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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Number | Title | Issue Date |
| 7405091 | Method for testing contact open in semicoductor device The present invention is a method for testing a contact open capable of effectively testing a contact open defect in an In-line as securing a mass productivity. The method includes the steps of: performing a photolithography process for forming a contact; forming a ... | 07/29/2008 |
| 7364993 | Method of enhancing the photoconductive properties of a semiconductor A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less ... | 04/29/2008 |
| 7358187 | Coating process for patterned substrate surfaces The present invention provides a coating process for patterned substrate surfaces, in which a substrate (101) is provided, the substrate having a surface (105) which is patterned in a substrate patterning region (102) and has one or more trenche... | 04/15/2008 |
| 7169625 | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal... | 01/30/2007 |
| 7166480 | Particle control device and particle control method for vacuum processing apparatus A particle control device and a particle control method are capable of controlling the occurrences of particles in a vacuum reactor. The particle control device is used in a vacuum processing apparatus having a vacuum reactor, a gas delivery unit for supplying proce... | 01/23/2007 |
| 7115214 | Method of forming barrier layer First, a substrate having at least a conducting layer is provided. Then, a CVD process is performed to form the Ti/TiN barrier layer onto the conducting layer. An examination procedure is followed, and if particles are detected in the Ti/TiN barrier layer, then a re... | 10/03/2006 |
| 6702647 | Method and apparatus for wireless transfer of chemical-mechanical planarization measurements A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portio... | 03/09/2004 |
| 6689662 | Method of forming a high voltage power MOSFET having low on-resistance A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift re... | 02/10/2004 |
| 6673636 | Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers An apparatus, system and method for the real-time monitoring of plasma charging during plasma processing are provided which overcome the deficiencies in currently available apparatus, systems and methods. According to one embodiment, the method and appara... | 01/06/2004 |
| 6670200 | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process e... | 12/30/2003 |
| 6669810 | Method for detecting etching endpoint, and etching apparatus and etching system using the method thereof A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the pl... | 12/30/2003 |
| 6667196 | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer ... | 12/23/2003 |
| 6660571 | High voltage power MOSFET having low on-resistance A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift re... | 12/09/2003 |
| 6653732 | Electronic component having a semiconductor chip An electronic component includes a semiconductor chip and/or a test structure. The semiconductor chip includes a multi-layer coating having at least one interconnect layer, at least one insulation layer, and at least one planarization layer. A method of p... | 11/25/2003 |
| 6652710 | Process monitoring apparatus and method An apparatus capable of processing a wafer, comprises a chamber adapted to process the wafer, whereby one or more parameters of the process being conducted in the chamber may change during processing of the wafer; and a signal analyzer adapted to receive ... | 11/25/2003 |
| 6649426 | System and method for active control of spacer deposition The present invention relates to systems and methods to regulate spacer deposition. The present invention employs a spacer deposition controller to control a spacer deposition component that deposits a spacer on a portion of a wafer. During and/or after s... | 11/18/2003 |
| 6645780 | Method and apparatus for combining integrated and offline metrology for process control A method and an apparatus for combining integrated and offline metrology data for process control. A process operation on a first semiconductor wafer within a first lot of semiconductor wafers is performed. Integrated metrology data from the first semicon... | 11/11/2003 |
| 6643557 | Method and apparatus for using scatterometry to perform feedback and feed-forward control The present invention provides for a method and an apparatus for using scatterometry to perform feedback and feed-forward control. A processing run of semiconductor devices is performed. Metrology data from the processed semiconductor devices is acquired.... | 11/04/2003 |
| 6643559 | Method for monitoring a semiconductor fabrication process for processing a substrate The invention relates to a method for monitoring a production process, whereby several models are used for detecting a finish point. The results of the model are subsequently compared with one another and the best model therefrom is used in other producti... | 11/04/2003 |
| 6635573 | Method of detecting an endpoint during etching of a material within a recess We have discovered a method of detecting the approach of an endpoint during the etching of a material within a recess such as a trench or a contact via. The method provides a clear and distinct inflection endpoint signal, even for areas of a substrate con... | 10/21/2003 |
| 6632321 | Method and apparatus for monitoring and controlling wafer fabrication process A method and apparatus for monitoring, measuring and/or controlling the etch rate in a dry etch semiconductor wafer processing system. The wafer processing system has a monitoring assembly which comprises an electromagnetic radiation source and detector w... | 10/14/2003 |
| 6627949 | High voltage power MOSFET having low on-resistance A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift re... | 09/30/2003 |
| 6626734 | Method and apparatus for wireless transfer of chemical-mechanical planarization measurements A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portio... | 09/30/2003 |
| 6624642 | Metal bridging monitor for etch and CMP endpoint detection Disclosed is a wafer containing a semiconductor substrate, at least one metal layer formed over the semiconductor substrate, and at least one electrical sensor embedded at least one of on and in the wafer to facilitate real time monitoring of the metal la... | 09/23/2003 |
| 6613683 | Method of manufacturing a contact hole of a semiconductor device A spacer is formed on a side wall of a gate electrode formed over a substrate, and a dielectric interlayer is then formed over the substrate, the gate electrode and the spacer. A region of the dielectric interlayer is then subjected to a first etching pro... | 09/02/2003 |
| 6612900 | Method and apparatus for wireless transfer of chemical-mechanical planarization measurements A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portio... | 09/02/2003 |
| 6602796 | Chemical vapor deposition for smooth metal films A method for growing smooth metal films using a first process phase favorable to nucleation, agglomeration and initiation of smooth metal film growth and a second process phase favorable to continued smooth metal film growth, a system for performing the m... | 08/05/2003 |
| 6592678 | Cleaning method and cleaning equipment A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connect... | 07/15/2003 |
| 6593619 | High voltage power MOSFET having low on-resistance A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift re... | 07/15/2003 |
| 6589869 | Film thickness control using spectral interferometry A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma ... | 07/08/2003 |
| 6590645 | System and methods for classifying anomalies of sample surfaces Two or more defect maps may be provided for the same sample surface at different detection sensitivities and/or processing thresholds. The defect maps may then be compared for better characterization of the anomalies as scratches, area anomalies or point ... | 07/08/2003 |
| 6579731 | Temperature measuring method and apparatus in semiconductor processing apparatus, and semiconductor processing method and apparatus A temperature measuring method for a target substrate to be thermally processed in a semiconductor processing apparatus under a predetermined process condition is provided. This method includes the steps of detecting a heat flux supplied from at least par... | 06/17/2003 |
| 6579732 | Method and apparatus for controlling material removal from a semiconductor substrate using induced current endpointing A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to ind... | 06/17/2003 |
| 6562254 | Etching method A method of reducing the thickness t of a layer of material on a substrate when the substrate is exposed to an etchant for a span of time sufficient to reduce t to a value to, at which point exposure to the etchant is interrupted, includes the ... | 05/13/2003 |
| 6562187 | Methods and apparatus for determining an etch endpoint in a plasma processing system Methods and apparatus for ascertaining the end of an etch process while etching through a target layer on a substrate in a plasma processing system which employs an electrostatic chuck. The end of the etch process is ascertained by monitoring the electric... | 05/13/2003 |
| 6563578 | In-situ thickness measurement for use in semiconductor processing A system and method are disclosed for providing in-situ monitoring of thin film thickness, such as by employing a non-destructive optical measurement technique. The monitored film thickness may be employed to help achieve a desired feature film thickness ... | 05/13/2003 |
| 6558966 | Apparatus and methods of packaging and testing die Apparatus and methods of packaging and testing die. In one embodiment, a stacked die package includes a packaging substrate having a first surface with a recess disposed therein and a plurality of conductive leads coupled thereto, a first die attached to ... | 05/06/2003 |
| 6555423 | Method of manufacturing a thin film transistor and a method of evaluating a polysilicon film In manufacturing a thin-film transistor the condition of a polysilicon film is evaluated, a manufacture margin for the film is determined from the condition evaluated, and the power of an excimer laser annealing apparatus is set based on the manufacture m... | 04/29/2003 |
| 6547639 | Method and apparatus for wireless transfer of chemical-mechanical planarization measurements A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portio... | 04/15/2003 |
| 6545279 | Surface state monitoring method and apparatus A surface state monitoring apparatus for monitoring a surface state of semiconductor substrates by infrared spectroscopy at fabrication site of semiconductor substrates. The apparatus comprises an incidence optical system for introducing infrared radiatio... | 04/08/2003 |
