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| Number | Title | Issue Date |
| 7427788 | Multi bridge channel field effect transistors with nano-wire channels and methods of manufacturing the same A field effect transistor (FET) includes spaced apart source and drain regions disposed on a substrate and at least one pair of elongate channel regions disposed on the substrate and extending in parallel between the source and drain regions. A gate insulating regio... | 09/23/2008 |
| 7385273 | Power semiconductor device A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation body surrounding the active region and having a recess that includes a... | 06/10/2008 |
| 7348246 | Methods of fabricating non-volatile memory devices including divided charge storage structures A semiconductor memory device includes a substrate having first and second source/drain regions therein and a channel region therebetween. The device also includes first and second charge storage layers on the channel region, a first insulating layer on the channel ... | 03/25/2008 |
| 7312133 | Method of manufacturing semiconductor device A method of manufacturing a lateral trench-type MOSFET exhibiting a high breakdown voltage and including an offset drain region around a trench. Specifically, impurity ions are irradiated obliquely to the side wall of a trench to implant the impurity ions only into ... | 12/25/2007 |
| 7304347 | Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial l... | 12/04/2007 |
| 7301201 | High voltage device having polysilicon region in trench and fabricating method thereof A high voltage device prevents or minimizes the lowering of a maximum operating voltage range. Bulk resistances of the drift regions are reduced by forming trenches within the drift regions and filling the trenches with conductive polysilicon layers. The polysilicon... | 11/27/2007 |
| 7250343 | Power transistor arrangement and method for fabricating it In the case of the cost-effective method according to the invention for fabricating a power transistor arrangement, a trench power transistor arrangement (1) is fabricated with four patterning planes each containing a lithography step. The power transistor ar... | 07/31/2007 |
| 7233043 | Triple-diffused trench MOSFET A trench-gated MOSFET includes adjacent mesas formed on opposite sides of a trench. A body region in the first mesa extends downward below the level of the trenches and laterally across the bottom of the trenches. The body region in the second mesa extends part of t... | 06/19/2007 |
| 7187022 | Semiconductor device having a multi-bridge-channel and method for fabricating the same In a semiconductor device having a multi-bridge-channel, and a method for fabricating the same, the device includes first and second semiconductor posts protruding from a surface of a semiconductor substrate and having a source and a drain region, respectively, in u... | 03/06/2007 |
| 7034377 | Semiconductor device and method of manufacturing the device To reduce the on-resistance in a semiconductor device, such as a trench lateral power MOSFET, a trench etching region forms a mesh pattern in which a first trench section, formed in an active region, and a second trench section, formed in a gate region for leading o... | 04/25/2006 |
| 6703665 | Transistor A withstand voltage region of a second conductivity type is formed in a drain layer of a first conductivity type in a semiconductor substrate, and a conductive region of the first conductivity type is partly formed in the withstand voltage region by being... | 03/09/2004 |
| 6700175 | Vertical semiconductor device having alternating conductivity semiconductor regions There is provided a method of manufacturing a vertical semiconductor device including a structural section in which an n- -type semiconductor region and a p- -type semiconductor region are arranged alternately without filling trenche... | 03/02/2004 |
| 6693024 | Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating The semiconductor component is fabricated on the basis of a semiconductor body with a first and a second surface. A multiplicity of pores are formed in the semiconductor body. The pores extend into the semiconductor body proceeding from the first surface ... | 02/17/2004 |
| 6693338 | Power semiconductor device having RESURF layer A semiconductor device includes a drain layer, first and second drift layers, a RESURF layer, a drain electrode, a base layer, a source layer, a source electrode, and a gate electrode. The first drift layer is formed on the drain layer. The second drift l... | 02/17/2004 |
| 6693323 | Super-junction semiconductor device A method of manufacture reduces costs and provides an excellent mass-productivity, a super-junction semiconductor device, that facilitates reducing times of heat treatment of the alternating conductivity type layer subjects, and preventing the characteris... | 02/17/2004 |
| 6689662 | Method of forming a high voltage power MOSFET having low on-resistance A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift re... | 02/10/2004 |
| 6683347 | Semiconductor device with alternating conductivity type layer and method of manufacturing the same A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on- resistance while maintaining a high breakdow... | 01/27/2004 |
| 6673679 | Semiconductor device with alternating conductivity type layer and method of manufacturing the same A semiconductor device has an alternating conductivity type layer that improves the tradeoff relation between the ON-resistance and the breakdown voltage and a method of manufacturing such a semiconductor device. The alternating conductivity type layer is... | 01/06/2004 |
| 6670244 | Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity A method is provided for fabricating a body region of a first conduction type for a vertical MOS transistor configuration in a semiconductor body such that the body region has a reduced resistivity without a corresponding reduction in the breakdown voltag... | 12/30/2003 |
| 6664595 | Power MOSFET having low on-resistance and high ruggedness A power MOSFET is provided. In this power MOSFET, a drift region is formed on a drain region having the same conductivity type as that of the drain region using a semiconductor substrate of a first conductivity type. A gate electrode is formed on the drif... | 12/16/2003 |
| 6660571 | High voltage power MOSFET having low on-resistance A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift re... | 12/09/2003 |
| 6656797 | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first or second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depo... | 12/02/2003 |
| 6657257 | Insulated gate field effect transistor and semiconductor integrated circuit According to the present invention, there is provided an N-type insulated gate field effect transistor using an SOI substrate of which Si layer as a device formation area is N-type. The SOI substrate provided as the device formation area has the N-type se... | 12/02/2003 |
| 6653691 | Radio frequency (RF) power devices having faraday shield layers therein Integrated power devices include a plurality of field effect transistor unit cells and a Faraday shield layer that reduces parasitic gate-to-drain capacitance (Cgd) and concomitantly improves high frequency switching performance. These power devices may i... | 11/25/2003 |
| 6649478 | Semiconductor device and method of manufacturing same A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconduc... | 11/18/2003 |
| 6649975 | Vertical power devices having trench-based electrodes therein Vertical power devices include a semiconductor substrate having a drift region of first conductivity type therein and first and second stripe-shaped trenches that extend in the semiconductor substrate and define a drift region mesa therebetween. First and... | 11/18/2003 |
| 6649477 | Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an ... | 11/18/2003 |
| 6638824 | Metal gate double diffusion MOSFET with improved switching speed and reduced gate tunnel leakage A double-diffused metal-oxide-semiconductor ("DMOS") field-effect transistor (10) with a metal gate (26). A sacrificial gate layer is patterned to provide a self-aligned source mask. The source regions (20) are thus aligned to the gate (26), and the sourc... | 10/28/2003 |
| 6639272 | Charge compensation semiconductor configuration Charge balancing is achieved in a compensation component by creating compensation regions having different thickness. In this manner, the ripple of the electric field can be chosen to have approximately the same magnitude in all of the compensation region... | 10/28/2003 |
| 6635926 | Field effect transistor with high withstand voltage and low resistance A field effect transistor with a high withstand voltage and a low resistance is provided. A ring-shaped channel region is disposed inside a source region formed in a ring, and the inside of the channel region is taken as a drain region. A depletion layer ... | 10/21/2003 |
| 6627949 | High voltage power MOSFET having low on-resistance A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift re... | 09/30/2003 |
| 6624494 | Method for fabricating a power semiconductor device having a floating island voltage sustaining layer A power semiconductor device and a method of forming the same is provided. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by de... | 09/23/2003 |
| 6614090 | Compensation semiconductor component and method of fabricating the semiconductor component The semiconductor component is a charge carrier compensation component formed in a semiconductor body. A semiconductor basic body is disposed in the semiconductor body. The basic body has at least one compensation layer which adjoins a boundary layer and ... | 09/02/2003 |
| 6610572 | Semiconductor device and method for manufacturing the same A semiconductor device is provided which can be manufactured even by using an inexpensive FZ wafer in a wafer process and still has a sharp inclination of a high impurity concentration in a high impurity concentration layer at the outermost portion of the... | 08/26/2003 |
| 6611021 | Semiconductor device and the method of manufacturing the same A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufact... | 08/26/2003 |
| 6593619 | High voltage power MOSFET having low on-resistance A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift re... | 07/15/2003 |
| 6590240 | Method of manufacturing unipolar components A method of manufacturing a unipolar component of vertical type in a substrate of a first conductivity type, including the steps of: forming trenches in a silicon layer of the first conductivity type; coating the lateral walls of the trenches with a silic... | 07/08/2003 |
| 6586833 | Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines Packaged power devices include an electrically conductive flange having a slot therein and an electrically conductive substrate mounted within the slot. A dielectric layer is provided on the electrically conductive substrate and a gate electrode strip lin... | 07/01/2003 |
| 6586799 | Semiconductor device and method of manufacturing same A semiconductor device includes a semiconductor layer having a main surface (100a), a first region (101) of a first conductivity type, a second region (102) of a second conductivity type, and a third region (103) of the second conductivity type, the first... | 07/01/2003 |
| 6586798 | High voltage MOS-gated power device MOS-gated power device including a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type. A plurality of doped ... | 07/01/2003 |
