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Class 257/E21.237 - Mechanical treatment, e.g., grinding, polishing, cutting (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.214. This
No. of patents: 238
Last issue date: 09/09/2008


1            
NumberTitleIssue Date
7422963Method for cleaving brittle materials
An apparatus for cleaving a section of a bar of brittle material is provided. The apparatus comprises a support adapted to hold the section of the bar in a position to be cleaved, a blade, an actuator coupled to the blade for driving the blade at least partially thr...
09/09/2008
7419885Method for cutting a wafer using a protection sheet
The method for dicing a wafer including the steps of: reducing a thickness of a wafer to at least 0.1mm or less; forming a protection sheet tightly on one side of the wafer, the protection sheet having a Vickers hardness of 2 or more; and dicing the wafer by a grind...
09/02/2008
7384827Method of manufacturing semiconductor device using liquid phase deposition of an interlayer dielectric
Exemplary embodiments of the invention provide techniques that enable avoidance of the concentration of an electric field at the edge of a semiconductor film in a semiconductor device such as a thin film transistor, thereby enhancing the reliability. Exemplary embod...
06/10/2008
7371664Process for wafer thinning
The present invention relates to a process for thinning a semiconductor wafer. Two surfaces of the wafer separately form a surface-bond glue (layer) and a surface protective glue (layer). The thinning process is applied to the wafer before forming the surface protec...
05/13/2008
7348262Method for fabricating module of semiconductor chip
A method for fabricating a module of a semiconductor chip is provided. The method includes the steps of: forming a bump on a substrate provided with a pad; forming a protection layer over the bump; performing a grinding process on a rear surface of the substrate to ...
03/25/2008
7348216Rework process for removing residual UV adhesive from C4 wafer surfaces
A method for the removal of residual UV radiation-sensitive adhesive from the surfaces of semiconductor wafers, remaining thereon from protective UV radiation-sensitive tapes which were stripped from the semiconductor wafers. Moreover, provided is an arrangement for...
03/25/2008
7344900Laser scribe on front side of semiconductor wafer
Disclosed are a semiconductor wafer (10) having a front side laser scribe (22) and the methods for manufacturing the same. The methods of the invention include the formation of a scribe foundation (12) on the front side of the semiconductor wafe...
03/18/2008
7335574Semiconductor device and manufacturing method of the same
Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the ...
02/26/2008
7282383Micromachine production method
In a production method of a micromachine having a space between first and second electrodes, a first electrode is formed on a substrate, and then a stopper film is formed on its surface. Next, a second insulating film is formed as to cover the stopper film. The thic...
10/16/2007
7273824Semiconductor structure and fabrication therefor
A semiconductor structure and a method of fabrication there-for are provided. The semiconductor structure comprises a substrate, a dielectric layer disposed over the substrate, a hydrophilic material layer disposed over the dielectric layer, and a hardmask layer dis...
09/25/2007
7262114Die attaching method of semiconductor chip using warpage prevention material
A die attaching method of a semiconductor chip simplifies the process of fabricating a package from the chip while preventing the chip form being damaged even when the chip is very thin. Warpage prevention material is adhered to a top surface of a wafer having a plu...
08/28/2007
7256107Damascene process for use in fabricating semiconductor structures having micro/nano gaps
In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrific...
08/14/2007
7256105Semiconductor substrate and thin processing method for semiconductor substrate
A semiconductor substrate having a first substrate surface which includes a device area in which semiconductor devices are formed and a substrate peripheral portion which does not overlap with the device area. A concavo-convex portion is formed in the substrate peri...
08/14/2007
7250365Fabrication method of semiconductor integrated circuit device
A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum p...
07/31/2007
7217662Method of processing a substrate
There is disclosed a method of processing a substrate, which comprises applying a surfactant or a water soluble polymer agent onto a surface of a substrate to be processed, and sliding a circumferential portion of the substrate and a polishing member against each ot...
05/15/2007
7186574CMP process metrology test structures
A method for forming metrology structures for a CMP process is described. A trench edge is formed in a base material or stack of materials which are preferably deposited as part of the process of fabricating the production structures on the wafer. A covering film of...
03/06/2007
7183178Method of manufacturing semiconductor wafer
A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof. To prevent the semiconductor wafer from warping even when it is worked as very thin as 100 Î...
02/27/2007
7157376Method and apparatus for handling thin semiconductor wafers
Cassettes for holding thin semiconductor wafers for safe handling are provided, along with an improved methodology for reducing the thickness of semiconductor wafers. Embodiments include a cassette for holding thin semiconductor wafers, having a plurality of sets of...
01/02/2007
7115443Method and apparatus for manufacturing a packaged semiconductor device, packaged semiconductor device obtained with such a method and metal carrier suitable for use in such a method
The invention relates to a method of manufacturing a packaged semiconductor device comprising subjecting a metal carrier provided with at least one semiconductor crystal, the semiconductor crystal being provided with an encapsulation, to a singulation step in a dici...
10/03/2006
6664129Integrated circuits and methods for their fabrication
To fabricate contacts on a wafer backside, openings (124) are formed in the face side of the wafer (104). A dielectric layer (140) and some contact material (150), e.g. metal, are deposited into the openings. Then the backside is etched until the contacts...
12/16/2003
6656818Manufacturing process for semiconductor wafer comprising surface grinding and planarization or polishing
Provided is a manufacturing process for a semiconductor wafer according to which semiconductor wafers each with higher flatness can be manufactured with good efficiency from a wafer work having passed through a surface grinding step by enabling restrictio...
12/02/2003
6652362Apparatus for polishing a semiconductor wafer and method therefor
An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disp...
11/25/2003
6649478Semiconductor device and method of manufacturing same
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconduc...
11/18/2003
6649445Wafer coating and singulation method
A method for providing an underfill material on an integrated circuit chip at the wafer level. The wafer (10) typically contains one or more integrated circuit chips (12), and each integrated circuit chip typically has a plurality of solder bumps (34) on ...
11/18/2003
6642127Method for dicing a semiconductor wafer
A method and apparatus for dicing a semiconductor wafer using a plasma etch process. The method begins by applying a patterned mask to the integrated circuits on a wafer. The pattern covers the circuits and exposes the streets between the dice. Next, the ...
11/04/2003
6639303Integrated circuits and methods for their fabrication
To fabricate back side contact pads that are suitable for use in a vertical integrated circuit, vias are made in the face side of a wafer, and dielectric and contact pad metal are deposited into the vias. Then the wafer back side is etched until the metal...
10/28/2003
6635512Method of producing a semiconductor device by dividing a semiconductor wafer into separate pieces of semiconductor chips
A method of producing a semiconductor device by dividing a semiconductor wafer into separate pieces of semiconductor chips. This method includes forming a groove with a pattern according to an outer contour of a desired semiconductor chip, holding the sem...
10/21/2003
6624048Die attach back grinding
An apparatus for constructing a number of integrated circuits from a single substrate is provided by the present invention. A number of integrated circuits are constructed on the single substrate. The individual integrated circuits are then separated by c...
09/23/2003
6534382Process for producing semiconductor article
A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force ...
03/18/2003
6514423Method for wafer processing
A method for processing a semiconductor wafer to reduce surface roughness. The wafer has two flat, opposite faces with a peripheral edge extending around a circumference of the wafer between the faces. The method includes, in the following order, the step...
02/04/2003
6498366Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconduc...
12/24/2002
6472289Dielectrically separated wafer and method of manufacturing the same
A dielectrically separated wafer and a fabrication method of the same makes it possible to expand the device fabrication surface area of the dielectrically separated silicon islands by laminating a low concentration impurity layer including a dopant of th...
10/29/2002
6465328Semiconductor wafer manufacturing method
An edge-rounded portion mirror finishing process, which results in low deformation on a wafer, which has undergone a slicing process including a grinding process in which double-sided grinding is performed on the. sliced wafer; a finishing grinding proces...
10/15/2002
6465353Process of thinning and blunting semiconductor wafer edge and resulting wafer
A wafer having a rounded edge is thinned to 100 microns or less, producing a tapered razor like edge. The edge is ground to blunt it and reduce danger to personnel and equipment during handling of the wafer....
10/15/2002
6461228Grinding and polishing machines
A method of grinding the edge of a disc uses a grinding machine having mounted thereon a grooved grinding wheel, in which the groove is formed in situ using a forming wheel also mounted on the grinding machine. After a workpiece has been ground or after a...
10/08/2002
6455399Smoothing method for cleaved films made using thermal treatment
In a specific embodiment, the present invention provides a novel process for smoothing a surface of a separated film. The present process is for the preparation of thin semiconductor material films. The process includes a step of implanting by ion bombard...
09/24/2002
6451696Method for reclaiming wafer substrate and polishing solution compositions therefor
A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the w...
09/17/2002
6452091Method of producing thin-film single-crystal device, solar cell module and method of producing the same
The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the...
09/17/2002
6448155Production method of semiconductor base material and production method of solar cell
When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the su...
09/10/2002
6440859Method for etching passivation layer of wafer
In an improved method for etching a groove n the uppermost layer of a semiconductor wafer, a conventional anisotropic etch is performed to achieve a narrow groove and an isotropic etch is performed to widen the groove at the device surface and thereby rou...
08/27/2002
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