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| Number | Title | Issue Date |
| 7442594 | Method for manufacturing a flat panel display with improved white balance Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G, and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and... | 10/28/2008 |
| 7439088 | Liquid crystal display device and fabricating method thereof An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line crossing each other to define a pixel region, a thin film transistor at a crossing of the gate and data lines, a metal pattern over the gate line, a passivation ... | 10/21/2008 |
| 7405464 | Array substrate, method of manufacturing the same and method of crystallizing silicon An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one b... | 07/29/2008 |
| 7402470 | Method of fabricating a thin film transistor array substrate A thin film transistor array substrate and a fabricating method for simplifying a process and reducing a manufacturing cost. In the thin film transistor array substrate, a gate line is formed on a substrate and a gate insulating film is formed on the gate line. A da... | 07/22/2008 |
| 7397063 | Semiconductor device A semiconductor device comprises a glass substrate serving as a substrate having an insulated surface and a silicon layer located on a position overlapping with this glass substrate. The silicon layer includes an amorphous gettering region. Preferably, the silicon l... | 07/08/2008 |
| 7393729 | Method for fabricating semiconductor device [Problem] To provide technology that allows, by controlling a crystal orientation, forming a crystalline semiconductor film aligned in orientation and obtaining a crystalline semiconductor film whose impurity concentration is reduced. [Means, for Resolution] ... | 07/01/2008 |
| 7375373 | Thin film transistor array panel A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, d... | 05/20/2008 |
| 7344926 | Liquid crystal display device and method of manufacturing the same A liquid crystal display device including first and second active layers over a substrate, a storage line over the second active layer, a first insulating layer over the storage line, a gate electrode on the first insulating layer and corresponding to the first acti... | 03/18/2008 |
| 7344928 | Patterned-print thin-film transistors with top gate geometry A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal l... | 03/18/2008 |
| 7341907 | Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor ... | 03/11/2008 |
| 7326959 | Thin film transistor with common contact hole and fabrication method thereof The present invention provides a TFT substrate that includes a plurality of TFTs each of which have a gate, a source and a drain. The plurality of the TFTs may be formed by first and second active regions formed on the substrate that each have a source region that c... | 02/05/2008 |
| 7320918 | Method and structure for buried circuits and devices A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component ... | 01/22/2008 |
| 7317227 | Method for forming pattern of stacked film A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switc... | 01/08/2008 |
| 7306981 | Semiconductor manufacturing method It is an object of the invention that, in semiconductor device, in order to promote the tendency of miniaturization of each display pixel pitch, which will be resulted in with the tendency toward the higher precision (increase of pixel number) and further miniaturiz... | 12/11/2007 |
| 7297578 | Method for producing a field effect transistor A field effect transistor is produced on a substrate. A semiconductor material is deposited on a portion of a single crystal temporary material. At least part of the temporary material is removed. A portion of a conducting material is then formed above and beneath t... | 11/20/2007 |
| 7232716 | Display device and method for manufacturing the same The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum va... | 06/19/2007 |
| 7226819 | Methods for forming wiring and manufacturing thin film transistor and droplet discharging method It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width acc... | 06/05/2007 |
| 7223627 | Memory element and its method of formation A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass... | 05/29/2007 |
| 7176074 | Manufacturing method of thin film transistor array substrate A manufacturing method of thin film transistor array substrate is provided. A substrate, whereon first, second, and third poly-silicon islands, a gate insulating layer, a plurality of first, second, and third gates, and a first passivation layer have been formed, is... | 02/13/2007 |
| 7084000 | Solid-state imaging device and method for manufacturing the same A solid-state imaging device according to the present invention includes a semiconductor substrate; a photoelectric conversion portion formed on the semiconductor substrate; a gate insulating film formed on the semiconductor substrate and covering the photoelectric ... | 08/01/2006 |
| 7064021 | Method for fomring a self-aligned LTPS TFT A method for forming a self-aligned low temperature polysilicon thin film transistor (LTPS TFT). First, active layers of a N type LTPS TFT (NLTPS TFT) and a P type LTPS TFT (PLTPS TFT) are formed on a substrate, and a gate insulating (GI) layer is formed on the subs... | 06/20/2006 |
| 6689649 | Methods of forming transistors An electrical interconnection method includes: a) providing two conductive layers separated by an insulating material on a semiconductor wafer; b) etching the conductive layers and insulating material to define and outwardly expose a sidewall of each cond... | 02/10/2004 |
| 6673661 | Self-aligned method for forming dual gate thin film transistor (TFT) device A method for fabricating a dual gate thin film transistor (TFT) device provides for forming a pair of source/drain layers self-aligned with respect to a first gate electrode and forming a second gate electrode self-aligned with respect to both the pair of... | 01/06/2004 |
| 6664143 | Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls Vertical field effect transistors are fabricated by depositing a vertical channel on a microelectronic substrate at a thickness along the microelectronic substrate that is independent of lithography, the vertical channel extending orthogonal to the microe... | 12/16/2003 |
| 6660576 | Substrate and method for producing variable quality substrate material A substrate and a method for fabricating variable quality substrate materials are provided. The method comprises: selecting a first mask having a first mask pattern; projecting a laser beam through the first mask to anneal a first area of semiconductor su... | 12/09/2003 |
| 6649032 | System and method for sputtering silicon films using hydrogen gas mixtures A method has been provided for forming a polycrystalline silicon (p-Si) film with a small amount of hydrogen. Such a film has been found to have excellent sheet resistance, and it is useful in the fabrication of liquid crystal display (LCD) panels made fr... | 11/18/2003 |
| 6646307 | MOSFET having a double gate A double gate MOSFET. The MOSFET includes a bottom gate electrode and a bottom gate dielectric disposed over the bottom gate electrode. A semiconductor body region is disposed over the bottom gate dielectric and the bottom gate electrode, and disposed bet... | 11/11/2003 |
| 6639246 | Semiconductor device There is a problem in that a possibility of a carrier being caused on an interface between a semiconductor layer and an insulating film is high, and the carrier is injected into the insulating film and the interface between the insulating film and the sem... | 10/28/2003 |
| 6617010 | Semiconductor thin film and thin film device A semiconductor thin film which is deposited by using a chemical vapor deposition method at an underlying layer temperature of 400° C. or less, and contains, as main component elements, a Group IV atom and hydrogen atom. A temperature dependency of an am... | 09/09/2003 |
| 6589821 | Methods of forming thin film transistors A method of forming a thin film transistor over a substrate is provided whereby at least one of the source region or the drain region is conductively doped while preventing conductivity doping of the channel region without any masking of the channel regio... | 07/08/2003 |
| 6573163 | Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. The method is also well suited to ... | 06/03/2003 |
| 6569715 | Large grain single crystal vertical thin film polysilicon mosfets A vertical thin film transistor formed in a single grain of polysilicon having few or no grain boundaries for use in memory, logic and display applications. The transistor is formed from a thin film of polysilicon having large columnar grains, in which so... | 05/27/2003 |
| 6559034 | Method of fabricating semiconductor device A method of fabricating a semiconductor device capable of improving productivity by efficiently polycrystallizing an amorphous silicon film is obtained. This method of fabricating a semiconductor device comprises steps of forming an amorphous film on a su... | 05/06/2003 |
| 6537890 | Poly-silicon thin film transistor having back bias effects and fabrication method thereof A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried... | 03/25/2003 |
| 6534788 | Thin film transistor having dual gate structure and a fabricating method thereof The present invention relates to a thin film transistor and a fabricating method thereof, wherein the source and drain wires are located on a substrate and a double gate structure is provided, whereby the driving capacity of on-current is improved and the... | 03/18/2003 |
| 6521912 | Semiconductor device A silicon oxynitride film is manufactured using SiH4, N2 O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled c... | 02/18/2003 |
| 6495403 | Gate-all-around semiconductor device and process for fabricating the same A method is provided for fabricating a semiconductor device having a gate-all-around architecture. A substrate is produced so as to include an active central region with an active main surface surrounded by an insulating peripheral region with an insulati... | 12/17/2002 |
| 6479332 | Methods of forming integrated circuitry An electrical interconnection method includes: a) providing two conductive layers separated by an insulating material on a semiconductor wafer; b) etching the conductive layers and insulating material to define and outwardly expose a sidewall of each cond... | 11/12/2002 |
| 6461984 | Semiconductor device using N2O plasma oxide and a method of fabricating the same The present invention provides a highly reliable polycrystal silicon thin film transistor with N2 O plasma oxide having an excellent leakage current characteristics comparable to the thermal oxide film formed on the crystalline silicon. Also, t... | 10/08/2002 |
| 6458633 | Thin film transistor and method for fabricating the same A thin film transistor and a method for fabricating the same are disclosed, in which an offset region is affected or biased by a gate voltage to increase on-current, thereby improving on/off characteristic of a device. A first semiconductor layer is forme... | 10/01/2002 |
