Class 257/E21.251 - By chemical means (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.25. This subclass
No. of patents: 381
Last issue date: 09/23/2008

«First «Previous1 2 3 4 5 6 7 8 9 10 Next»Last»

Number	Title	Issue Date
7427545	Trench memory cells with buried isolation collars, and methods of fabricating same The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar. The trench capacitor is located in a trench in a semiconductor substrat...	09/23/2008
7378355	System and methods for polishing a wafer In methods for smoothing or polishing a surface of a wafer, such as a silicon wafer, a liquid layer is formed on a surface of the wafer. The liquid layer may be an invisible microscopic layer, or a visible macroscopic layer. A flow of an oxidizing gas is directed ov...	05/27/2008
7361610	Method of etching a glass substrate The present invention discloses an etching apparatus comprising an etching bath having an etchant; an etchant recycling part in the etching bath; a DI and undiluted etchant supply part for supplying a DI water and a undiluted etchant; an etchant mixing part for mixi...	04/22/2008
7358196	Wet chemical treatment to form a thin oxide for high k gate dielectrics Described herein are methods of forming a thin silicon dioxide layer having a thickness of less than eight angstroms on a semiconductor substrate to form the bottom layer of a gate dielectric. A silicon dioxide layer having a thickness of less than eight angstroms m...	04/15/2008
7338910	Method of fabricating semiconductor devices and method of removing a spacer A method of fabricating a semiconductor device is disclosed. The method includes defining an electrode on a semiconductor substrate; forming a spacer on at least one sidewall of the electrode; performing a process operation on the semiconductor substrate using the s...	03/04/2008
7309658	Molecular self-assembly in substrate processing Systems and methods for molecular self-assembly are provided. The molecular self-assembly receives a substrate that includes one or more regions of dielectric material. A molecularly self-assembled layer is formed on an exposed surface of the dielectric material. Th...	12/18/2007
7151058	Etchant for etching nitride and method for removing a nitride layer using the same In a method for removing a nitride layer of a semiconductor device, an etchant including about 15 to about 40 percent by volume of hydrofluoric acid, about 15 to about 60 percent by volume of phosphorous acid, and about 25 to about 45 percent by volume of deionized ...	12/19/2006
7132683	Dual purpose test structure for gate-body current measurement in PD/SOI and for direct extraction of physical gate length in scaled CMOS technologies A structure, for testing relative to an MOS transistor, closely resembles the MOS transistor of interest. For example, certain dimensions and a number of dopant concentrations typically are substantially the same in the test structure as found in corresponding eleme...	11/07/2006
6996147	Methods of fabricating nanostructures and nanowires and devices fabricated therefrom One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline ...	02/07/2006
6887796	Method of wet etching a silicon and nitrogen containing material The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous sol...	05/03/2005
6703270	Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device comprises the steps of: forming a patterned masking layer (3) of insulating material at a surface (2) of a semiconductor body (1), etching the semiconductor body (1) through the patterned masking layer (3) ...	03/09/2004
6703278	Method of forming layers of oxide on a surface of a substrate A method of forming oxide layers of different thickness on a substrate is described, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method allows to form very thin, high quality oxide layers with a red...	03/09/2004
6699400	Etch process and apparatus therefor In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon...	03/02/2004
6692580	Method of cleaning a dual damascene structure A method of cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer, exposing the first metal la...	02/17/2004
6693047	Method for recycling semiconductor wafers having carbon doped low-k dielectric layers A method for removing at least one carbon doped oxide layer over a surface to recycle the semiconductor process wafer including providing a semiconductor wafer including a process surface including at least one carbon doped silicon oxide layer; oxidizing ...	02/17/2004
6692976	Post-etch cleaning treatment The present disclosure relates to a post-etch cleaning treatment for a semiconductor device such as a FeRAM. The treatment comprises providing an etchant comprising both a fluorine compound and a chlorine compound, and applying the etchant to the semicond...	02/17/2004
6693020	Method of preparing copper metallization die for wirebonding A method of preparing a semiconductor wafer having a integrated circuits formed on it that have pads formed of copper includes the steps of removing oxide from the copper pads and then the vacuum packing the wafer in a shock-proof container. The oxide may...	02/17/2004
6690084	Semiconductor device including insulation film and fabrication method thereof A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implant...	02/10/2004
6689696	Method for manufacturing semiconductor device employing dielectric layer used to form conductive layer into three dimensional shape A method for manufacturing a semiconductor device employing a dielectric layer for forming a conductive layer into a three-dimensional shape. The dielectric layer is formed on a substrate in such a manner as to provide an intrinsic etch rate within the la...	02/10/2004
6683002	Method to create a copper diffusion deterrent interface Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material....	01/27/2004
6683009	Method for local etching A method is described for local etching of surfaces. The method includes the steps of providing a surface, providing an etchant, and providing a device for supplying and extracting the etchant. The device contains two cylindrical lines of different cross-...	01/27/2004
6673693	Method for forming a trench in a semiconductor substrate A method for forming a trench in a semiconductor substrate includes configuring a mask on the substrate. The mask has a window in which a substrate surface is uncovered. The substrate is electrochemically etched proceeding from the substrate surface. A po...	01/06/2004
6669857	Process for etching bismuth-containing oxide films A process is described for etching oxide films containing at least one bismuth-containing oxide, in particular a ferroelectric bismuth-containing mixed oxide. A substrate onto which at least one oxide film containing at least one bismuth-containing oxide ...	12/30/2003
6667246	Wet-etching method and method for manufacturing semiconductor device A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching....	12/23/2003
6666986	Supercritical etching compositions and method of using same A supercritical etching composition and method for etching an inorganic material of a semiconductor-based substrate are provided. The method includes providing a semiconductor-based substrate having an exposed inorganic material and exposing the substrate...	12/23/2003
6663674	Method of handling a silicon wafer A recycling procedure for 300 mm nitride dummy wafers which have a stabilization layer of silicon dioxide is provided. The recycling procedure is essentially based on selectively wet etching the deposited silicon nitride with respect to the silicon dioxid...	12/16/2003
6664611	Composition and method for cleaning residual debris from semiconductor surfaces A method for removing a dielectric anti-reflective coating (DARC) of silicon oxynitride material from a layer of insulative material which is formed over a substrate in a semiconductor device involves contacting the DARC material with a mixture of tetrame...	12/16/2003
6660655	Method and solution for preparing SEM samples for low-K materials A method and a solution for preparing SEM samples comprising low-K dielectric materials. The process begins by providing a SEM sample comprising low-K dielectric material and silicon oxide material. A solution is formed for preparing (staining and etching...	12/09/2003
6656852	Method for the selective removal of high-k dielectrics One aspect of the invention relates to a method of etching a high-k dielectric. The method involves removing an exposed portion of a high-k dielectric layer from a substrate by wet etching with a solution comprising water, a strong acid, an oxidizing agen...	12/02/2003
6645876	Etching for manufacture of semiconductor devices A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2 SO4 and NH4 F or H2 SO4 and HF as main...	11/11/2003
6638813	Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell A process for forming a composite insulator spacer on the sides of a buried stack capacitor structure, wherein the buried stack capacitor structure is located overlying a portion of an insulator filled, shallow trench isolation (STI) region, has been deve...	10/28/2003
6638445	Silicon dioxide etch process which protects metals The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a...	10/28/2003
6630074	Etching composition and use thereof An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulfuric acid and about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone, and about 0.01 to 100 ppm of hydrofluoric acid is effectiv...	10/07/2003
6627535	Methods and apparatus for forming a film on a substrate This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is kࣘ3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative...	09/30/2003
6617258	Method of forming a gate insulation layer for a semiconductor device by controlling the duration of an etch process, and system for accomplishing same In one illustrative embodiment, the method comprises providing a substrate having a process layer formed thereabove, performing a wet etching process comprised of a duration parameter on the process layer to reduce a thickness of the process layer, and ad...	09/09/2003
6613636	Method for fabricating semiconductor device On the sides of a gate electrode, layered-film sidewalls are formed which includes a first oxide film such as an NSG film or a TEOS film and a second oxide film such as a BPSG film or a PSG film. After the layered-film sidewalls are used as a mask for for...	09/02/2003
6613693	Etchant used in the manufacture of semiconductor devices and etching method using the same A nitride film etchant used in the manufacture semiconductor devices, and an etching method using the etchant, are provided. A wafer having a nitride film formed thereon is introduced into a bathing tube containing an etchant which is a water solution con...	09/02/2003
6610601	Bond pad and wire bond A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad sur...	08/26/2003
6599792	Semiconductor device and method for manufacturing the same A semiconductor device and a method for manufacturing the same, wherein a gate electrode structure is formed on a surface of a semiconductor substrate. Next, a gate poly oxide (GPOX) layer is deposited on a surface of the gate electrode structure and on t...	07/29/2003
6599814	Method for removal of sic The present invention is related to a method for removal of silicon carbide layers and in particular amorphous SiC of a substrate. Initially, the exposed part of a carbide-silicon layer is at least partly converted into an oxide-silicon layer by exposing ...	07/29/2003

«First «Previous1 2 3 4 5 6 7 8 9 10 Next»Last»

PatentStorm

Bizarre Patents

PatentStorm News

Class 257/E21.251 - By chemical means (EPO)