Did You Know...
...that power steering was invented by independent inventor Francis W. Davis? As chief engineer in the 1920s of the truck division of the Pierce Arrow Motor Car Company, he saw how hard it was to steer heavy vehicles. So that he would be able to keep the profits from his future invention, Davis left his job, rented a small engineering shop in Waltham, Mass., and developed a hydraulic power steering system that led to power steering.
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| Number | Title | Issue Date |
| 7442588 | Method for fabricating thin film transistor using local oxidation and transparent thin film transistor Disclosed is a method for fabricating a thin film transistor. Specifically, the method uses local oxidation wherein a portion of a transparent metal oxide layer is locally oxidized to be converted into a semiconductor layer so that the oxidized portion of the transp... | 10/28/2008 |
| 7439107 | Laser irradiation apparatus, method of irradiating laser light, and method of manufacturing a semiconductor device When the laser light is irradiated with high output in the manufacturing process for a semiconductor device, an attenuator is heated and cause a deformation due to the laser light scattered in the attenuator. As a result, the attenuation ratio of the attenuator fluc... | 10/21/2008 |
| 7432564 | Pixel structure A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semi... | 10/07/2008 |
| 7425479 | Method of manufacturing a thin film transistor array panel The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a ... | 09/16/2008 |
| 7425490 | Reducing reactions between polysilicon gate electrodes and high dielectric constant gate dielectrics In a metal gate replacement process, a gate electrode stack may be formed of a dielectric covered by a sacrificial metal layer covered by a polysilicon gate electrode. In subsequent processing of the source/drains, high temperature steps may be utilized. The sacrifi... | 09/16/2008 |
| 7420209 | Semiconductor device The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and... | 09/02/2008 |
| 7416928 | Manufacturing method of semiconductor device An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor... | 08/26/2008 |
| 7413940 | Thin-film transistor and fabrication method thereof A fabrication method of a TFT includes successively forming four thin films containing a first conductive layer, an insulation layer, a semiconductor layer, and a second conductive layer on a substrate, performing a first PEP process to pattern the four thin films f... | 08/19/2008 |
| 7410847 | Semiconductor device having semiconductor circuit formed by semiconductor elements and method for manufacturing the same There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same.... | 08/12/2008 |
| 7410839 | Thin film transistor and manufacturing method thereof The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semiconductor device which realizes ... | 08/12/2008 |
| 7397063 | Semiconductor device A semiconductor device comprises a glass substrate serving as a substrate having an insulated surface and a silicon layer located on a position overlapping with this glass substrate. The silicon layer includes an amorphous gettering region. Preferably, the silicon l... | 07/08/2008 |
| 7390703 | Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into conta... | 06/24/2008 |
| 7371621 | Thin film transistor array panel and fabrication The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting ... | 05/13/2008 |
| 7371625 | Semiconductor device and manufacturing method thereof, liquid crystal television system, and EL television system The present invention provides a method for a semiconductor device, which comprises the steps of forming a first conductive layer in contact with a semiconductor region, forming an insulating layer on the first conductive layer by one of droplet discharge and applic... | 05/13/2008 |
| 7368753 | Thin film transistor array substrate and fabricating method thereof A thin film transistor array substrate includes a first conductive pattern group including a gate electrode of a thin film transistor and a gate line connected to the gate electrode; a semiconductor pattern defining a channel of the thin film transistor; a second co... | 05/06/2008 |
| 7365817 | Multi-domain liquid crystal display and method for manufacturing the same The present invention relates to a multi-domain, specifically 4-domain, liquid crystal display and a method for manufacturing the same. In one aspect, the liquid crystal display includes a pair of opposed substrates and a liquid crystal injected and sealed between t... | 04/29/2008 |
| 7361929 | Field-effect transistors with weakly coupled layered inorganic semiconductors A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source ... | 04/22/2008 |
| 7348197 | Liquid crystal display device and fabrication method thereof A method for fabricating a liquid crystal display device includes providing first and second substrates; forming an active layer on the first substrate, wherein the active layer includes a source region, a drain region, a channel region, and a storage region; formin... | 03/25/2008 |
| 7338845 | Fabrication method of a low-temperature polysilicon thin film transistor An LTPS-TFT structure comprises a gate, a gate dielectric layer, a patterned silicon layer, a patterned insulating layer, an ohmic contact layer and a source/drain layer. The gate and the gate dielectric layer are disposed on the substrate. The patterned silicon lay... | 03/04/2008 |
| 7338846 | Fabricating method of pixel structure A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semi... | 03/04/2008 |
| 7323369 | Fabrication method for thin film transistor array substrate Scan lines are formed on a substrate. A patterned dielectric layer and a patterned semiconductor layer are formed to cover portions of the scan lines. A patterned transparent conductive layer and a patterned metal layer are sequentially formed to define data lines, ... | 01/29/2008 |
| 7319239 | Substrate for display device having a protective layer provided between the pixel electrodes and wirings of the active matrix substrate, manufacturing method for same, and display device The present invention provides the substrate for a display device, comprising a scan line, a signal line and a switching element on an insulating substrate, and further comprising an interlayer insulation film and a pixel electrode, the switching element is provided... | 01/15/2008 |
| 7316944 | Fabricating method of a liquid crystal display device A horizontal electric field applying type thin film transistor substrate of a LCD device having an increased aperture ratio as well as a simplified manufacturing process. The device includes a gate line having a double layered structure including a transparent first... | 01/08/2008 |
| 7317207 | Semiconductor device, method of making the same and liquid crystal display device To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A T... | 01/08/2008 |
| 7291522 | Semiconductor devices and methods of making In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a... | 11/06/2007 |
| 7273773 | Display device, method for manufacturing thereof, and television device The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display devi... | 09/25/2007 |
| 7238556 | Thin film transistor structure and method of manufacturing the same The present invention improves the quality of the TFT structure by avoiding photo-induced current, and lowers manufacturing costs by decreasing the number of masks required in the process, wherein the former is achieved by the stacked structure including a gate laye... | 07/03/2007 |
| 7202165 | Electronic device having a stacked wiring layer including Al and Ti In the case that a stacked layer, in which another metal layer is stacked on an Al layer or Al alloy layer having a low resistance, is used as a wiring material, an etchant is provided which can etch to a substantially equal etching rate by executing only one etchin... | 04/10/2007 |
| 7176496 | Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gat... | 02/13/2007 |
| 7157319 | Method of patterning a thin film transistor that includes simultaneously forming a gate electrode and a pixel electrode A high-precision patterning is conducted with a half-tone resist thickness being prevented from varying due to the presence/absence of a base film. A transmitting portion and two kinds of semi-transmitting portions, providing different quantities of transmitted ligh... | 01/02/2007 |
| 7078298 | Silicon-on-nothing fabrication process A method to fabricate a silicon-on-nothing device on a silicon substrate is provided. The disclosed silicon-on-nothing device is fabricated on an isolated floating silicon active area, thus completely isolated from the silicon substrate by an air gap. The isolated f... | 07/18/2006 |
| 7049163 | Manufacture method of pixel structure A manufacture method of a pixel structure is provided. A gate is formed over a substrate, and a gate insulator layer is formed over the substrate covering the gate. A semiconductor layer is formed over the gate insulator layer and a metal layer is formed over the se... | 05/23/2006 |
| 6700134 | Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same The present invention provides a semiconductor device and a method of manufacturing the same, the device being provided with a semiconductor circuit consisting of a semiconductor element that is capable of improving characteristics of a TFT and has unifor... | 03/02/2004 |
| 6693258 | Process for producing thin film semiconductor device and laser irradiation apparatus A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a s... | 02/17/2004 |
| 6693044 | Semiconductor device and method of manufacturing the same A semiconductor device, which uses a crystalline silicon film having high crystallinity and a flat surface with few ridges and has high characteristics, and a method of manufacturing the semiconductor device are provided. According to the manufacturing me... | 02/17/2004 |
| 6693297 | Thin film transistor formed by an etching process with high anisotropy The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insu... | 02/17/2004 |
| 6686230 | Semiconducting devices and method of making thereof A process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined dissociation temperature so that the gas dissociates into fractions, whereby those fract... | 02/03/2004 |
| 6683333 | Fabrication of electronic circuit elements using unpatterned semiconductor layers A thin-film transistor array comprises at least first and second transistors. Each of the first and second transistors include a shared silicon layer, i.e., an active layer. The shared semiconductor layer extends continuously between the first and second ... | 01/27/2004 |
| 6680223 | Semiconductor device and method of manufacturing the same In a bottom gate type semiconductor device made of a semiconductor layer with crystal structure, source/drain regions are constructed by a lamination layer structure including a first conductive layer (n+ layer), a second conductive layer (n | 01/20/2004 |
| 6678018 | Thin film transistor array substrate for a liquid crystal display and the method for fabricating the same A method for fabricating a thin film array substrate for a liquid crystal display includes steps of forming a gate line assembly and a common electrode line assembly on a first substrate. The gate line assembly includes a plurality of gate lines and gate ... | 01/13/2004 |
