Did You Know...
...During the Civil War, the Confederacy established its own Patent Office which issued 266 patents, a third of which concerned implements of war.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7427559 | Method of reducing the surface roughness of spin coated polymer films According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer ... | 09/23/2008 |
| 7326653 | Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained A method for preparing an organic electronic or optoelectronic device is described. The method comprises depositing a layer of fluorinated polymer on a substrate, patterning the layer of fluorinated polymer to form a relief pattern and depositing from solution a lay... | 02/05/2008 |
| 7288488 | Method for resist strip in presence of regular low k and/or porous low k dielectric materials A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric ma... | 10/30/2007 |
| 7253110 | Method and apparatus for forming a barrier metal layer in semiconductor devices A method and apparatus for forming a barrier metal layer in semiconductor devices are disclosed. A disclosed method for forming a barrier metal layer in a semiconductor device forms an interlayer insulating layer on a front face of a semiconductor substrate having a... | 08/07/2007 |
| 7238626 | Chemically and electrically stabilized polymer films A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacu... | 07/03/2007 |
| 6699531 | Plasma treatment method In a case where a CF film is used as an interlayer dielectric film for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e.g., about 400 to 450° C. At this time, a F gas is released from the CF film, ... | 03/02/2004 |
| 6699798 | Promoting adhesion of fluoropolymer films to semiconductor substrates Adhesion of high fluorine content films to semiconductor substrates may be improved by forming an intervening adherence layer. The adherence layer may be formed from a plasma gas. In some cases, the adherence layer may be used to adhere photoresist for ad... | 03/02/2004 |
| 6699784 | Method for depositing a low k dielectric film (K>3.5) for hard mask application A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a proces... | 03/02/2004 |
| 6663973 | Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepa... | 12/16/2003 |
| 6645881 | Method of forming coating film, method of manufacturing semiconductor device and coating solution A coating solution for used in a scan coating method contains a low vapor pressure solvent having a vapor pressure lower than 1 Torr (133.322 Pa) at room temperature.... | 11/11/2003 |
| 6630396 | Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon A plasma enhanced chemical vapor deposition (PECVD) process is provided for depositing one or more dielectric material layers on a substrate for use in interconnect structures of integrated circuits. The method comprises the steps of depositing a fluorina... | 10/07/2003 |
| 6624063 | Semiconductor device having low dielectric layer and method of manufacturing thereof A semiconductor device including a semiconductor substrate, an insulating layer formed on the substrate, a dielectric organic layer formed on the insulating layer and having a dielectric constant of not more than 3.0, and an interconnection layer in conta... | 09/23/2003 |
| 6593650 | Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials A low dielectric constant material having a first fluorine concentration in a near-surface portion and a second fluorine concentration in an interior portion provides an insulator suitable for use in integrated circuits. In a further aspect of the present... | 07/15/2003 |
| 6593246 | Process for producing semiconductor device A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level dielectric between the wirings to decrease a wiring capaci... | 07/15/2003 |
| 6589862 | Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices The invention relates to cured dielectric films and a process for their manufacture which are useful in the production of integrated circuits. Dual layered dielectric films are produced in which a lower layer comprises a non-silicon containing organic pol... | 07/08/2003 |
| 6576569 | Method of plasma-assisted film deposition This invention includes: a plasma-making step of making into plasma a film-forming gas including a compound of carbon and fluorine and an etching gas which can etch a film of fluorine-added carbon; and a film-forming step of forming a film of fluorine-add... | 06/10/2003 |
| 6558756 | Method of forming interlayer insulating film A material containing, as a main component, an organic silicon compound represented by the following general formula: R1x Si(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl ... | 05/06/2003 |
| 6544901 | Plasma thin-film deposition method As thin-film deposition gases, cyclic C5 F8 gas and a hydrocarbon gas, e.g., C2 H4 gas, are used. These gases are activated as plasma under a pressure of, e.g., 0.1 Torr, to deposit a CF film on a semiconductor ... | 04/08/2003 |
| 6537904 | Method for manufacturing a semiconductor device having a fluorine containing carbon inter-layer dielectric film When a semiconductor device using fluorine-containing carbon films (CF films) 21, 22, 23 as inter-layer dielectric films is fabricated using boron nitride films (BN films) as hard masks 31, 32, 33, total inter-wiring capacitance of the semiconductor devic... | 03/25/2003 |
| 6534616 | Precursors for making low dielectric constant materials with improved thermal stability Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp2 C--F and some hyperconjugated sp3 C--F bonds are disclosed in this inventi... | 03/18/2003 |
| 6531409 | Fluorine containing carbon film and method for depositing same Since there are some cases where a CF film used as an interlayer dielectric film of a semiconductor device has a leak current which is too high to obtain required characteristics, it is required to decrease the leak current of the CF film. Ar gas is used ... | 03/11/2003 |
| 6514878 | Method of fabricating a semiconductor device having a multilayered interconnection structure A method of forming a semiconductor device by forming a first interlayer insulation film on a substrate, forming a second, organic interlayer insulation film on the first interlayer insulation film, forming a first etching stopper film on the second inter... | 02/04/2003 |
| 6509259 | Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices The invention relates to cured dielectric films and a process for their manufacture which are useful in the production of integrated circuits. Dual layered dielectric films are produced in which a lower layer comprises a non-silicon containing organic pol... | 01/21/2003 |
| 6479897 | Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same A semiconductor device has a dielectric film made of a fluorine-added carbon film formed on a substrate, a metallic layer formed on the fluorine-added carbon film and an adhesive layer formed between the dielectric film and the metallic layer. The adhesiv... | 11/12/2002 |
| 6479401 | Method of forming a dual-layer anti-reflective coating A method of forming an anti-reflective coating is described. A film is formed on a substrate. A first layer of an anti-reflective coating layer Is deposited on the film by chemical vapor deposition using a canrier gas, an organic halide gas and a hydrogen... | 11/12/2002 |
| 6468603 | Plasma film forming method utilizing varying bias electric power This invention is a method of: making a film-forming gas including a compound gas of carbon and fluorine into plasma in a vacuum container 2 including a stage 4 for an object to be processed 10; and applying a bias electric power to the stage 4 in order t... | 10/22/2002 |
| 6455934 | Polymeric dielectric layers having low dielectric constants and improved adhesion to metal lines A thermally stable inter-metal dielectric for interlayer dielectric material has enhanced adhesiveness by introduction of an adhesive material. The adhesive material may reside only at the interface of the inter-metal dielectric or interlayer dielectric w... | 09/24/2002 |
| 6448655 | Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorin... | 09/10/2002 |
| 6440878 | Method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer A plasma enhanced chemical vapor deposition (PECVD) process is provided for depositing one or more dielectric material layers on a substrate for use in interconnect structures of integrated circuits. The method comprises the steps of depositing a fluorina... | 08/27/2002 |
| 6429518 | Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO2, etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition g... | 08/06/2002 |
| 6419985 | Method for producing insulator film A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure is disclosed. An inert plasma producing gas, such as argon, is introduced into a vacuum vessel along... | 07/16/2002 |
| 6355902 | Plasma film forming method and plasma film forming apparatus Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film for... | 03/12/2002 |
| 6352937 | Method for stripping organic based film There is provided a method used for processing an organic low dielectric constant insulating film to a desired shape for enabling facilitated stripping of an organic film formed on top of the organic low dielectric constant insulating film. Specifically, ... | 03/05/2002 |
| 6337290 | Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same A semiconductor device has a dielectric film made of a fluorine-added carbon film formed on a substrate, a metallic layer formed on the fluorine-added carbon film and an adhesive layer formed between the dielectric film and the metallic layer. The adhesiv... | 01/08/2002 |
| 6337519 | Semiconductor device having a multilayered interconnection structure A semiconductor device has a multilayer interconnection structure including a lower organic interlayer insulation film, an etching stopper film on the lower interlayer insulation film and an upper organic interlayer insulation film covering the etching st... | 01/08/2002 |
| 6331485 | Method of producing semiconductor device A method for producing semiconductor device for reducing a gas of halogenated product of a group IVB element with H2 by the ECR plasma CVD method to form a thin film of the group IVB element on a substrate is disclosed. This method includes for... | 12/18/2001 |
| 6303524 | High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques A method for curing low k dielectric materials uses very short, relatively high temperature cycles instead of the conventionally used (lower temperature/longer time) thermal cycles. A substrate, such as a semiconductor wafer, coated with a layer of coatin... | 10/16/2001 |
| 6265779 | Method and material for integration of fuorine-containing low-k dielectrics Metal and insulator interconnect structures are described incorporating one or more layers of fluorinated dielectric insulation, one or more conductive wiring levels interconnected by vias and capping and/or liner materials to physically isolate the wirin... | 07/24/2001 |
| 6258407 | Precursors for making low dielectric constant materials with improved thermal stability Fluorinated chemical precursors, methods of manufacture, polymer thin filmswith low dielectric constants, and integrated circuits comprising primarily of sp2 C--F and some hyperconjugated sp3 C--F bonds are disclosed in this inventio... | 07/10/2001 |
| 6225240 | Rapid acceleration methods for global planarization of spin-on films This invention describes improved apparatus and methods for spin-on deposition of semiconductor thin films. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods compr... | 05/01/2001 |
