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| Number | Title | Issue Date |
| 7410901 | Submicron device fabrication A method for fabricating substrate material to include trenches and unreleased beams with submicron dimensions includes etching a first oxide layer on the substrate to define a first set of voids in the first oxide layer to expose the substrate. A second oxide layer... | 08/12/2008 |
| 7407824 | Guard ring for improved matching A semiconductor manufacturing method comprises forming a leveling guard ring defining an interior area into which are fabricated one or more devices. In certain embodiments two or more matched devices, such as in a common centroid layout, are fabricated in the inter... | 08/05/2008 |
| 7407890 | Patterning sub-lithographic features with variable widths A method of processing a substrate of a device comprises the as following steps. Form a cap layer over the substrate. Form a dummy layer over the cap layer, the cap layer having a top surface. Etch the dummy layer forming patterned dummy elements of variable widths ... | 08/05/2008 |
| 7402534 | Pretreatment processes within a batch ALD reactor Embodiments of the invention provide methods for forming a material on a substrate which includes exposing a plurality of substrates within a batch process chamber to a first oxidizing gas during a pretreatment process, exposing the substrates sequentially to a prec... | 07/22/2008 |
| 7386182 | Optimization of multiple feature lithography According to one embodiment of the invention, a method for enhancing multiple feature lithography is provided. The method includes generating a plurality of maps each associated with a particular one of a plurality of circuit features. Each map maps an illumination ... | 06/10/2008 |
| 7384878 | Method for applying a layer to a hydrophobic surface A method of forming a coating. The method includes: providing a substrate having a surface; forming a layer of water on the surface; and forming a layer of a material on the layer of water. ... | 06/10/2008 |
| 7368381 | Methods of forming materials The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor ... | 05/06/2008 |
| 7312138 | Semiconductor device and method of manufacture thereof A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode i... | 12/25/2007 |
| 7253012 | Guard ring for improved matching A semiconductor manufacturing method comprises forming a leveling guard ring defining an interior area into which are fabricated one or more devices. In certain aspects, two or more matched devices, such as in a common centroid layout, are fabricated in the interior... | 08/07/2007 |
| 7199012 | Method of forming a trench in a semiconductor device A method for forming a trench in a semiconductor device is disclosed. An example method forms a pad oxide film and a silicon nitride film on a semiconductor substrate, selectively etches the silicon nitride film and the pad oxide film on a region to be formed with a... | 04/03/2007 |
| 7153785 | Method of producing annealed wafer and annealed wafer The present invention provides method of producing an annealed wafer wherein a silicon single crystal wafer produced by the Czochralski (CZ) method is subjected to a high temperature annealing in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereo... | 12/26/2006 |
| 7141515 | Method for manufacturing device A method for manufacturing a device where an improvement of etching accuracy and curtailing of manufacturing costs are realized when a device is manufactured attended with etching, such as RIE, in which a device; i.e., an object of etching, evolves heat. The ... | 11/28/2006 |
| 6627556 | Method of chemically altering a silicon surface and associated electrical devices A method of chemically altering a silicon surface and associated dielectric materials are disclosed.... | 09/30/2003 |
| 6465054 | Process for coating surfaces The invention concerns a process for coating a metallic or semimetallic surface in which coating molecules containing reactive groups are bound covalently to the surface by irradiation with light and it also concerns a structured coated surface.... | 10/15/2002 |
| 6013937 | Buffer layer for improving control of layer thickness A pad layer disposed on a semiconductor substrate 102 and a buffer layer 108 disposed within the pad layer such that the pad layer is divided into a dielectric layer 106 below the buffer layer and a mask layer 110 above the buffer layer. A method of formi... | 01/11/2000 |
| 5847464 | Method for forming controlled voids in interlevel dielectric A method of forming a thick interlevel dielectric layer containing sealed voids formed in a controlled manner, over a substantially planar surface in semiconductor device structure, and the semiconductor structure formed according to such a method. The se... | 12/08/1998 |
| 5504040 | Planarized material layer deposition using condensed-phase processing A method and system form a globally planar material layer (44) on a semiconductor wafer (32). The method and system consist of a chuck (58) and a chiller (56) to cool down semiconductor wafer (32) to a predetermined temperature in order to condense multip... | 04/02/1996 |
| 4990993 | Resin-molded semiconductor device using polymide and nitride films for the passivation film Herein disclosed is a semiconductor device having a semiconductor element, which is constructed to include a bonding pad for the semiconductor element formed selectively on one main side of a semiconductor layer, with a nitride film so formed on the main ... | 02/05/1991 |
| 4733289 | Resin-molded semiconductor device using polyimide and nitride films for the passivation film Herein disclosed is a semiconductor device having a semiconductor element, which is constructed to include a bonding pad for the semiconductor element formed selectively on one main side of a semiconductor layer, with a nitride film so formed on the main ... | 03/22/1988 |
| 4627991 | Method for forming a protective film on a semiconductor body In the representative embodiment of the invention described in the specification, a boron coating is applied to a semiconductor body having a protective film of a compound of the semiconductor material by heating the semiconductor body to a temperature be... | 12/09/1986 |
| 4542400 | Semiconductor device with multi-layered structure A semiconductor device comprising a substrate means, a semiconductor layer of an N conductivity type formed on the substrate means, a first semiconductor region of a P conductivity type formed in the semiconductor layer and having its exposed major surfac... | 09/17/1985 |
| 4438551 | Locking device for vehicle seat belt webbing Disclosed herein is a locking device for vehicle seat belt webbing. The device includes a fixed clamp member; a swing clamp displaceable relative to the clamp member between two positions, and a drum displaceable relative to the swing clamp between two po... | 03/27/1984 |
| 4435443 | Method for forming a protecting film on side walls of a semiconductor device A method for forming a protecting film on the side walls of a semiconductor device, e.g. a semiconductor laser, having an exposed PN junction at the side walls thereof is carried out by the following steps. The semiconductor device is placed on a substrat... | 03/06/1984 |
| 4412906 | Sputtering apparatus A sputtering apparatus includes a target and a substrate holder respectively supported in a lower portion and an upper portion of a vacuum chamber, a gas jet opening located near the upper surface of the target, and gas withdrawal conduits located near th... | 11/01/1983 |
| 4356210 | Method for forming a protecting film on side walls of a semiconductor device A method for forming a protecting film on the side walls of a semiconductor device having an exposed PN junction at the side walls, e.g. a semiconductor laser, involves placing the device on a substrate target made of a protecting film material. Energetic... | 10/26/1982 |
| 4292153 | Method for processing substrate materials by means of plasma treatment A method for processing substrate materials by uniform plasma treatment, including the steps of mounting substrate materials onto a series of electrode plates arranged in parallel, alternately connecting the electrode plates to a pair of bus lines, applyi... | 09/29/1981 |
| 4078945 | Anti-reflective coating for silicon solar cells An anti-reflective coating is formed integrally with a silicon solar cell by treating the cell with an acidic solution comprising a mixture of HF and H2 O2.... | 03/14/1978 |
