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| Number | Title | Issue Date |
| 7442585 | MOSFET with laterally graded channel region and method for manufacturing same The present invention relates generally to a semiconductor device having a channel region comprising a semiconductor alloy of a first semiconductor material and a second, different material, and wherein atomic distribution of the second material in the channel regio... | 10/28/2008 |
| 7439167 | Nonvolatile semiconductor memory and manufacturing method thereof A nonvolatile semiconductor memory includes a trench isolation provided in a semiconductor substrate and an interlayer insulator provided on the semiconductor substrate. The trench isolation defines an active area extending in a first direction at the semiconductor ... | 10/21/2008 |
| 7439191 | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-... | 10/21/2008 |
| 7435634 | Methods of forming semiconductor devices having stacked transistors A method of forming a semiconductor device may include forming an interlayer insulating layer on a semiconductor substrate, and the interlayer insulating layer may have a contact hole therein exposing a portion of the semiconductor substrate. A single crystal semico... | 10/14/2008 |
| 7432138 | Thin film transistor substrate and manufacturing method for the same A thin film transistor substrate is provided whose structure allows for the formation of (i) a thick gate insulating film, (ii) a high pressure resistance TFT having a LDD region of a GOLD structure, and (iii) a low voltage TFT having a thin gate insulating film, wi... | 10/07/2008 |
| 7422950 | Strained silicon MOS device with box layer between the source and drain regions A MOS device comprises a gate stack comprising a gate electrode disposed on a gate dielectric, a first spacer and a second spacer formed on laterally opposite sides of the gate stack, a source region proximate to the first spacer, a drain region proximate to the sec... | 09/09/2008 |
| 7419857 | Method for manufacturing field effect transistor having channel consisting of silicon fins and silicon body and transistor structure manufactured thereby Discloses are a method for manufacturing a field effect transistor comprising a channel consisting of silicon fins and a silicon body, in which the silicon fins have an orientation different from the silicon body, as well as a transistor structure manufactured there... | 09/02/2008 |
| 7416965 | Method for producing a strained layer on a substrate and corresponding layer structure The invention relates to a method for producing a layer structure comprising a strained layer on a substrate. The inventive method comprises the steps of producing a defect area in a layer adjoining the layer to be strained, and relaxing at least one layer adjoining... | 08/26/2008 |
| 7410843 | Methods for fabricating reduced floating body effect static random access memory cells An SRAM cell that may reduce or eliminate floating body effect when using a SOI and a method for fabricating the same are provided. A floating body of an access transistor of the SRAM is connected to a source region of a driver transistor, for example, through a bod... | 08/12/2008 |
| 7410859 | Stressed MOS device and method for its fabrication A stressed MOS device and a method for its fabrication are provided. The MOS device comprises a substrate having a surface, the substrate comprising a monocrystalline semiconductor material having a first lattice constant. A channel region is formed of the monocryst... | 08/12/2008 |
| 7410848 | Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure... | 08/12/2008 |
| 7402467 | Method of manufacturing a semiconductor device A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT... | 07/22/2008 |
| 7393708 | Method of manufacturing light emitting device The present invention provides a manufacturing method of a light emitting device in which the number of display panels manufactured from one substrate is increased and display panel is mass produced is provided. One feature of the invention is that the shipping is p... | 07/01/2008 |
| 7393732 | Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures A SOI MOSFET structure having a reduced step height between the various semiconductor layers without adversely affecting the junction capacitance of the semiconductor device formed on the uppermost semiconductor layer as well as a method of fabricating the same are ... | 07/01/2008 |
| 7393734 | Method of fabricating polysilicon film Method of fabricating polysilicon film includes forming insulating layer, first amorphous silicon layer, and cap layer over a substrate. An annealing is performed to transform the first amorphous silicon layer into first polysilicon layer with at least a hole. The c... | 07/01/2008 |
| 7393730 | Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) providing a substrate; and (2) forming a first silicon-on-insulator (SOI) region having a first crystal orientation, a second SOI region ... | 07/01/2008 |
| 7390704 | Laser process apparatus, laser irradiation method, and method for manufacturing semiconductor device To mass-produce semiconductor devices with high reliability in short time by suppressing the generation of vibration at the laser irradiation and moving a laser beam having homogeneous energy profile in one direction. A substrate is sucked onto a surface of a... | 06/24/2008 |
| 7390706 | Method of forming channel region of TFT composed of single crystal Si A method of forming a high quality channel region of a TFT by forming a large size monocrystalline silicon thin film using a patterned metal mask and a grain boundary filtering region is provided. The method includes sequentially stacking a first buffer layer and an... | 06/24/2008 |
| 7384832 | Method of manufacturing a semiconductor device By using lasers having different wavelengths in laser annealing of an amorphous semiconductor film, the amorphous semiconductor film can be crystallized and the crystallinity of the crystallized film is improved. A laser 126 to 370 nm in wavelength is used first to ... | 06/10/2008 |
| 7384831 | Thin film transistor and manufacturing method thereof A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate-insulting layer, a semiconductor layer, a second CuSix layer, an... | 06/10/2008 |
| 7384828 | Semiconductor film, semiconductor device and method of their production A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The s... | 06/10/2008 |
| 7381596 | Method of manufacturing an AMOLED The present invention relating to a method of manufacturing an AMOLED panel. The method comprises providing a substrate, forming a TFT on the substrate, forming an inter-layer insulator layer, forming a plurality of via holes, forming a metal layer which electricall... | 06/03/2008 |
| 7381598 | Insulated gate semiconductor device and process for fabricating the same A thin film transistor of reversed stagger type having improved characteristics and yet obtained by a simple process, which is fabricated by selectively doping the semiconductor region on the gate dielectric to form the source, drain, and channel forming regions by ... | 06/03/2008 |
| 7364954 | Method for manufacturing semiconductor device The present invention provides a manufacturing method of a semiconductor device at low cost and with high reliability. According to one feature of a method for manufacturing a semiconductor device includes the steps of forming a metal film over a substrate; forming ... | 04/29/2008 |
| 7364955 | Methods of manufacturing semiconductor devices having single crystalline silicon layers Methods of manufacturing semiconductor devices having at least one single crystal silicon layer are provided. Pursuant to these methods, a first seed layer that includes silicon is formed. A first non-single crystalline silicon layer is then formed on the first seed... | 04/29/2008 |
| 7358161 | Methods of forming transistor devices associated with semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 04/15/2008 |
| 7351616 | Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device A semiconductor substrate comprising: a semiconductor base; dielectric layers of mutually different film thicknesses formed on the semiconductor base; and semiconductor layers of mutually different film thicknesses formed on the dielectric layers. ... | 04/01/2008 |
| 7352034 | Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures Methods of forming a semiconductor structure having FinFET's and planar devices, such as MOSFET's, on a common substrate by a damascene approach. A semiconductor fin of the FinFET is formed on a substrate with damascene processing in which the fin growth may be inte... | 04/01/2008 |
| 7351624 | MIS semiconductor device and method of fabricating the same The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor sub... | 04/01/2008 |
| 7341898 | Thin film transistor circuit device, production method thereof and liquid crystal display using the thin film transistor circuit device A thin film transistor circuit device and the production method thereof is demanded for a thin film transistor circuit device, which contains wiring having a structure of an aluminum alloy in a lower layer and a molybdenum alloy in an upper layer, wherein corrosion ... | 03/11/2008 |
| 7341897 | Method of fabricating thin film transistor A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconduct... | 03/11/2008 |
| 7332384 | Technique for forming a substrate having crystalline semiconductor regions of different characteristics Different types of crystalline semiconductor regions are provided on a single substrate by forming a dielectric region within a first crystalline semiconductor region. Thereafter, a second crystalline region is positioned above the dielectric region by wafer bond te... | 02/19/2008 |
| 7329923 | High-performance CMOS devices on hybrid crystal oriented substrates An integrated semiconductor structure containing at least one device formed upon a first crystallographic surface that is optimal for that device, while another device is formed upon a second different crystallographic surface that is optimal for the other device is... | 02/12/2008 |
| 7326604 | Semiconductor device and method of manufacturing the same In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses t... | 02/05/2008 |
| 7326601 | Methods for fabrication of a stressed MOS device Methods for fabricating a stressed MOS device is provided. One method comprises the steps of providing a monocrystalline semiconductor substrate having a surface and a channel abutting the surface. A gate electrode having a first edge and a second edge is formed ove... | 02/05/2008 |
| 7320925 | SOI substrate, semiconductor substrate, and method for production thereof A method is for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of a buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region. A method for the production of a... | 01/22/2008 |
| 7319056 | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer lase... | 01/15/2008 |
| 7316946 | Method of manufacturing a semiconductor device Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation process... | 01/08/2008 |
| 7316947 | Method of manufacturing a semiconductor device An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of ... | 01/08/2008 |
| 7316948 | Semiconductor device and method of manufacturing the same To obtain a semiconductor device and a method of manufacturing the same which can reduce influence of fluctuation in characteristic among transistors due to fluctuation in laser light irradiation number and laser light intensity on a semiconductor. There is provided... | 01/08/2008 |
