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Class 257/E21.53 - For structural parameters, e.g., thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.529. This subclass
No. of patents: 555
Last issue date: 09/23/2008


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NumberTitleIssue Date
7427518Semiconductor device fabrication method and fabrication apparatus
According to the present invention, there is provided a semiconductor device fabrication method comprising: measuring light emission intensity of at least one type of wavelength contained in light emitted from a plasma, when one of...
09/23/2008
7427764Laser crystallization apparatus and laser crystallization method
A laser crystallization apparatus which capable of correcting both shift in imaging position caused by thermal lens effect of the imaging optical system and shift due to flatness of the substrate comprises an crystallization optical system which irradiates laser lig...
09/23/2008
7410815Apparatus and method for non-contact assessment of a constituent in semiconductor substrates
Methods and apparatus for assessing a constituent in a semiconductor substrate. Several embodiments of the invention are directed toward non-contact methods and systems for identifying an atom specie of a dopant implanted into the semiconductor substrate using techn...
08/12/2008
7407821Substrate processing method
There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product...
08/05/2008
7405091Method for testing contact open in semicoductor device
The present invention is a method for testing a contact open capable of effectively testing a contact open defect in an In-line as securing a mass productivity. The method includes the steps of: performing a photolithography process for forming a contact; forming a ...
07/29/2008
7381576Method and apparatus for monitoring precision of water placement alignment
A method for monitoring precision of placement of semiconductor wafers in a semiconductor processing apparatus includes measuring thickness of an insulating film on a surface of a semiconductor substrate before etching a portion of the insulating film from the surfa...
06/03/2008
7364930Method for producing micromechanical and micro-optic components consisting of glass-type materials
What is proposed here is a method of structuring surfaces of glass-type materials and variants of this method, comprising the following steps of operation: providing a semiconductor substrate, structuring, with the formation of recesses, of at least one surface of t...
04/29/2008
7358582Planar optical waveguide assembly
A planar optical waveguide assembly prepared by a method comprising the steps of (i) applying a curable polymer composition to a surface of a substrate to form a polymer film; (ii) curing the polymer film to form a lower clad layer; (iii) applying a silicone composi...
04/15/2008
7335969Method of monitoring introduction of interfacial species
A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first di...
02/26/2008
7329900Bonding strength testing device
A bonding strength test device suits to perform a bonding strength test for at least one solder ball that fixed on a substrate. The bonding strength test device includes a fixed base and an impact apparatus. The impact apparatus has a first end and a second end corr...
02/12/2008
7326581System, method and apparatus for automatic control of an RF generator for maximum efficiency
A method of dynamically adjusting a RF generator to an instantaneous resonant frequency of a transducer includes providing an RF input signal from an oscillator to the RF generator and measuring a supply voltage applied to the RF generator. A peak voltage in the RF ...
02/05/2008
7317254Semiconductor device mounting structure for reducing thermal stress and warpage
A semiconductor device is composed of a circuit board, a semiconductor chip connected with the circuit board by a plurality of bumps. The semiconductor chip includes a center portion and a peripheral portion surrounding the center portion. The peripheral portion has...
01/08/2008
7314767Method for local wafer thinning and reinforcement
A method is provided for preparing a semiconductor wafer for testing. The method includes selecting a die to be tested; measuring a diagonal of the die; thinning an area over the die extending beyond the scribe lines, the thinned area may be a circular area having a...
01/01/2008
7314766Semiconductor wafer treatment method, semiconductor wafer inspection method, semiconductor device development method and semiconductor wafer treatment apparatus
A treatment method of a semiconductor wafer includes treating the semiconductor wafer in a first solution having at least one kind of an oxidative acid and an oxidizing agent and treating the semiconductor wafer in a second solution having at least one of HF and NH
01/01/2008
7271012Failure analysis methods and systems
A method and system for exposing the delicate structures of a device encapsulated in a mold compound such as an integrated circuit (IC). A laser is used to ablate the mold compound and thus remove it, exposing the underlying structure. The laser beam can be steered ...
09/18/2007
7256058Device and method for package warp compensation in an integrated heat spreader
A device and method for designing and manufacturing an integrated heat spreader so that the integrated heat spreader will have a flat surface on which to mount a heat sink after being assembled into a package and exposed to the heat of a die. This device and method ...
08/14/2007
7241697Method for sensor edge control and track width definition for narrow track width devices
A process for defining and controlling the track width for sensor devices is disclosed. An RIE-resistant, image layer, such as Cu or NiFe, is deposited after the DLC layer. A combination of RIE and ion milling processes or reactive ion beam etching processes are use...
07/10/2007
7241698Method for sensor edge and mask height control for narrow track width devices
A process for defining and controlling the mask height of sensor devices is disclosed. An RIE-resistant, image layer, such as Cu or NiFe, is deposited after the DLC layer. A combination of RIE and ion milling processes or reactive ion beam etching processes are used...
07/10/2007
7232695Method and apparatus for completely covering a wafer with a passivating material
A method and apparatus for determining the complete coverage of a passivating material on the final conductive interconnection of a wafer containing integrated circuits. A test structure with the dimensions of the final interconnections of the integrated circuits is...
06/19/2007
7232769Method of forming amorphous silica-based coating film with low dielectric constant and thus obtained silica-based coating film
The present invention relates to an amorphous silica-based coating film with a low specific dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of forming the same. A liquid compos...
06/19/2007
7232716Display device and method for manufacturing the same
The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum va...
06/19/2007
7226806Wet etched insulator and electronic circuit component
The present invention relates to an insulator as an insulating layer in a laminate which can inhibit dusting at the time of use, more particularly an electronic circuit component to which the insulator has been applied, particularly a wireless suspension. The insula...
06/05/2007
7220604Method and apparatus for repairing shape, and method for manufacturing semiconductor device using those
The invention relates to a method for enabling repair of a defect in a substrate, particularly the invention provides a method and apparatus for enabling repair of a pattern shape in a semiconductor device, which has not been able to be practiced because of lack of ...
05/22/2007
7189584Fabrication alignment technique for light guide screen
Provided is a fabrication alignment technique for a light guide screen. A plurality of light guide layers are provided. Each light guide layer includes a plurality of aligned light guides, each light guide having an input end, a midsection and an output end. The lig...
03/13/2007
7186577Method for monitoring a density profile of impurities
A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thi...
03/06/2007
7179665Optical method for determining the doping depth profile in silicon
A method of processing a sample, comprising the steps of: introducing dopant into a sample thereby producing a doped sample; producing a healed sampled including a doping density profile in response to introducing the dopant into the sample; and measuring the doping...
02/20/2007
7176042Laser beam irradiation method that includes determining a thickness of semiconductor prior to crystallizing
A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is fo...
02/13/2007
7176039Dynamic modification of gap fill process characteristics
A method for process optimization to extend the utility of the HDP CVD gap fill technique modifies the characteristics of the HDP process (deposition and sputter components) in a dynamic mode in the course of filling a trench with dielectric material. As a result, t...
02/13/2007
7169717Method of producing a calibration wafer
A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predet...
01/30/2007
7169716Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask
A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which s...
01/30/2007
7157331Ultraviolet blocking layer
Methods and apparatuses are disclosed relating to blocking ultraviolet electromagnetic radiation from a semiconductor. Ultraviolet electromagnetic radiation, such as ultraviolet electromagnetic radiation generated by a plasma process, which may otherwise damage a se...
01/02/2007
7153711Method for improving a drive current for semiconductor devices on a wafer-by-wafer basis
The present invention provides a method for manufacturing semiconductor devices, a method for manufacturing an integrated circuit, and a method for improving a drive current for semiconductor devices on a wafer-by-wafer basis. The method for manufacturing semiconduc...
12/26/2006
7139083Methods and systems for determining a composition and a thickness of a specimen
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. ...
11/21/2006
7126232Defect repair apparatus for an electronic device
A method is described for repairing failure points, regions or locations in an electronic device to have a perfect function when a semiconductor device including an LCD of other electronic device has defects. Described is a method of transferring a single or multi-l...
10/24/2006
7122387Deposition stop time detection apparatus and methods for fabricating copper wiring using the same
A method for fabricating copper wiring of a semiconductor device comprises forming a deposition stop time detection pattern having two trench structures positioned with a predetermined distance from each other on a dielectric substrate; positioning a deposition stop...
10/17/2006
7087980Film thickness measuring monitor wafer
The object of the present invention is to provide a wafer having a structure of enabling an SiC wafer to be put to practical use as a wafer for monitoring a film thickness. For this purpose, an average surface roughness Ra of at least one surface of the SiC wafer is...
08/08/2006
6813376System and method for detecting defects on a structure-bearing surface using optical inspection
A method of collating and using captured semiconductor-wafer image data in an automated defect analysis. The method includes the steps of receiving image data and, if necessary, converting it to a digital format. Once the data is in pixel-by-pixel form, each pixel i...
11/02/2004
6809332Electronic device and defect repair method thereof
A method is described for repairing failure points, regions or locations in an electronic device to have a perfect function when a semiconductor device including an LCD or other electronic device has defects. Described is a method of transferring a single or multi-l...
10/26/2004
6770494Process of compensating for layer thickness by determining device parameters on different surface areas of a substrate
Chemical mechanical polishing (CMP) produces thickness variations over the surface of a chip or die that depends on many factors. The present invention provides for characterization of the thickness variations over the surface area, and accepting these variations in...
08/03/2004
6699436Apparatus for measuring contaminant mobile ions in dielectric materials
Methods and apparatus are provided for measuring contaminant mobile ions in a dielectric portion of a semiconductor. The apparatus is comprised of a heat source configured to elevate a temperature of the dielectric portion of the semiconductor and mobiliz...
03/02/2004
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