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| Number | Title | Issue Date |
| 7442600 | Methods of forming threshold voltage implant regions The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertain... | 10/28/2008 |
| 7396745 | Formation of ultra-shallow junctions by gas-cluster ion irradiation Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams. ... | 07/08/2008 |
| 7262119 | Method for incorporating germanium into a semiconductor wafer A method of fabricating a semiconductor wafer includes fabricating a gate electrode on a silicon substrate of the semiconductor device and incorporating germanium into the silicon substrate thereafter. ... | 08/28/2007 |
| 7192853 | Method of improving the breakdown voltage of a diffused semiconductor junction A method is provided for forming a graded junction in a semiconductor material having a first conductivity type. Dopant having a second conductivity type opposite the first conductivity type is introduced into a selected region of the semiconductor material to defin... | 03/20/2007 |
| 5252499 | Wide band-gap semiconductors having low bipolar resistivity and method of formation A wide band-gap semiconductor, such as a II-VI semiconductor having low bipolar resistivity and a method for producing such a semiconductor. To form this semiconductor, atomic hydrogen is used to neutralize compensating contaminants. Alternatively, the se... | 10/12/1993 |
| 5227328 | Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations Epitaxial layers of II-VI semiconductors in-situ doped with high concentrations of a stable acceptor-type impurity and capped with a diffusion-limiting layer, when subjected to a rapid thermal anneal at a temperature between 700 and 950 degrees C., exhibi... | 07/13/1993 |
| 5024967 | Doping procedures for semiconductor devices A process is described for making semiconductor devices with highly controlled doping profiles. The process involves minimizing or eliminating segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields act ... | 06/18/1991 |
| 4904618 | Process for doping crystals of wide band gap semiconductors Non-equilibrium impurity incorporation is used to dope hard-to-dope crystals of wide band gap semiconductors, such as zinc selenide and zinc telluride. This involves incorporating into the crystal a compensating pair of primary and secondary dopants, ther... | 02/27/1990 |
| 4105472 | Preparation of silicon doped mercury cadmium telluride Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium... | 08/08/1978 |
| 4087293 | Silicon as donor dopant in Hg1-x Cdx Te Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium... | 05/02/1978 |
| 4053350 | Methods of defining regions of crystalline material of the group III-V compounds A thin coating of carbon is used as a mask to define regions of a crystalline material of the group III-V compounds. A carbon mask is coated on portions of a surface of a substrate and the masked substrate contacted with the group III-V material to deposi... | 10/11/1977 |
| 4038110 | Planarization of integrated circuit surfaces through selective photoresist masking An integrated circuit substrate surface, particularly a surface of electrically insulative material, having a pattern of elevated areas and a complementary pattern of unelevated areas is planarized by forming the photoresist pattern in registration with t... | 07/26/1977 |
