Celebrity Inventors
Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.
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| Number | Title | Issue Date |
| 7317213 | Semiconductor device having super junction structure and method for manufacturing the same A semiconductor device includes: a center region; a periphery region; and a semiconductor layer including pairs of a first region having a first impurity amount and a second region having a second impurity amount. The first and the second regions are alternately ali... | 01/08/2008 |
| 6602769 | Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same A bi-directional transient voltage suppression device with symmetric current-voltage characteristics has a lower semiconductor layer of first conductivity type, an upper semiconductor layer of first conductivity type, and a middle semiconductor layer adja... | 08/05/2003 |
| 6600204 | Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same A bi-directional transient voltage suppression device is provided. The device comprises: (a) a lower semiconductor layer of p-type conductivity; (b) an upper semiconductor layer of p-type conductivity; (c) a middle semiconductor layer of n-type conductivi... | 07/29/2003 |
| 6489660 | Low-voltage punch-through bi-directional transient-voltage suppression devices A bi-directional transient voltage suppression device with symmetric current-voltage characteristics has a lower semiconductor layer of first conductivity type, an upper semiconductor layer of first conductivity type, and a middle semiconductor layer adja... | 12/03/2002 |
| 5472908 | Method for manufacturing a power semiconductor component for high speed current switching The destruction-free rapid dismantling of current of power semiconductor components can be substantially enhanced when the inhibiting pn-junction is produced with a polished surface of the semiconductor body. The pn-junction thus becomes so uniform that l... | 12/05/1995 |
| 4040869 | High voltage deep diode power semiconductor switch A semiconductor switch is a lamellar body of semiconductor material having two major opposed surfaces and at least one group of four regions of alternate type conductivity. At least three of the four regions have recrystallized semiconductor material havi... | 08/09/1977 |
| 3988769 | High voltage diodes A high voltage diode has a lamellar structured body of semiconductor material. The lamellar structure is produced by the thermal gradient zone melting process method of thermo migrating metal "wires" through the body to form a plurality of spaced regions ... | 10/26/1976 |
| 3988767 | High voltage deep diode power semiconductor switch A semiconductor switch is a lamellar body of semiconductor material having two major opposed surfaces and at least one group of four regions of alternate type conductivity. At least three of the four regions have recrystallized semiconductor material havi... | 10/26/1976 |
| 3975213 | High voltage diodes A high voltage diode has a lamellar structured body of semiconductor material. The lamellar structure is produced by the thermal gradient zone melting process method of migrating metal "wires" through the body to form a plurality of spaced regions of cond... | 08/17/1976 |
