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Method and apparatus for making a drink hop along a bar or counter
A method for generating a drink which appears to hop from a remote spot on the bar or counter and take one or more leaps, before landing in a patron's glass.
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| Number | Title | Issue Date |
| 7429789 | Fluoropolymer dielectric composition for use in circuitized substrates and circuitized substrate including same A dielectric composition for forming a dielectric layer usable in circuitized substrates such as PCBs, chip carriers and the like, the composition including at least two fluoropolymers and two inorganic fillers. A circuitized substrate including at least one such di... | 09/30/2008 |
| 7422975 | Composite inter-level dielectric structure for an integrated circuit A method is provided for making an inter-level dielectric for a microelectronic device formed on a substrate. The method begins by forming first and second spacer layers over a substrate layer. The spacer layers are formed from a sacrificial dielectric material. Nex... | 09/09/2008 |
| 7413998 | Biased pulse DC reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed... | 08/19/2008 |
| 7411275 | Semiconductor device comprising an inorganic insulating film and method of manufacturing the same It is an object to provide an insulating film having a very low dielectric constant and a great mechanical strength. Moreover, it is another object to provide a semiconductor device capable of reducing both a capacity between wiring layers and a capacity between wir... | 08/12/2008 |
| 7385276 | Semiconductor device, and method for manufacturing the same The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure having a pore ratio of 50% or higher. ... | 06/10/2008 |
| 7368173 | Siloxane resin-based anti-reflective coating composition having high wet etch rate Herein we disclose a composition, comprising a siloxane resin having the formula (HSiO3/2)a. (SiO4/2)b(HSiX3/2)c(SiX4/2)d, wherein each X is independently —O—, —OH, or —O... | 05/06/2008 |
| 7345000 | Method and system for treating a dielectric film A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), ... | 03/18/2008 |
| 7345351 | Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device... | 03/18/2008 |
| 7335585 | Method for preventing the formation of a void in a bottom anti-reflective coating filling a via hole A method for manufacturing a semiconductor device which, on performing a via first Dual Damascene process, inhibits or prevents the formation of a void in a bottom anti-reflective coating filling a via hole. The method typically includes the steps of forming a botto... | 02/26/2008 |
| 7332446 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. S... | 02/19/2008 |
| 7294909 | Electronic package repair process A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and th... | 11/13/2007 |
| 7294585 | Compositions for preparing low dielectric materials Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention... | 11/13/2007 |
| 7273821 | Method for producing a porous coating The present invention relates to a process for producing a porous layer adhering to a substrate, which comprises the steps: a. preparation of a composition comprising an organic polymer constituent and an inorganic-organic constituent and/or an inorgani... | 09/25/2007 |
| 7265062 | Ionic additives for extreme low dielectric constant chemical formulations A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an a... | 09/04/2007 |
| 7265061 | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film leaving a porous dielectric ... | 09/04/2007 |
| 7256146 | Method of forming a ceramic diffusion barrier layer The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz... | 08/14/2007 |
| 7241691 | Conducting metal oxide with additive as p-MOS device electrode Methods for fabricating high work function p-MOS device metal electrodes are provided. In one embodiment, a method is provided for producing a metal electrode including the steps of: providing a high k dielectric stack with an exposed surface; contacting the exposed... | 07/10/2007 |
| 7239018 | Composition for forming a porous film prepared by hydrolysis and condensation of an alkoxysilane using a trialkylmethylammonium hydroxide catalyst Provided is a composition formed by hydrolysis and condensation composition of the alkoxysilane, the composition comprising a reduced amount of metallic and halogen impurities and being applicable as electronic material. Also provided is an insulating film having lo... | 07/03/2007 |
| 7229933 | Embossing processes for substrate imprinting, structures made thereby, and polymers used therefor A mounting substrate includes an imprinted structure on one side for containing electrical bumps. The imprinted structure is imprinted and also cured under conditions that allow retention of significant features of the cured polymer film. A chip package is also made... | 06/12/2007 |
| 7223705 | Ambient gas treatment of porous dielectric A method of modifying the porosity of a thickness of a layer of porous dielectric material having a surface and formed on a semiconductor substrate is provided by exposing the porous dielectric material to a sufficient temperature in the presence of a first gas to d... | 05/29/2007 |
| 7220684 | Semiconductor device and method of manufacturing the same There is included an inorganic insulating film having a porous structure including a cylindrical vacancy oriented in parallel with the surface of a substrate subjected to a hydrophilic treatment or a hydrophobic treatment. ... | 05/22/2007 |
| 7208389 | Method of porogen removal from porous low-k films using UV radiation Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods usi... | 04/24/2007 |
| 7176144 | Plasma detemplating and silanol capping of porous dielectric films Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping ... | 02/13/2007 |
| 7169716 | Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which s... | 01/30/2007 |
| 7122880 | Compositions for preparing low dielectric materials Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention... | 10/17/2006 |
| 7075187 | Coating material over electrodes to support organic synthesis There is disclosed a coating material formulation for layering a plurality of electrodes to provide a substrate for the electrochemical synthesis of organic oligomers. Specifically, there is disclosed a coating layer of from about 0.5 to about 100 microns thick and ... | 07/11/2006 |
| 6899857 | Method for forming a region of low dielectric constant nanoporous material using a microemulsion technique A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of preparing a microemulsion. The method of the present embodiment then recites applying the microemulsion to a surface... | 05/31/2005 |
| 6703324 | Mechanically reinforced highly porous low dielectric constant films A porous medium, such as a low dielectric constant film, can be made into an aggregate material to provide increased mechanical strength on a temporary basis. This can be achieved by, for example, a permeable modification treatment of the porous medium. B... | 03/09/2004 |
| 6699797 | Method of fabrication of low dielectric constant porous metal silicate films The present provides a method for forming a porous metal silicate dielectric layer having a dielectric constant of less than 2.0. The porous metal silicate dielectric formed by embodiments of the present invention is suitable for integration into the micr... | 03/02/2004 |
| 6670285 | Nitrogen-containing polymers as porogens in the preparation of highly porous, low dielectric constant materials Dielectric compositions comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The compositions are useful in the manufacture of electronic devices such as integrated circuit devices and integrate... | 12/30/2003 |
| 6670022 | Nanoporous dielectric films with graded density and process for making such films The present invention relates to nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing pol... | 12/30/2003 |
| 6667147 | Electronic device manufacture Disclosed are methods of manufacturing electronic devices, particularly integrated circuits. Such methods include the use of low dielectric constant material prepared by using a removable porogen material.... | 12/23/2003 |
| 6667249 | Minimizing coating defects in low dielectric constant films A method of coating a low dielectric constant material layer wherein the wafer surface is pre-wetted using a solvent to prevent or reduce coating defects is described. A semiconductor substrate is provided wherein a top surface of the semiconductor substr... | 12/23/2003 |
| 6663793 | Sol-gel-based composite materials for direct-write electronics applications The present invention relates to a method for producing a low temperature 0-3 composite material, comprising the steps of providing a mixture, wherein the mixture comprises a liquid phase and a particulate phase and wherein the liquid phase comprises a re... | 12/16/2003 |
| 6656527 | Method and device for producing aerogels A method of producing an aerogel layer on a substrate is described. A precursor mixture is provided by mixing at least one material selected from the group consisting of silicates, metal alcolates, aluminates and borates with a solvent. The precursor mixt... | 12/02/2003 |
| 6653718 | Dielectric films for narrow gap-fill applications A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallo... | 11/25/2003 |
| 6642157 | Film forming method and semiconductor device There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.... | 11/04/2003 |
| 6632748 | Composition for preparing substances having nano-pores The present invention provides a composition for preparing substances having nano-pores, said composition comprising cyclodextrin derivative, thermo-stable organic or inorganic matrix precursor, and solvent for dissolving said two solid components. There ... | 10/14/2003 |
| 6630696 | Silica zeolite low-k dielectric thin films Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2... | 10/07/2003 |
| 6627549 | Methods for making nearly planar dielectric films in integrated circuits In the fabrication of integrated circuits, one specific technique for making surfaces flat is chemical-mechanical planarization. However, this technique is quite time consuming and expensive, particularly as applied to the numerous intermetal dielectric l... | 09/30/2003 |
