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| Number | Title | Issue Date |
| 7410877 | Method for manufacturing SIMOX wafer and SIMOX wafer A method for manufacturing a SIMOX wafer includes: heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer to form a... | 08/12/2008 |
| 7358161 | Methods of forming transistor devices associated with semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 04/15/2008 |
| 7352034 | Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures Methods of forming a semiconductor structure having FinFET's and planar devices, such as MOSFET's, on a common substrate by a damascene approach. A semiconductor fin of the FinFET is formed on a substrate with damascene processing in which the fin growth may be inte... | 04/01/2008 |
| 7344957 | SOI wafer with cooling channels and a method of manufacture thereof A method (100) of forming a silicon-on-insulator (SOI) wafer includes forming one or more channels in a top surface of a first wafer (104), and forming an insulator layer on a second wafer (106). The second wafer is treated (108) to gener... | 03/18/2008 |
| 7329589 | Method for manufacturing silicon-on-insulator wafer A method for manufacturing a SOI wafer includes a step of forming a SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and also includes a step of introducing hydrogen into the interfac... | 02/12/2008 |
| 7314838 | Method for forming a high density dielectric film by chemical vapor deposition A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the processing chamber with a first pressure and adsorbed on the substrate... | 01/01/2008 |
| 7312092 | Methods for fabrication of localized membranes on single crystal substrate surfaces A method is provided for fabricating thin membrane structures in localized surface regions of a single crystal substrate. In the method, ion implantation masks are patterned on the surface of the single crystal substrate with openings that define the localized surfa... | 12/25/2007 |
| 7285480 | Integrated circuit chip with FETs having mixed body thicknesses and method of manufacture thereof An Integrated Circuit (IC) chip that may be a bulk CMOS IC chip with silicon on insulator (SOI) Field Effect Transistors (FETs) and method of making the chip. The IC chip includes areas with pockets of buried insulator strata and FETs formed on the strata are SOI FE... | 10/23/2007 |
| 7279751 | Semiconductor laser device and manufacturing method thereof It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate... | 10/09/2007 |
| 7173309 | SOI single crystalline chip structure with multi-thickness silicon layer A SOI (silicon on insulator) single crystalline chip structure is provided. The SOI chip structure has a first silicon layer for at least one SOI device to be placed thereon, at least one buried oxide area with a predetermined depth placed at a predetermined positio... | 02/06/2007 |
| 7172930 | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semi... | 02/06/2007 |
| 7129138 | Methods of implementing and enhanced silicon-on-insulator (SOI) box structures Enhanced silicon-on-insulator (SOI) buried oxide (BOX) structures and methods are provided for implementing enhanced SOI BOX structures. An oxygen implant step is performed from a backside into a thinned silicon substrate layer. An anneal step forms thick buried oxi... | 10/31/2006 |
| 7122442 | Method and system for dopant containment According to one embodiment, a semiconductor device is provided. The semiconductor device includes an oxide layer. The semiconductor device also includes a silicon layer disposed outwardly from the oxide layer and having at least one region comprising a dopant. The ... | 10/17/2006 |
| 7115463 | Patterning SOI with silicon mask to create box at different depths The present invention provides a method of fabricating a patterned silicon-on-insulator substrate which includes dual depth SOI regions or both SOI and non-SOI regions within the same substrate. The method of the present invention includes forming a silicon mask hav... | 10/03/2006 |
| 7071010 | Methods of making a three terminal magnetic sensor having a collector region electrically isolated from a carrier substrate body In one illustrative example, a three terminal magnetic sensor includes a collector region made of a semiconductor material, a base region, and an emitter region. An insulator layer is formed between the collector region and a carrier substrate body which carries the... | 07/04/2006 |
| 6967376 | Divot reduction in SIMOX layers A method of fabricating a silicon-on-insulator (SOI) having a superficial Si-containing layer that has a reduced number of tile and divot defects is provided. The method includes the steps of: implanting oxygen ions into a surface of a Si-containing substrate, the i... | 11/22/2005 |
| 6676748 | Method for manufacturing semiconductor substrate An epitaxial layer is formed on a high-resistance semiconductor substrate containing interstitial oxygen at a high concentration, and then a heat treatment is performed to the semiconductor substrate at a high temperature in an oxidizing atmosphere. Accor... | 01/13/2004 |
| 6667518 | Method and semiconductor structure for implementing buried dual rail power distribution and integrated decoupling capacitance for silicon on insulator (SOI) devices Methods and semiconductor structures are provided for implementing buried dual rail power distribution and integrated decoupling capacitance for silicon on insulator (SOI) devices. A bulk silicon substrate layer is provided that defines one power distribu... | 12/23/2003 |
| 6653209 | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device To decrease the thickness of a silicon thin film to a desired value without deterioration of the quality thereof while avoiding the surface roughness due to speed increasing oxidation of crystal defect portions occurring when conducting the conventional s... | 11/25/2003 |
| 6635559 | Formation of insulating aluminum oxide in semiconductor substrates The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a vari... | 10/21/2003 |
| 6617034 | SOI substrate and method for production thereof A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on... | 09/09/2003 |
| 6602757 | Self-adjusting thickness uniformity in SOI by high-temperature oxidation of SIMOX and bonded SOI A silicon-on-insulator substrate having improved thickness uniformity as well as a method of fabricating the same is provided. Specifically, improved thickness uniformity of a SOI substrate is obtained in the present invention by subjecting a bonded or SI... | 08/05/2003 |
| 6596593 | Method of manufacturing semiconductor device employing oxygen implantation Disclosed is a semiconductor device having a reduced size, increased accuracy, and flattened element isolation regions with an decreased size. A plurality of MOSFETs having gate oxide films with different thicknesses and element isolation regions are form... | 07/22/2003 |
| 6593173 | Low defect density, thin-layer, SOI substrates Methods of producing buried insulating layers in semiconductor substrates are disclosed whereby a dose of selected ions is implanted into a substrate to form a buried precursor layer below an upper layer of the substrate, followed by oxidation of the subs... | 07/15/2003 |
| 6593627 | SOI semiconductor wafer having different thickness active layers and semiconductor device formed therein A semiconductor wafer has a first element forming section, a second element forming section adjoining the first element forming section, and a third element forming section adjoining the second element forming section. The first element forming section ha... | 07/15/2003 |
| 6593205 | Patterned SOI by formation and annihilation of buried oxide regions during processing A method of fabricating a silicon-on-insulator (SOI) substrate including at least one patterned buried oxide region having well defined edges is provided. The method includes a step of implanting first ions into a surface of a Si-containing substrate so a... | 07/15/2003 |
| 6558990 | SOI substrate, method of manufacture thereof, and semiconductor device using SOI substrate A manufacturing method of a SOI substrate (10) comprises the steps of: forming an oxide film (12) at cross-sectional both main surfaces and cross-sectional both end surfaces of a silicon substrate (11); forming a resist layer (13) on the oxide film (12) a... | 05/06/2003 |
| 6548379 | SOI substrate and method for manufacturing the same A SOI substrate includes a SiO2 film (230) having a center located at the depth of the damage peak where the crystal damage is maximum after the Si substrate (10) is ion-implanted with oxygen ions. Even if a crystal defect (240) remains at the ... | 04/15/2003 |
| 6548369 | Multi-thickness silicon films on a single semiconductor-on-insulator (SOI) chip using simox A semiconductor-on-insulator (SOI) chip. The SOI chip having a substrate; a buried oxide (BOX) layer disposed on the substrate; and an active layer disposed on the BOX layer, the active layer divided into a first tile and a second tile, the first tile hav... | 04/15/2003 |
| 6541356 | Ultimate SIMOX A method of forming a silicon-on-insulator (SOI) substrate having a buried oxide region that has a greater content of thermally grown oxide as compared to oxide formed by implanted oxygen ions is provided. Specifically, the inventive SOI substrate is form... | 04/01/2003 |
| 6515335 | Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same A method of fabricating relaxed SiGe buffer layers with low threading dislocation densities on silicon-on-insulator (SOI) substrates is provided. The relaxed SiGe buffer layers are fabricated by the epitaxial deposition of a defect-free Stranski-Krastanov... | 02/04/2003 |
| 6506662 | Method for forming an SOI substrate by use of a plasma ion irradiation A method for forming a silicon on insulator substrate includes the step of dissociating a plasma of molecules including at least any one of oxygen and nitrogen to obtain ions. The ions are accelerated by passage through gaps between acceleration electrode... | 01/14/2003 |
| 6495429 | Controlling internal thermal oxidation and eliminating deep divots in SIMOX by chlorine-based annealing A method to control the quality of a buried oxide region, and to substantially reduce or eliminate deep divots in SOI substrates is provided. Specifically, the inventive method includes the steps of implanting oxygen ions into a surface of a Si-containing... | 12/17/2002 |
| 6492244 | Method and semiconductor structure for implementing buried dual rail power distribution and integrated decoupling capacitance for silicon on insulator (SOI) devices Methods and semiconductor structures are provided for implementing buried dual rail power distribution and integrated decoupling capacitance for silicon on insulator (SOI) devices. A bulk silicon substrate layer is provided that defines one power distribu... | 12/10/2002 |
| 6486037 | Control of buried oxide quality in low dose SIMOX A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing an oxygen ion implantation step to create a stable defect region; a low energy implantation step to create an amorphous layer adjacent to the stabl... | 11/26/2002 |
| 6461933 | SPIMOX/SIMOX combination with ITOX option Beam implantation is combined with plasma implantation of oxygen, and possibly also internal thermal oxidation, to form a high quality buried oxide layer.... | 10/08/2002 |
| 6417078 | Implantation process using sub-stoichiometric, oxygen doses at different energies The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential... | 07/09/2002 |
| 6350703 | Semiconductor substrate and production method thereof A method of producing an SOI substrate is disclosed which comprises a step of preparing an Si substrate prepared by the floating zone process (FZ process), a step of implanting oxygen ions from the principal surface side of the Si substrate thereinto to f... | 02/26/2002 |
| 6333532 | Patterned SOI regions in semiconductor chips A method and structure for forming patterned SOI regions and bulk regions is described wherein a silicon containing layer over an insulator may have a plurality of selected thickness' and wherein bulk regions may be suitable to form DRAM's and SOI regions... | 12/25/2001 |
| 6323110 | Structure and fabrication process of silicon on insulator wafer The present invention discloses a wafer which includes a semiconductor substrate having a top surface and a device layer disposed near the top surface for fabrication of integrated circuits (ICs) therein. The wafer also includes an insulating layer beneat... | 11/27/2001 |
