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| Number | Title | Issue Date |
| 7419581 | Method for producing optically transparent regions in a silicon substrate A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity i... | 09/02/2008 |
| 7378738 | Method for producing self-aligned mask, articles produced by same and composition for same A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of... | 05/27/2008 |
| 7358102 | Method for fabricating microelectromechanical optical display devices A Method of forming microelectromechanical optical display devices is provided. A sacrificial layer is formed above a substrate. A plurality of posts penetrating the sacrificial layer is formed. A reflective layer and a flexible layer are sequentially formed above t... | 04/15/2008 |
| 7319073 | Method of reducing silicon damage around laser marking region of wafers in STI CMP process A wafer has thereon a plurality of integrated circuit die areas, scribe line that surrounds each of the integrated circuit die areas, and a laser marking region having therein a laser marking feature. A pad layer is formed on the wafer. AA photoresist pattern is for... | 01/15/2008 |
| 7307014 | Method of forming a via contact structure using a dual damascene process A method of forming a via contact structure using a dual damascene process is disclosed. According to one embodiment a sacrificial layer is formed on an insulating interlayer during the formation of a preliminary via hole. The sacrificial layer has the same composit... | 12/11/2007 |
| 7288486 | Method for manufacturing semiconductor device having via holes In a method for manufacturing a semiconductor device wherein via holes are formed in an SiC substrate, a stacked film consisting of a Ti film and an Au film is formed on the back face of the SiC substrate, and a Pd film is formed thereon. Then, an Ni film is formed ... | 10/30/2007 |
| 7282455 | Method of producing a diffraction grating In an embodiment, a method of producing a diffraction grating comprises steps of: forming, on a man surface of a first member, a first mask having a plurality of resist patterns arranged at a Bragg diffraction period; etching the first member by use of the first mas... | 10/16/2007 |
| 7250371 | Reduction of feature critical dimensions A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited... | 07/31/2007 |
| 7241697 | Method for sensor edge control and track width definition for narrow track width devices A process for defining and controlling the track width for sensor devices is disclosed. An RIE-resistant, image layer, such as Cu or NiFe, is deposited after the DLC layer. A combination of RIE and ion milling processes or reactive ion beam etching processes are use... | 07/10/2007 |
| 7241698 | Method for sensor edge and mask height control for narrow track width devices A process for defining and controlling the mask height of sensor devices is disclosed. An RIE-resistant, image layer, such as Cu or NiFe, is deposited after the DLC layer. A combination of RIE and ion milling processes or reactive ion beam etching processes are used... | 07/10/2007 |
| 7115993 | Structure comprising amorphous carbon film and method of forming thereof A semiconductor device includes a semiconductor substrate, a film stack formed on the semiconductor substrate and having a film to be processed. A dual hard mask included in the film stack has an amorphous carbon layer and an underlying hard mask layer interposed be... | 10/03/2006 |
| 6696759 | Semiconductor device with diamond-like carbon layer as a polish-stop layer A semiconductor structure includes a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate in a damascene process flow. The semiconductor structure includes a substrate having a dielectric layer f... | 02/24/2004 |
| 6696363 | Method of and apparatus for substrate pre-treatment The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus incl... | 02/24/2004 |
| 6677242 | Integrated shallow trench isolation approach A method for processing a silicon substrate disposed in a substrate process chamber includes transferring the substrate into the substrate process chamber. The substrate having a hard mask formed thereon and a patterned photoresist overlying the hard mask... | 01/13/2004 |
| 6673696 | Post trench fill oxidation process for strained silicon processes A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The liner for the trench is formed in a high temperature process a... | 01/06/2004 |
| 6667221 | Method of manufacturing semiconductor device A technique for preventing a decrease in alignment accuracy during a photolithography process is provided. A substrate (1) is prepared, in the surface (80) of which trenches (7) for use as alignment marks and trenches (17, 27) each forming an element isol... | 12/23/2003 |
| 6656845 | Method for forming semiconductor substrate with convex shaped active region Within a method for fabricating a semiconductor substrate while employing formed thereover a mask layer there is first employed the mask layer as an etch mask layer for forming a pair of isolation trenches within the semiconductor substrate and then later... | 12/02/2003 |
| 6656341 | Method of etching, as well as frame element, mask and prefabricated substrate element for use in such etching In a method of etching a substrate having a surface layer of conductive material, a circuit pattern is transferred to the surface layer in a central surface area portion of the substrate by electrochemical etching. To prevent excessive current densities f... | 12/02/2003 |
| 6653202 | Method of shallow trench isolation (STI) formation using amorphous carbon An exemplary embodiment relates to a method of shallow trench isolation (STI) formation using amorphous carbon as a sacrificial polish stop layer. The method can include polishing a silicon dioxide layer located above a wafer, polishing portions of the si... | 11/25/2003 |
| 6645876 | Etching for manufacture of semiconductor devices A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2 SO4 and NH4 F or H2 SO4 and HF as main... | 11/11/2003 |
| 6638866 | Chemical-mechanical polishing (CMP) process for shallow trench isolation A method of forming shallow trench isolation using CMP is described. A pad oxide layer is grown overlying a silicon semiconductor substrate. A polysilicon layer and a nitride layer are deposited. Trenches are etched through the nitride layer, polysilicon ... | 10/28/2003 |
| 6635494 | Method of forming a two-dimensionally arrayed quantum device using a metalloprotein complex as a quantum-dot mask array A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of t... | 10/21/2003 |
| 6630390 | Method of forming a semiconductor device using a carbon doped oxide layer to control the chemical mechanical polishing of a dielectric layer A method for making a semiconductor device is described. That method comprises forming a carbon doped oxide containing layer and a dielectric layer on a substrate, such that at least part of the dielectric layer is located above at least part of the carbo... | 10/07/2003 |
| 6627557 | Semiconductor device and method for manufacturing the same Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of forming an insulating film or a metal film on a surface of a semiconductor substrate, forming at least two kinds of mask on a surface of the insulating film or the... | 09/30/2003 |
| 6607992 | Antireflection coating and semiconductor device manufacturing method An antireflection coating has two-layer structure including lower and upper silicon nitride films (p-SiN films) formed by plasma CVD. For the lower p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.9 nor more... | 08/19/2003 |
| 6602433 | Gas delivery system A substrate is treated by supplying an etchant and/or deposition gas into a chamber in which the substrate is situated. In order to avoid the problems associated with transportation of toxic gases, the gases required for such processes are delivered direc... | 08/05/2003 |
| 6589888 | Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture of a silicon source, a carbon source, and an inert gas in the presence of an electric field.... | 07/08/2003 |
| 6562544 | Method and apparatus for improving accuracy in photolithographic processing of substrates This invention provides a method and apparatus for depositing a silicon oxide film over an antireflective layer to reduce footing experienced in the a subsequently applied photoresist layer without substantially altering the optical qualities of the antir... | 05/13/2003 |
| 6544838 | Method of deep trench formation with improved profile control and surface area A method for etching trenches includes providing a patterned mask stack on a substrate. A trench is etched in the substrate by forming a tapered-shaped trench portion of the trench, which narrows with depth in the substrate by employing a first plasma che... | 04/08/2003 |
| 6518194 | Intermediate transfer layers for nanoscale pattern transfer and nanostructure formation A method for using intermediate transfer layers for transferring nanoscale patterns to substrates and forming nanostructures on substrates. An intermediate transfer layer is applied to a substrate surface, and one or more mask templates are then applied t... | 02/11/2003 |
| 6503813 | Method and structure for forming a trench in a semiconductor substrate A method and structure for forming a trench in a semiconductor substrate that includes a semiconductor material such as silicon. The method and structure may be used to form a deep trench or a shallow trench, without having a pad oxide in contact with the... | 01/07/2003 |
| 6491835 | Metal mask etching of silicon The present disclosure provides a method for etching trenches, contact vias, or similar features to a depth of 100 μm and greater while permitting control of the etch profile (the shape of the sidewalls surrounding the etched opening). The method require... | 12/10/2002 |
| 6482751 | Titanium dioxide layer serving as a mask and its removed method A titanium dioxide layer serving as a mask used in a manufacturing process of integrated circuit and its removed method are disclosed. The method includes the steps of forming a titanium dioxide layer on the integrated circuit device to serve as a mask, a... | 11/19/2002 |
| 6475919 | Method for producing trenches for DRAM cell configurations The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. In the method, a two-stage hard mask having a first mask layer (1) and an underlying second mask layer (2) is used. A resist mask is... | 11/05/2002 |
| 6465366 | Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and an inert gas in the presence of an electri... | 10/15/2002 |
| 6429538 | Method for making a novel graded silicon nitride/silicon oxide (SNO) hard mask for improved deep sub-micrometer semiconductor processing A novel graded composite silicon nitride/silicon oxide (SNO) hard mask, and manufacturing method is achieved. This novel SNO film improves the profile (optical fidelity) of the photoresist etch mask image used to pattern the SNO film, and thereby improves... | 08/06/2002 |
| 6420271 | Method of forming a pattern A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment... | 07/16/2002 |
| 6376300 | Process of manufacturing trench capacitor having a hill structure A process of manufacturing a trench capacitor having a hill structure includes the steps of providing a semiconductor substrate, forming a passivation layer on the semiconductor substrate, etching the passivation layer to form a trench defined by a side w... | 04/23/2002 |
| 6358316 | Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure In a method for producing a semiconductor device, a compound semiconductor cap layer including no aluminum is grown on a compound semiconductor layer including aluminum, a mask pattern insulating film is formed on a part of the compound semiconductor cap ... | 03/19/2002 |
| 6355181 | Method and apparatus for manufacturing a micromechanical device In the manufacture of a micromechanical device, a substrate, having a mask thereon, is etched using a flourine-containing etchant gas or vapour in the absence of a plasma through an opening in the mask to a desired depth to form a trench having a side wal... | 03/12/2002 |
