Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 7381997 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 06/03/2008 |
| 7335927 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 02/26/2008 |
| 7326965 | Surface-emitting type device and its manufacturing method A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted with respect to the second f... | 02/05/2008 |
| 6699775 | Manufacturing process for fast recovery diode A termination structure and reduced mask process for its manufacture for either a FRED device or any power semiconductor device comprises at least two concentric diffusion guard rings and two spaced silicon dioxide rings used in the definition of the two ... | 03/02/2004 |
| 6692998 | Integrated high quality diode A high-quality diode is formed in an SOI process, using standard steps and implant doses that are used in the process for other devices such as a FET and a buried resistor; in particular using a buried resistor mask and implant to form one side of the dio... | 02/17/2004 |
| 6693024 | Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating The semiconductor component is fabricated on the basis of a semiconductor body with a first and a second surface. A multiplicity of pores are formed in the semiconductor body. The pores extend into the semiconductor body proceeding from the first surface ... | 02/17/2004 |
| 6646304 | Universal semiconductor wafer for high-voltage semiconductor components A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type. A plurality of floating semiconductor zones o... | 11/11/2003 |
| 6639301 | Semiconductor device and manufacturing method thereof A semiconductor device embraces an n-type first semiconductor region, defined by first and second end surfaces and a first outer surface connecting the first and second end surfaces; a p-type second semiconductor region, defined by third and fourth end su... | 10/28/2003 |
| 6635494 | Method of forming a two-dimensionally arrayed quantum device using a metalloprotein complex as a quantum-dot mask array A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of t... | 10/21/2003 |
| 6605854 | Schottky diode with bump electrodes The package size of a diode is made smaller. On the element forming face of a semiconductor substrate having a p- -type conductive type, after a hyper-abrupt p+ n+ junction of a p+ -type diffusion layer, an n | 08/12/2003 |
| 6603153 | Fast recovery diode and method for its manufacture A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recover... | 08/05/2003 |
| 6580150 | Vertical junction field effect semiconductor diodes Semiconductor diodes are diode connected vertical cylindrical field effect devices having one diode terminal as the common connection between a gate and a source/drain of the vertical cylindrical field effect devices. Methods of forming the diode connecte... | 06/17/2003 |
| 6579772 | Discrete semiconductor device and manufacturing method thereof A semiconductor device is provided, which prevents the development of localized breakdowns at the semiconductor sidewall, having a stabilized, desired breakdown voltage. It embraces a p-type third semiconductor region formed on a first main surface of an ... | 06/17/2003 |
| 6500741 | Method for making high voltage device An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semicon... | 12/31/2002 |
| 6501146 | Semiconductor device and method of manufacturing thereof A plurality of p anode regions are formed at one surface of an n- substrate. A trench is formed in each p anode region. An ohmic junction region is formed between an anode metallic electrode and the p anode region. The p anode region has a mini... | 12/31/2002 |
| 6495888 | Semiconductor device with p-n junction diode and method of forming the same The present invention provides a semiconductor device having: a first semiconductor region of a first conductivity type having a first area and a second area; at least a diffusion region of a second conductivity type being provided on the first area and i... | 12/17/2002 |
| 6495900 | Insulator for electrical structure Structures and methods are disclosed for insulating a polysilicon gate adjacent to an electrically active region with a silicon base layer. A layer of silicon nitride having a thickness in a range from about 100 Å to about 150 Å is conformally deposited... | 12/17/2002 |
| 6489215 | Method of making insulator for electrical structures Structures and methods are disclosed for insulating a polysilicon gate adjacent to an electrically active region with a silicon base layer. A layer of silicon nitride having a thickness in a range from about 100 Å to about 150 Å is conformally deposited... | 12/03/2002 |
| 6479885 | High voltage device and method An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semicon... | 11/12/2002 |
| 6469368 | Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method In a method for producing a high-speed power diode with soft recovery, in which method the carrier life within the associated semiconductor substrate (10) is governed by first, unmasked bombardment (14) with an axial profile and by subsequent, second, mas... | 10/22/2002 |
| 6433370 | Method and apparatus for cylindrical semiconductor diodes Semiconductor diodes are diode connected cylindrical junction field effect devices having one diode terminal as the common connection between a top gate, a back gate and a first channel terminal of the cylindrical junction field effect devices. The second... | 08/13/2002 |
| 6403989 | Semiconductor device, method of manufacturing same, and circuit provided with such a device The invention relates to a semiconductor device (10) comprising a semiconductor body (11) including, in succession, a first and a second semiconductor region (1, 2) of a first conductivity type having, respectively, a high and a low doping concentration, ... | 06/11/2002 |
| 6400000 | Semiconductor device with a diode, and method of manufacturing such a device The invention relates to a semiconductor device with a diode. The semiconductor body (10) comprises a stack of a first semiconductor region provided with a first connection conductor (5) and a second semiconductor region (2) connected to a second connecti... | 06/04/2002 |
| 6392913 | Method of forming a polysilicon diode and devices incorporating such diode A method for manufacturing a diode having a relatively improved on-off ratio. The diode is formed in a container in an insulative structure layered on a substrate of an integrated circuit. The container is then partially filled with a polysilicon material... | 05/21/2002 |
| 6383836 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring reg... | 05/07/2002 |
| 6376346 | High voltage device and method for making the same An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semicon... | 04/23/2002 |
| 6355971 | Semiconductor switch devices having a region with three distinct zones and their manufacture In a semiconductor switch device such as an NPN transistor (T) or a power switching diode (D), a multiple-zone first region (1) of one conductivity type forms a switchable p-n junction (12) with a second region (2) of opposite conductivity type. In accord... | 03/12/2002 |
| 6351023 | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same A semiconductor device such as a P-N or P-I-N junction diode, includes a first semiconductor layer having a first conductivity-type and being mounted over a metal address line, and a second semiconductor layer having a second conductivity-type and being m... | 02/26/2002 |
| 6346444 | Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor sub... | 02/12/2002 |
| 6319738 | Two-dimensionally arrayed quantum device fabrication method A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of t... | 11/20/2001 |
| 6287928 | Two-dimensionally arrayed quantum device A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of the... | 09/11/2001 |
| 6261874 | Fast recovery diode and method for its manufacture A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recover... | 07/17/2001 |
| 6229157 | Method of forming a polysilicon diode and devices incorporating such diode A method for manufacturing a diode having a relatively improved on-off ratio. The diode is formed in a container in an insulative structure layered on a substrate of an integrated circuit. The container is then partially filled with a polysilicon material... | 05/08/2001 |
| 6221688 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring reg... | 04/24/2001 |
| 6194746 | Vertical diode structures with low series resistance A vertical diode is provided having a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the diode opening and contacts the active region. The di... | 02/27/2001 |
| 6190996 | Method of making an insulator for electrical structures Structures and methods are disclosed for insulating a polysilicon gate adjacent to an electrically active region with a silicon base layer. A layer of silicon nitride having a thickness in a range from about 100 Å to about 150 Å is conformally deposited... | 02/20/2001 |
| 6190947 | Silicon semiconductor rectifier chips and manufacturing method thereof This invention is directed to a semiconductor rectifier chip comprised of a semiconductor dice with at least one P-N junction, and the entire cutting surface of the dice sealed a passivation glass to omite the use of a expansion plate. The rectifier chip ... | 02/20/2001 |
| 6180444 | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same A semiconductor device such as a P-N or P-I-N junction diode, includes a first semiconductor layer having a first conductivity-type and being mounted over a metal address line, and a second semiconductor layer having a second conductivity-type and being m... | 01/30/2001 |
| 6175143 | Schottky barrier A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring reg... | 01/16/2001 |
| 6160306 | Diode of semiconductor device and method for manufacturing the same A semiconductor diode device having the characteristic of soft recovery and a method for manufacturing the same. A first N+ layer contacts with a cathode electrode. An N- epitaxial layer is formed on the first N+ layer. A P- layer is formed to have an und... | 12/12/2000 |
