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| Number | Title | Issue Date |
| 7439154 | Method of fabricating interconnect structure A method for fabricating an interconnect structure is described. A substrate with a conductive part thereon is provided, a first porous low-k layer is formed on the substrate, and then a first UV-curing step is conducted. A damascene structure is formed in the first... | 10/21/2008 |
| 7396748 | Semiconductor device includes gate insulating film having a high dielectric constant A semiconductor device comprising a semiconductor substrate and a MOSFET provided on the semiconductor substrate, the MOSFET including a gate insulating film and a gate electrode provided on the gate insulating film, wherein the gate insulating film has a higher die... | 07/08/2008 |
| 7352000 | Organic thin film transistor with polymeric interface Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated cir... | 04/01/2008 |
| 7352053 | Insulating layer having decreased dielectric constant and increased hardness A method of manufacturing a mechanically robust insulating layer, including forming a low-k dielectric layer having a first dielectric constant on a substrate and forming a carbon nitride cap layer on the low-k dielectric layer, the insulating layer thereby having a... | 04/01/2008 |
| 7335990 | Process of forming a composite diffusion barrier in copper/organic low-k damascene technology A semiconductor device, having a composite barrier layer, comprising the following. A substrate has a dielectric layer formed thereover and having an opening within the dielectric layer. The opening exposes a first portion of the substrate. A composite barrier layer... | 02/26/2008 |
| 7238627 | Organosilicate polymer and insulating film therefrom Provided is a process for manufacturing an insulating film for a semiconductor device. The process includes preparing a composition for forming an insulating film, wherein the composition comprises a) an organosilicate polymer and b) an organic solvent. The composit... | 07/03/2007 |
| 6673725 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plas... | 01/06/2004 |
| 6669858 | Integrated low k dielectrics and etch stops A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in depos... | 12/30/2003 |
| 6664199 | Coating liquid for forming a silica group coating film having a small dielectric constant A coating liquid for forming a silica group coating film having a dielectric constant equal to or less than 3.2, comprises a condensation product which is obtained through hydrolysis of trialkoxysilane within an organic solvent under an acid catalysis; an... | 12/16/2003 |
| 6663973 | Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepa... | 12/16/2003 |
| 6660391 | Low .kappa. dielectric inorganic/organic hybrid films and method of making A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the fil... | 12/09/2003 |
| 6653719 | Silicone polymer insulation film on semiconductor substrate A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has --SiR2 O-- repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor subst... | 11/25/2003 |
| 6649534 | Methods for processing a coating film and for manufacturing a semiconductor element According to the present invention, there is provided a method for processing a coating film, including the steps of forming a silica group coating film having a low dielectric constant on a substrate, etching the silica group coating film through a resis... | 11/18/2003 |
| 6649540 | Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surfa... | 11/18/2003 |
| 6649219 | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes containing one or more organofluoro silanes having the formula SiR1 R | 11/18/2003 |
| 6627533 | Method of manufacturing an insulation film in a semiconductor device A method of manufacturing an insulating film in a semiconductor device is disclosed. The method comprises the steps of forming a SOD film on the entire structure to fill any distance between conductive layer patterns and after performing a curing process,... | 09/30/2003 |
| 6613834 | Low dielectric constant film material, film and semiconductor device using such material A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a ... | 09/02/2003 |
| 6583048 | Organosilicon precursors for interlayer dielectric films with low dielectric constants A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl e... | 06/24/2003 |
| 6559520 | Siloxan polymer film on semiconductor substrate A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has --SiR2 O-- repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistan... | 05/06/2003 |
| 6517911 | Process for the formation of silicon oxide films There is provided a process for forming a silicon oxide film which is useful as an electrical insulating film, dielectric film or protective film as used in LSI, thin-film transistor, photoelectric converter, photosensitive body and the like. The process ... | 02/11/2003 |
| 6514880 | Siloxan polymer film on semiconductor substrate and method for forming same A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has --SiR2 O-- repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistan... | 02/04/2003 |
| 6514857 | Damascene structure fabricated using a layer of silicon-based photoresist material A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single... | 02/04/2003 |
| 6514878 | Method of fabricating a semiconductor device having a multilayered interconnection structure A method of forming a semiconductor device by forming a first interlayer insulation film on a substrate, forming a second, organic interlayer insulation film on the first interlayer insulation film, forming a first etching stopper film on the second inter... | 02/04/2003 |
| 6509386 | Porous insulating compounds and method for making same A method of forming a porous insulating composition comprising the steps of (A) providing at least one organic sacrificial material/dielectric material composition comprising at least one organic sacrificial material and at least one dielectric material; ... | 01/21/2003 |
| 6500773 | Method of depositing organosilicate layers A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by reacting a gas mixture comprising a phenyl-based alkoxysilane compound. The gas mixture may be reacted by applying an electric field thereto. The gas mixture m... | 12/31/2002 |
| 6475904 | Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques A damascene structure and method of making the same in a low k dielectric material employs an imageable layer in which the damascene pattern is provided. The imageable layer is an alicyclic polymer into which silicon is incorporated by liquid silylation, ... | 11/05/2002 |
| 6455443 | Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of sai... | 09/24/2002 |
| 6455445 | Silicone polymer insulation film on semiconductor substrate and method for forming the film A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has --SiR2 O-- repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor subst... | 09/24/2002 |
| 6451381 | Electrically insulating crosslinked thin-film-forming organic resin composition and method for forming thin film therefrom An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for ... | 09/17/2002 |
| 6414377 | Low k dielectric materials with inherent copper ion migration barrier An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an... | 07/02/2002 |
| 6410463 | Method for forming film with low dielectric constant on semiconductor substrate In a method for forming in a reactor a film having a low relative dielectric constant on a semiconductor substrate by plasma reaction, the improvement can be achieved by lengthening a residence time, Rt, of a reaction gas in the reactor, wherein 100 msecą... | 06/25/2002 |
| 6395649 | Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes Polyorganosilicon dielectric coatings are prepared by subjecting specified polycarbosilanes to thermal or high energy treatments to generate cross-linked polyorganosilicon coatings having low k dielectric properties. The thermal process includes multi-ste... | 05/28/2002 |
| 6383955 | Silicone polymer insulation film on semiconductor substrate and method for forming the film A method for forming a silicone polymer insulation film having a low dielectric constant, high thermal stability, high humidity-resistance, and high O2 plasma resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The fir... | 05/07/2002 |
| 6365320 | Process for forming anti-reflective film for semiconductor fabrication using extremely short wavelength deep ultraviolet photolithography An anti-reflective film for deep ultraviolet (DUV) photolithograghy includes silicon oxime having the formula Si.sub.(1-x+y+z) Nx Oy :H2, wherein x, y, and z represent the atomic percentage of nitrogen, oxygen, and hydroge... | 04/02/2002 |
| 6364953 | Method and apparatus for making aerogel film A method for making an aerogel film includes the steps of performing a gelation reaction of a metal alkoxide on a substrate to prepare a substrate with a wet-gel film, and converting the wet-gel film into an aerogel film by a supercritical or sub-critical... | 04/02/2002 |
| 6361820 | Dielectric films from organohydridosiloxane resins with high organic content A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and 40 mole percent or greater of an organic substituent. The process ... | 03/26/2002 |
| 6358559 | Dielectric films from organohydridosiloxane resins with low organic content A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and up to 40 mole percent of an organic substituent. The process of ma... | 03/19/2002 |
| 6352945 | Silicone polymer insulation film on semiconductor substrate and method for forming the film A method for forming a silicone polymer insulation film having a low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silic... | 03/05/2002 |
| 6340435 | Integrated low K dielectrics and etch stops A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in depos... | 01/22/2002 |
| 6337519 | Semiconductor device having a multilayered interconnection structure A semiconductor device has a multilayer interconnection structure including a lower organic interlayer insulation film, an etching stopper film on the lower interlayer insulation film and an upper organic interlayer insulation film covering the etching st... | 01/08/2002 |
