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Patent No. 6060700

Microwave Oven With Removable Storage Cassette in Dashboard of Motor Vehicle

A microwave oven adapted for use within a motor vehicle dashboard area. The microwave oven has a removable storage cassette, and slidable platforms for securing and serving containers of beverages and foods.

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Class 257/E21.239 - Using abrasion, e.g., sand-blasting (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.237. This
No. of patents: 17
Last issue date: 05/13/2008


NumberTitleIssue Date
7371685Low stress barrier layer removal
Apparatus and methods of fabricating an interconnect in a dielectric material, such as by a damascene or dual damascene processes. In specific, with the use of a barrier layer, such as to contain copper-containing materials used in the fabrication of the interconnec...
05/13/2008
6582280Sandblasting agent, wafer treated with the same, and method of treatment with the same
A silicon wafer is sand blasted using a sand blasting abrasive material containing a chelating agent which is selected from the group consisting of, for example, the following compounds (1) to (4) and salts thereof: (1) Nitrilotriacetic acid (NTA) (2) Ethylene...
06/24/2003
6508693Method of manufacturing a semiconductor device
The invention relates to the manufacture of semiconductor elements (10), in which manufacturing process a part (50) of a semiconductor body (11) having a silicon substrate (32) from which the semiconductor elements (10) are formed is removed by means of p...
01/21/2003
6276992Method of forming a groove in a surface of a mother substrate
A method of forming a groove on a mother material substrate includes the steps of forming a first layer on a surface of the mother material substrate, the first layer including a chain-polymer material which is soluble in an organic solvent. Then a second...
08/21/2001
5747385Method of planarizing interlayer dielectric
A method of planarizing an interlayer dielectric layer in a semiconductor integrated circuit device is provided, which method can remove remaining parts of the dielectric layer without removing the surface of the layer itself at a high throughput. After a...
05/05/1998
5401690Method for making circular diode chips through glass passivation
A method for making circular diode chips which includes procedures of coating a diffused wafer with a photoresister coating and exposing it to develop the pattern; groove etching with an acid solution; removing the photoresister coating and cleaning it wi...
03/28/1995
5348893Method for treatment of semiconductor wafer
A method for the impartation of a mechanical distortion to a semiconductor wafer by the collision of particles against the surface of the semiconductor wafer is disclosed which represses the pollution of the semiconductor wafer with impurities from the pa...
09/20/1994
5132769Semiconductor device with high withstand voltage
A semiconductor device has PN junction in architecture of PN- N+, P+ NN+, PIN, or PγN. Such semiconductor device comprises a first surface layer dopped with a first type impurity at a predetermined first concen...
07/21/1992
5051375Method of producing semiconductor wafer through gettering using spherical abrasives
Disclosed is a method of producing a semiconductor wafer through gettering by means of sand blasting in a semiconductor wafer fabrication process. The method includes blasting abrasives each having a configuration at least similar to a sphere against a ba...
09/24/1991
4782029Method of gettering semiconductor wafers with an excimer laser beam
A gettering method has a step in which the back surface of a semiconductor substrate having the upper surface on which semiconductor device elements is to be formed, with a laser beam having a wavelength of 150 to 400 nm to introduce strain fields onto th...
11/01/1988
4769108System for the production of semiconductor component elements
A system is disclosed for the production of a number of disk-shaped semiconductor bodies from a large face contacted semiconductor starting chip, which is attached to a carrier plate, where in several steps simultaneous treatment of all semiconductor bodi...
09/06/1988
4312012Nucleate boiling surface for increasing the heat transfer from a silicon device to a liquid coolant
The invention is a structure for improving the cooling characteristics of a silicon semiconductor device immersed in a fluid coolant. The cooling improvement is achieved by enhancing the nucleate boiling characteristics of the silicon device by initially ...
01/19/1982
4247579Method for metallizing a semiconductor element
A method for forming an electrode on a semiconductor device is described. Where surface adjacent regions of differing dislocation densities are present, an initial mechanical abrading step followed by a plasma etching step produces a surface to which a me...
01/27/1981
4027323Photodetector array delineation method
A novel mask is used to contour the photodetector body and adhesive layer of a photodetector device on a substrate in which the mask apertures define an angle with the plane of the substrate. Air abrasion at that angle removes unwanted portions of the pho...
05/31/1977
3987479Semiconductor power component
A semiconductor power element comprising two successive opposed polarity planar pn junctions, said element being positively tapered on its lateral surface in the regions of both pn junctions to form an average angle of both tapers of between 30° and 60°...
10/19/1976
3965567Method for producing diffused contacted and surface passivated semiconductor chips for semiconductor devices
A method for producing diffused, contacted and surface passivated semiconductor chips for semiconductor devices, wherein after producing a semiconductor wafer with a given arrangement of layers and regions of different conductance and different conductivi...
06/29/1976
3953941Method and apparatus for making a groove in a semi-conductor element
A method and apparatus for forming a groove in a semiconductor element with at least two junctions between regions of alternating opposite conduction types and different doping concentrations and with the semiconducting region enclosed between the junctio...
05/04/1976
 
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