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Thomas Edison ; 1922
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| Number | Title | Issue Date |
| 7224026 | Nanoelectronic devices and circuits Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at... | 05/29/2007 |
| 5834793 | Semiconductor devices A semiconductor device has a semiconductor substrate, a source and a drain region, each formed at the surface of said semiconductor substrate, and each having a potential barrier with respect to the semiconductor substrate. A gate electrode is formed on t... | 11/10/1998 |