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Method and apparatus for making a drink hop along a bar or counter
A method for generating a drink which appears to hop from a remote spot on the bar or counter and take one or more leaps, before landing in a patron's glass.
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| Number | Title | Issue Date |
| 7419883 | Method for fabricating a semiconductor structure having selective dopant regions A method for fabricating a semiconductor structure having selective dopant regions in a semiconductor substrate having trenches formed therein I disclosed. In one embodiment, by a dopant source of an auxiliary structure, parts of the semiconductor structure which li... | 09/02/2008 |
| 7397074 | RF field heated diodes for providing thermally assisted switching to magnetic memory elements An exemplary array of thermally-assisted magnetic memory structures includes a plurality of magnetic memory elements, each magnetic memory element being near a diode. A diode near a selected magnetic memory element can be heated by absorbing energy from a radio freq... | 07/08/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7344952 | Laminating encapsulant film containing phosphor over LEDs A process is described for wavelength conversion of LED light using phosphors. LED dies are tested for correlated color temperature (CCT), and binned according to their color emission. The LEDs in a single bin are mounted on a single submount to form an array of LED... | 03/18/2008 |
| 7326598 | Method of fabricating polycrystalline silicon A method of fabricating polycrystalline silicon according to an embodiment includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in th... | 02/05/2008 |
| 7314770 | Method of making light emitting device with silicon-containing encapsulant A method of making a light emitting device is disclosed. The method includes the steps of providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting dio... | 01/01/2008 |
| 7288428 | Solid state image pickup device and manufacturing method thereof and semiconductor integrated circuit device and manufacturing method thereof A method of manufacturing a solid-state image pickup device comprises a process for forming a plurality of photoelectric conversion elements PD within a semiconductor substrate 4, a process for forming an interconnection portion, having an interconnection lay... | 10/30/2007 |
| 7285458 | Method for forming an ESD protection circuit An ESD protection circuit is formed at the input/output interface contact of an integrated circuit to protect the integrated circuit from damage caused by an ESD event. The ESD protection circuit has a polysilicon bounded SCR connected between a signal input/output ... | 10/23/2007 |
| 7268010 | Method of manufacturing an LED The present invention related to a method of manufacturing an LED, including the steps of: first, forming a tape coppery metal strip; then, continuously pressing circuits on the tape coppery metal strip so as to form a carrier having circuit patterns of electric con... | 09/11/2007 |
| 7262110 | Trench isolation structure and method of formation In general, the present invention discloses at least one trench isolation region formed in a semiconductor substrate to electrically and/or optically isolate at least one active region from another active region. The at least one trench isolation region comprises a ... | 08/28/2007 |
| 7141484 | Electrostatic discharge protection circuit of non-gated diode and fabrication method thereof A non-gated diode structure of a silicon-on-insulator, having a silicon-on-insulator substrate, a pair of isolating structures, a first type doped region and a second type doped region. The silicon-on-insulation substrate has a stack of a substrate, an insulation la... | 11/28/2006 |
| 6673679 | Semiconductor device with alternating conductivity type layer and method of manufacturing the same A semiconductor device has an alternating conductivity type layer that improves the tradeoff relation between the ON-resistance and the breakdown voltage and a method of manufacturing such a semiconductor device. The alternating conductivity type layer is... | 01/06/2004 |
| 6603189 | Semiconductor device with deliberately damaged layer having a shorter carrier lifetime therein A technique of improving a reverse recovery characteristic of a semiconductor device which solves a technical problem of breakdown voltage reduction which has conventionally caused in enhancing soft recover. To solve the technical problem, in a PN junctio... | 08/05/2003 |
| 6537860 | Method of fabricating power VLSI diode devices A method for manufacturing a discrete power rectifier device having a VLSI multi-cell design employs a two spacer approach to defining a P/N junction profile having good breakdown voltage characteristics. The method provides highly repeatable device chara... | 03/25/2003 |
| 6518197 | Method for manufacturing semiconductor device According to a method for manufacturing a semiconductor device having a junction boundary where SiGe of a first conductivity type and Si or SiGe of a second conductivity type come in contact with each other, a portion where the junction boundary is expose... | 02/11/2003 |
| 6475876 | Process for fabricating a semiconductor component In a process for fabricating a semiconductor component, in particular a semiconductor diode, a semiconductor substrate (1) is provided with metal layers (3, 4) in order to form electrode terminals and with passivation (2), and is exposed to particle irrad... | 11/05/2002 |
| 6444549 | Thermal processing of semiconductor devices Upon fabrication of semiconductor devices, a semiconductor substrate is subjected to ion implantation with high energy. Subsequent annealing of the ion-implanted semiconductor substrate, when conducted by heating the substrate to a temperature of from 1,0... | 09/03/2002 |
| 6420757 | Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability Semiconductor diodes are diode connected cylindrical field effect transistors having one diode terminal as the common connection between the gate and the drain of the cylindrical field effect transistors. The method of processing the field effect transist... | 07/16/2002 |
| 6271050 | Method of manufacturing thin film diode A method of manufacturing a thin film diode incorporated in a liquid crystal display, comprising a lower electrode connected with a signal electrode, an anodic oxidation film formed on the surface of the lower electrode, and an upper electrode formed so a... | 08/07/2001 |
| 6093243 | Semiconductor device and its fabricating method A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter... | 07/25/2000 |
| 6066872 | Semiconductor device and its fabricating method A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter... | 05/23/2000 |
| 6040201 | Method of manufacturing thin film diode A method of manufacturing a thin film diode incorporated in a liquid crystal display, comprising a lower electrode connected with a signal electrode, an anodic oxidation film formed on the surface of the lower electrode, and an upper electrode formed so a... | 03/21/2000 |
| 6015978 | Resonance tunnel device The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etch... | 01/18/2000 |
| 6011272 | Silicided shallow junction formation and structure with high and low breakdown voltages A method, and structure resulting therefrom, of forming a metal silicide at a shallow junction of a diode in a single crystalline substrate without encroaching on the shallow junction by forming a metal layer on the substrate over the junction followed by... | 01/04/2000 |
| 5962878 | Surge protection device and method of fabricating the same In a bidirectional surge protection device formed on a semiconductor substrate, buried layers, which have the same conduction type as and are higher in impurity concentration than the semiconductor substrate, are formed on the entire surfaces of the devic... | 10/05/1999 |
| 5950068 | Method of fabricating semiconductor devices having a mesa structure for improved surface voltage breakdown characteristics A semiconductor device comprises a monocrystalline silicon wafer having a major surface lying in the {100} crystal plane. Disposed on the surface is a mesa having a generally square cross-section with generally rounded corners. The mesa has four main side... | 09/07/1999 |
| 5933715 | Process for manufacturing discrete electronic devices A process for manufacturing discrete electronic devices with active structures in an SOI (silicon-on-insulator) substrate which is thickened by an epitaxial layer and whose surface has a orientation, said process comprising the steps of: anisotropic... | 08/03/1999 |
| 5888852 | Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etch... | 03/30/1999 |
| 5879960 | Manufacturing method of thin film diode for liquid crystal display device A thin film diode (8) between a data line (12) and a drive electrode (13), which is free from breakage in an upper layer film (4), is formed on one inner surface of a glass substrate (1) sealing a liquid crystal of a liquid crystal display device. To form... | 03/09/1999 |
| 5879447 | Semiconductor device and its fabricating method A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter... | 03/09/1999 |
| 5851906 | Impurity doping method In order to dope impurities selectively at low temperature where the resist can be used, the invention presents an impurity doping method capable of performing not only cleaning process but also doping process at low temperature where the resist can be us... | 12/22/1998 |
| 5795458 | Manufacturing method of thin film diode for liquid crystal display device A thin film diode (8) between a data line (12) and a drive electrode (13), which is free from breakage in an upper layer film (4), is formed on one inner surface of a glass substrate (1) sealing a liquid crystal of a liquid crystal display device. To form... | 08/18/1998 |
| 5780343 | Method of producing high quality silicon surface for selective epitaxial growth of silicon A method of producing a high quality silicon surface prior to carrying out a selective epitaxial growth of silicon process for forming an active device region on a substrate. The process flow of the present invention eliminates the need for the sacrificia... | 07/14/1998 |
| 5773874 | Semiconductor device having a mesa structure for surface voltage breakdown A semiconductor device comprises a monocrystalline silicon wafer having a major surface lying in the crystal plane. Disposed on the surface is a mesa having a generally square cross-section with generally rounded corners. The mesa has four main side... | 06/30/1998 |
| 5747872 | Fast power diode A fast power diode with a soft switching-time response for use in a commutating branch containing a switchable semiconductor component is formed by at least three successive diffusions with p and n dopants and the heavy metal platinum, and for final incor... | 05/05/1998 |
| 5744822 | Semiconductor device/circuit having at least partially crystallized semiconductor layer Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (C... | 04/28/1998 |
| 5688714 | Method of fabricating a semiconductor device having a top layer and base layer joined by wafer bonding A method is set forth of manufacturing a silicon body (5) having an n-type top layer (1') and an adjoining, more highly doped n-type base layer (2'), by which a first, n-type silicon slice (1) and a second, more highly doped n-type silicon slice (2) are p... | 11/18/1997 |
| 5629544 | Semiconductor diode with silicide films and trench isolation The invention comprises a diode in a well having trench isolation that has an edge. Both the well contact of the diode and the rectifying contact of the diode are silicided, but the silicide on the rectifying contact is spaced from the trench isolation ed... | 05/13/1997 |
| 5614421 | Method of fabricating junction termination extension structure for high-voltage diode devices A method of fabricating high-voltage diode device on a silicon substrate which includes a first region and a second region is provided. The first and second regions having a first contact and a second contact area respectively. First, a first protective l... | 03/25/1997 |
| 5589694 | Semiconductor device having a thin film transistor and thin film diode Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (C... | 12/31/1996 |
