fabrication methods are provided. A multiplicity of depressions with a respective dielectric layer and a capacitor electrode are formed for realizing buried capacitors in a carrier s... | 05/08/2007 |
| 7183178 | Method of manufacturing semiconductor wafer A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof. To prevent the semiconductor wafer from warping even when it is worked as very thin as 100 Î... | 02/27/2007 |
| 7179719 | System and method for hydrogen exfoliation A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer over... | 02/20/2007 |
| 7087980 | Film thickness measuring monitor wafer The object of the present invention is to provide a wafer having a structure of enabling an SiC wafer to be put to practical use as a wafer for monitoring a film thickness. For this purpose, an average surface roughness Ra of at least one surface of the SiC wafer is... | 08/08/2006 |
| 7067393 | Substrate assembly for stressed systems A substrate-assembly having a mechanical stress absorption system. The assembly includes two substrates, one of which has a mechanical stress absorbing system, such as a plurality of motifs that absorb thermoelastic stresses, to prevent cracking or destruction of th... | 06/27/2006 |
| 6703688 | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic p... | 03/09/2004 |
| 6696325 | Method of transferring a thin film device onto a plastic sheet and method of forming a flexible liquid crystal display A method of transferring a thin film device onto a plastic sheet. A silver-containing buffer layer is formed on a glass substrate. A transferred layer including a thin film device is formed on part of the silver-containing buffer layer. At least one first... | 02/24/2004 |
| 6693342 | Thin microelectronic substrates and methods of manufacture A microelectronic substrate and method for manufacture. In one embodiment, the microelectronic substrate includes a body having a first surface, a second surface facing a direction opposite from the first surface, and a plurality of voids in the body betw... | 02/17/2004 |
| 6686257 | Method for transferring epitaxy layer A method for transferring an epitaxy layer is provided. The method includes steps of (a) providing a first substrate, (b) forming a first epitaxy layer on the first substrate, (c) forming a masking layer having at least a pattern on the first epitaxy laye... | 02/03/2004 |
| 6680260 | Method of producing a bonded wafer and the bonded wafer There is provided a method of producing a bonded SOI wafer wherein a silicon single crystal ingot is grown according to Czochralski method, the single crystal ingot is then sliced to produce a silicon single crystal wafer, the silicon single crystal wafer... | 01/20/2004 |
| 6676748 | Method for manufacturing semiconductor substrate An epitaxial layer is formed on a high-resistance semiconductor substrate containing interstitial oxygen at a high concentration, and then a heat treatment is performed to the semiconductor substrate at a high temperature in an oxidizing atmosphere. Accor... | 01/13/2004 |
| 6677192 | Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuits Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic p... | 01/13/2004 |
| 6670257 | Method for forming horizontal buried channels or cavities in wafers of monocrystalline semiconductor material A method of forming buried cavities in a wafer of monocrystalline semiconductor material with at least one cavity formed in a substrate of monocrystalline semiconductor material by timed TMAH etching silicon; covering the cavity with a material inhibiting... | 12/30/2003 |
| 6670259 | Inert atom implantation method for SOI gettering The present invention relates to a method of manufacturing a silicon-on-insulator substrate, comprising the steps of (1) providing a silicon-on-insulator semiconductor wafer having at least one surface of a silicon film; (2) implanting an inert atom into ... | 12/30/2003 |
| 6656271 | Method of manufacturing semiconductor wafer method of using and utilizing the same A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substr... | 12/02/2003 |
| 6656755 | Method for manufacturing semiconductor device by polishing When an SOI substrate composed of a support wafer and an element formation wafer that are bonded together with an insulating film interposed therebetween is polished from a surface of the element formation wafer, a thickness of the element formation wafer... | 12/02/2003 |
| 6653658 | Semiconductor wafers with integrated heat spreading layer The invention is directed to semiconductor wafer structures having increased thermal conductivity over conventional semiconductor wafer designs due to the inclusion of an isotopically-enriched material on at least one surface of the wafer substrate. The i... | 11/25/2003 |
| 6646322 | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic p... | 11/11/2003 |
| 6645830 | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same A method for transferring a thin film device on a substrate onto a transfer member, includes a step for forming a separation layer on the substrate, a step for forming a transferred layer including the thin film device on the separation layer, a step for ... | 11/11/2003 |
| 6638865 | Manufacturing method of semiconductor chip with adhesive agent A semiconductor wafer on which elements have been formed is diced and a rear surface of the semiconductor wafer is ground by a dicing before grinding method to form discrete semiconductor chips. The discrete semiconductor chips are adhered to an adhesive ... | 10/28/2003 |
| 6639327 | Semiconductor member, semiconductor device and manufacturing methods thereof In a bonded semiconductor member, microgaps are formed on a substrate side of a bonding interface to thereby constitute a gettering site, and heavy metal elements contaminated in the substrate are captured by the microgaps. The bonded semiconductor member... | 10/28/2003 |
