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Class 257/E21.367 - With an heterojunction, e.g., resonant tunneling diodes (RTD) (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.366. This
No. of patents: 4
Last issue date: 09/09/1997


NumberTitleIssue Date
5665999Metal-semiconductor diode and process for preparing metal-semiconductor diodes
It is suggested for a metal-semiconductor diode that the depletion zone layer be grown epitaxially from deformed Inx Ga1-x As with an indium content x increasing in the direction of the metal contact and/or that a diode area be delim...
09/09/1997
5659179Ultra-small semiconductor devices having patterned edge planar surfaces
Ultra-small semiconductor devices and a method of fabrication including patterning the planar surface of a substrate to form a pattern edge (e.g. a mesa) and consecutively forming a plurality of layers of semiconductor material in overlying relationship t...
08/19/1997
5294564Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding products
The invention pertains to the field of fabrication, by vapor phase deposition, of the thin layers of monocrystalline, polycrystalline or amorphous material on a substrate having an identical or different nature. The aim is to provide a method, enabling th...
03/15/1994
5198879Heterojunction semiconductor device
A heterojunction semiconductor device utilizing a quantum-mechanical effect comprises a first compound semiconductor (e.g., AlGaAs) layer and a second compound semiconductor (e.g., GaAs) layer having an electron affinity different from that of the first s...
03/30/1993
 
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