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| Number | Title | Issue Date |
| 7442604 | Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric films Provided are methods of manufacturing dielectric films including forming a first dielectric film on a wafer using atomic layer deposition (ALD) in a first batch type apparatus, forming a second dielectric film on the first dielectric film using atomic layer depositi... | 10/28/2008 |
| 7439568 | Vertical body-contacted SOI transistor A vertical field effect transistor (“FET”) is provided which includes a transistor body region and source and drain regions disposed in a single-crystal semiconductor-on-insulator (“SOI”) region of a substrate adjacent a sidewall of a trench. The substrate i... | 10/21/2008 |
| 7439128 | Method of creating deep trench capacitor using a P+ metal electrode The present invention comprises a method including the steps of providing a substrate; forming a trench in the substrate; forming a buried plate in the substrate about the trench; depositing a dielectric layer within the trench; and then depositing a P-type metal at... | 10/21/2008 |
| 7439112 | Semiconductor device using partial SOI substrate and manufacturing method thereof A semiconductor device manufacturing method includes selectively removing portions of a buried oxide layer and first semiconductor layer in an SOI substrate having the first semiconductor layer formed above a semiconductor substrate with the buried oxide layer dispo... | 10/21/2008 |
| 7439149 | Structure and method for forming SOI trench memory with single-sided strap A method of forming a trench memory cell includes forming a trench capacitor within a substrate material, the trench capacitor including a node dielectric layer formed within a trench and a conductive capacitor electrode material formed within the trench in contact ... | 10/21/2008 |
| 7425486 | Method for forming a trench capacitor A method for forming a trench capacitor is presented in the following process steps. A trench is formed on a semiconductor substrate. A first trench dielectric is deposited into the trench without reaching a full height thereof. An etch stop layer is formed on the f... | 09/16/2008 |
| 7423311 | Atomic layer deposition of ZrN/ZrOfilms as gate dielectrics The use of atomic layer deposition (ALD) to form a dielectric layer of zirconium nitride (Zr3N4) and zirconium oxide (ZrO2) and a method of fabricating such a dielectric layer produces a reliable structure for use in a variety of ele... | 09/09/2008 |
| 7410862 | Trench capacitor and method for fabricating the same A trench capacitor with an isolation collar in a semiconductor substrate where the substrate adjacent to the isolation collar is free of dopants caused by auto-doping. The method of fabricating the trench capacitor includes the steps of forming a trench in the semic... | 08/12/2008 |
| 7410863 | Methods of forming and using memory cell structures A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a metallic material formed within the via and on a surface of the insulator... | 08/12/2008 |
| 7405167 | Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of conductive nanoparticles in an organic material disposed between the two... | 07/29/2008 |
| 7405439 | Memory cell structure and semiconductor memory device A memory cell structure comprises a first memory capacitor that is arranged in a first local area, and includes a first lower electrode, a first upper electrode, and a first dielectric oxide film interposed between the first lower electrode and the first upper elect... | 07/29/2008 |
| 7402487 | Process for fabricating a semiconductor device having deep trench structures A process for fabricating a semiconductor device having deep trench structures includes forming a first portion of the trench in a semiconductor substrate and a second portion of the trench in a selectively-formed upper layer. After etching the substrate to form the... | 07/22/2008 |
| 7393753 | Method for forming a storage cell capacitor compatible with high dielectric constant materials Described are integrated circuit electrodes and method for fabricating an electrode, which include, in an embodiment forming a silicon, first portion of the electrode in a lower region of a substrate opening. The method may further include forming a second portion o... | 07/01/2008 |
| 7387939 | Methods of forming semiconductor structures and capacitor devices The invention includes methods of forming semiconductor constructions and methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive material within openings in an insulative material to form capacitor elect... | 06/17/2008 |
| 7384842 | Methods involving silicon-on-insulator trench memory with implanted plate A method for fabricating silicon-on-insulator (SOI) trench memory includes forming a trench on a substrate, wherein a buried oxide layer is disposed on the substrate, a SOI layer is disposed on the buried oxide layer, and a hardmask layer is disposed on the SOI laye... | 06/10/2008 |
| 7368779 | Hemi-spherical structure and method for fabricating the same Hemi-spherical structure and method for fabricating the same. A device includes discrete pillar regions on a substrate, and a pattern layer on the discrete support structures and the substrate. The pattern layer has hemi-spherical film regions on the discrete suppor... | 05/06/2008 |
| 7364979 | Capcitor with single crystal tantalum oxide layer and method for fabricating the same A capacitor and a method for fabricating the same are provided. The capacitor includes: a substrate; an inter-layer insulation layer formed over the substrate and including a contact hole; a storage node formed over the inter-layer insulation layer and filled into t... | 04/29/2008 |
| 7344953 | Process for vertically patterning substrates in semiconductor process technology by means of inconformal deposition On a substrate surface, which has been patterned in the form of a relief, of a substrate, typically of a semiconductor wafer, a deposition process is used to provide a covering layer on process surfaces which are vertical or inclined with respect to the substrate su... | 03/18/2008 |
| 7339224 | Trench capacitor and corresponding method of production The invention relates to a trench capacitor, in particular for use in a semiconductor memory cell, comprising a trench (2), embodied in a substrate (1), a first region (1a), provided in the substrate (1), as first capacitor electro... | 03/04/2008 |
| 7335553 | Method for forming trench capacitor and memory cell A method for forming a trench capacitor and memory cell by providing a substrate on which a grid STI and a plurality of active regions covered by a hard mask layer are formed. A photoresist is formed and a low grade photo mask having only X direction consideration i... | 02/26/2008 |
| 7332394 | Method to reduce a capacitor depletion phenomena A method of integrating the fabrication of a capacitor cell and a logic device region, wherein the surface area of a capacitor region is increased, and the risk of a capacitor depletion phenomena is reduced, has been developed. After formation of insulator filled ST... | 02/19/2008 |
| 7332391 | Method for forming storage node contacts in semiconductor device A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen diffusion preventing layer on the interlayer dielectric layer; forming a h... | 02/19/2008 |
| 7332392 | Trench-capacitor DRAM device and manufacture method thereof A trench capacitor structure includes a semiconductor substrate comprising thereon a STI structure. A capacitor deep trench is etched into the semiconductor substrate. Collar oxide layer is disposed on inner surface of the capacitor deep trench. A first doped polysi... | 02/19/2008 |
| 7332390 | Semiconductor memory device and fabrication thereof A semiconductor memory device and fabrication method thereof. In a semiconductor memory device, each memory cell comprises a deep trench and a capacitor disposed on the lower portion thereof. A collar oxide layer having a first second sidewalls is disposed on the de... | 02/19/2008 |
| 7316951 | Fabrication method for a trench capacitor having an insulation collar The present invention provides a fabrication method for a trench capacitor having an insulation collar (10) in a silicon substrate (1), having the steps of: providing a trench (5) in the silicon substrate (1); providing the insulation col... | 01/08/2008 |
| 7303970 | Method of fabricating dielectric mixed layers and capacitive element and use thereof The present invention provides a method for fabricating a capacitive element (100), a substrate (101) being provided as a first electrode layer of the capacitive element (100), the substrate (101) provided as an electrode layer is conditi... | 12/04/2007 |
| 7294543 | DRAM (Dynamic Random Access Memory) cells A DRAM cell with a self-aligned gradient P-well and a method for forming the same. The DRAM cell includes (a) a semiconductor substrate; (b) an electrically conducting region including a first portion, a second portion, and a third portion; (c) a first doped semicon... | 11/13/2007 |
| 7271056 | Method of fabricating a trench capacitor DRAM device The present invention discloses a STI-first process for making trench DRAM devices. According to the preferred embodiment, the etching recipe for etching the STI region in the memory array is completely compatible with the logic STI process. ... | 09/18/2007 |
| 7265020 | Semiconductor device with DRAM cell and method of manufacturing the same A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, isotropically forming a trench surface insulating film on an inner surface of the trench, the trench surface insulating film including a deep part functioning as... | 09/04/2007 |
| 7262452 | Method of forming DRAM device having capacitor and DRAM device so formed In a method of forming a DRAM device having a capacitor and a DRAM device so formed, an interlayer dielectric having at least one layer is formed on a semiconductor substrate. The interlayer dielectric layer and a predetermined portion of the semiconductor substrate... | 08/28/2007 |
| 7259061 | Method for forming a capacitor for an integrated circuit and integrated circuit Integrated circuits can include an integrated capacitor with a metal alloy layer. Methods for forming such integrated circuits can include providing a substrate, forming a first electrode including depositing a metal alloy layer having a first surface and an exposed... | 08/21/2007 |
| 7220652 | Metal-insulator-metal capacitor and interconnecting structure A method of manufacturing a MIM capacitor and a interconnecting structure using a damascene process. The MIM capacitor and the first interconnecting structure can be formed at equal depths. ... | 05/22/2007 |
| 7217616 | Non-volatile memory cell and method of forming the same A non-volatile memory cell comprising a transistor and two plane capacitors. In the memory cell, a switching device is disposed on a substrate, a first plane capacitor having a first doped region and a second plane capacitor having a second doped region. The switchi... | 05/15/2007 |
| 7214982 | Semiconductor memory device and method of manufacturing the same A semiconductor device including a ferroelectric random access memory, which has a structure suitable for miniaturization and easy to manufacture, and having less restrictions on materials to be used, comprises a field effect transistor formed on a surface area of a... | 05/08/2007 |
| 7163853 | Method of manufacturing a capacitor and a metal gate on a semiconductor device A method of manufacturing a capacitor and a metal gate on a semiconductor device comprises forming a dummy gate on a substrate, forming a trench layer on the substrate and adjacent the dummy gate, forming a capacitor trench in the trench layer, forming a bottom elec... | 01/16/2007 |
| 7157328 | Selective etching to increase trench surface area The surface area of the walls of a trench formed in a substrate is increased. A barrier layer is formed on the walls of the trench such that the barrier layer is thinner near the corners of the trench and is thicker between the corners of the trench. A dopant is int... | 01/02/2007 |
| 7153740 | Fabrication of lean-free stacked capacitors For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings... | 12/26/2006 |
| 7144772 | Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same A semiconductor device having MIM capacitors is configured so that the bottom surface of the lower electrode and a top surface area of an oxidation barrier pattern are substantially equal. Related methods for forming the device are also described. ... | 12/05/2006 |
| 7115933 | Integrated circuit and fabrication process An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device includes a substrate having a lower region containing at least one buried ... | 10/03/2006 |
| 7071054 | Methods of fabricating MIM capacitors in semiconductor devices Methods of fabricating an MIM capacitor and a dual damascene structure of a semiconductor device are disclosed. According to one example, a method includes depositing a first insulating layer on a semiconductor substrate; forming a lower interconnect through the fir... | 07/04/2006 |
