Class 257/E21.488 - Using mask (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.487. This subclass
No. of patents: 2
Last issue date: 12/12/2006

Number	Title	Issue Date
7148102	Methods of forming buried bit line DRAM circuitry A method of forming buried bit line DRAM circuitry includes collectively forming a buried bit line forming trench, bit line vias extending from the bit line forming trench, and memory array storage node vias within a dielectric mass using only two masking steps. Con...	12/12/2006
5318666	Method for via formation and type conversion in group II and group VI materials A method of forming an n-p junction in a body (44, 44a, 44b) formed of Group II and Group VI elements. The body (44, 44a, 44b) initially is of p-type conductivity characteristic, and a dry reactive etching process is employed for forming a via (60, 60a, 6...	06/07/1994

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