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| Number | Title | Issue Date |
| 7416942 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and... | 08/26/2008 |
| 7396749 | Method for contacting parts of a component integrated into a semiconductor substrate The invention relates to a method for contacting parts of a component integrated into a semiconductor substrate (1). According to the inventive method, a first contact hole is produced in an insulating layer (2), said contact hole being then filled wit... | 07/08/2008 |
| 7393789 | Protective coating for planarization Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolida... | 07/01/2008 |
| 7361602 | CMP process A method of forming a polished semiconductor structure comprises polishing a surface of a semiconductor structure by chemical mechanical polishing. Pressure applied to the surface is reduced during the polishing, or a rotation rate of a polishing surface relative to... | 04/22/2008 |
| 7358181 | Method for structuring a semiconductor device A method for structuring a laterally extending first layer in a semiconductor device with the aid of a reactive second layer, which together with the first layer to be structured forms first reaction products, which products are removed by material removal that acts... | 04/15/2008 |
| 7338882 | Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same A method of fabricating a nano silicon on insulator (SOI) wafer having an excellent thickness evenness without performing a chemical mechanical polishing (CMP) and a wafer fabricated by the same are provided. The provided method includes preparing a bond wafer and a... | 03/04/2008 |
| 7329606 | Semiconductor device having nanowire contact structures and method for its fabrication A semiconductor device having small electrical contacts to impurity doped regions and a method for fabrication of such a device are provided. In accordance with one embodiment of the invention the semiconductor device comprises a semiconductor substrate having a dop... | 02/12/2008 |
| 7294569 | Semiconductor device fabrication method and semiconductor device fabrication system for minimizing film-thickness variations A polishing-rate distribution of a target film is compared with a desired post-polishing film-thickness distribution of the target film, thereby obtaining a pre-polishing film-thickness distribution of the target film by a reverse calculation, so that film growing c... | 11/13/2007 |
| 7276743 | Retaining ring with conductive portion A retaining ring for use with electrochemical mechanical processing is described. The retaining ring has a generally annular body formed with a conductive portion and a non-conductive portion. The non-conductive portion contacts the substrate during polishing. The c... | 10/02/2007 |
| 7247558 | Method and system for electroprocessing conductive layers The invention provides a process for forming a planar copper structure on a wafer surface in a first module and a second module of a system. During the process, a copper layer is formed on the wafer surface by utilizing an electrochemical deposition process in the f... | 07/24/2007 |
| 7241692 | Method and structure for aluminum chemical mechanical polishing and protective layer A method for chemical mechanical polishing of mirror structures. The method includes providing a semiconductor substrate, e.g., silicon wafer. The method includes forming a first dielectric layer overlying the semiconductor substrate and forming an aluminum layer ov... | 07/10/2007 |
| 7229927 | Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics The invention utilizes colloidal silica soot (62) in a semiconductor process for chemical-mechanical planarizing a semiconductor integrated circuit workpiece (24) with a slurry (60). The particulate abrasive agent colloidal solid sphere fused si... | 06/12/2007 |
| 7208388 | Thin film resistor head structure and method for reducing head resistivity variance A method of making integrated circuit thin film resistor includes forming a first dielectric layer (18B) over a substrate and providing a structure to reduce variation of head resistivity thereof by forming a dummy fill layer (9A) on the first dielectr... | 04/24/2007 |
| 7199056 | Low cost and low dishing slurry for polysilicon CMP Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mec... | 04/03/2007 |
| 7196012 | Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency incl... | 03/27/2007 |
| 7192869 | Methods for planarizing a metal layer Methods for planarizing a metal layer in a semiconductor device are disclosed. An illustrated example method comprises dividing a metal layer into a first section and a second section. A polishing removal rate associated with the first section is greater than a poli... | 03/20/2007 |
| 7183214 | High-density plasma (HDP) chemical vapor deposition (CVD) methods and methods of fabricating semiconductor devices employing the same In one embodiment, a semiconductor substrate is placed into a process chamber. A gas mixture including a silicon-containing gas, a fluorine-containing gas, an inert gas, and an oxygen gas is introduced into the chamber at a pressure range of from about 30 mTorr to a... | 02/27/2007 |
| 7183212 | Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The pre... | 02/27/2007 |
| 7179753 | Process for planarizing substrates of semiconductor technology In a process for planarization of semiconductor substrates in which a layer which has been applied to a semiconductor substrate which has a trench and/or contact holes is removed such that the layer remains solely in the area of the trenches or contact holes, instea... | 02/20/2007 |
| 7176041 | PAA-based etchant, methods of using same, and resultant structures A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):... | 02/13/2007 |
| 7081380 | Method of forming a conductive pattern of a semiconductor device and method of manufacturing a non-volatile semiconductor memory device using the same A method of forming a conductive pattern of a semiconductor device includes forming a conductive layer is on a substrate, forming a polishing protection layer on the substrate including over the conductive layer, and forming a step compensation layer on the polishin... | 07/25/2006 |
| 7005382 | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a pr... | 02/28/2006 |
| 6889177 | Large area pattern erosion simulator A pseudo-physical model simulates the erosion of large area three-dimensional patterns on workpieces during a chemical mechanical polishing process. The model is based on determining the vertical location of individual nodes on the polishing pad stack and correspond... | 05/03/2005 |
| 6682628 | Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies Methods and apparatuses for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance w... | 01/27/2004 |
| 6682404 | Method for controlling a temperature of a polishing pad used in planarizing substrates A method for controlling a polishing characteristic of a polishing pad used in the planarization of a substrate is disclosed. The method includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations ... | 01/27/2004 |
| 6682408 | Polishing apparatus A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against ... | 01/27/2004 |
| 6679756 | Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device Prior to the polishing of the wafer, a reflective body which has the same shape and dimensions as the wafer is held on the polishing head instead of the wafer. A polishing agent is interposed between the window of the polishing head and the reflective bod... | 01/20/2004 |
| 6676801 | Pressure suppression device for chemical mechanical polishing machine and method thereof A pressure suppression device for a chemical mechanical polishing machine. The chemical mechanical polishing machine includes a polishing table and a polishing head. The polishing table has a polishing pad and a polishing gas input through which a polishi... | 01/13/2004 |
| 6676487 | Method for polishing surface of vapor-phase synthesized thin diamond film A surface of a vapor-phase deposited, synthetic thin diamond film is polished by: preparing a polishing liquid of silicon dioxide powder particles having an average particle size within the range of from 5 to 1,000 nm dispersed and distributed in an a... | 01/13/2004 |
| 6672941 | Method and apparatus for chemical/mechanical planarization (CMP) of a semiconductor substrate having shallow trench isolation A method to planarize the surface of a semiconductor substrate having shallow trench isolation (STI) reduces erosion of a silicon nitride planarization stop layer, reduces dishing of large areas of the shallow trench isolation, and prevents under polishin... | 01/06/2004 |
| 6663466 | Carrier head with a substrate detector A carrier head has a base, a flexible membrane, and a valve in the carrier head that forms part of a substrate detection system. The valve includes a valve stem that contacts an upper surface of the flexible membrane so that if a substrate is attached to ... | 12/16/2003 |
| 6652357 | Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing A CMP system and methods make repeatable measurements of eccentric forces applied to carriers for wafer or polishing pad conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such ca... | 11/25/2003 |
| 6649523 | Method and system to provide material removal and planarization employing a reactive pad Systems and methods to remove a first material located on a top surface of a workpiece are presented according to one aspect of the present invention. According to an exemplary method, the pad including a second material is positioned proximate to the wor... | 11/18/2003 |
| 6645862 | Double-side polishing process with reduced scratch rate and device for carrying out the process A process for producing semiconductor wafers by double-sided polishing between two rotating, upper and lower polishing plates, which are covered with polishing cloth, while an alkaline polishing abrasive with colloidal solid fractions is being supplied, t... | 11/11/2003 |
| 6645050 | Multimode substrate carrier Generally, a method and apparatus for retaining a substrate is provided. In one embodiment, a carrier for retaining a substrate comprises a carrier plate having a lower surface, at least one first fluid outlet and a second fluid outlet. The first fluid ou... | 11/11/2003 |
| 6638145 | Constant pH polish and scrub A system and method are provided that maintains a high pH at the wafer surface through the entire polish process and then lowers the pH only when necessary in a controlled fashion after CMP and during the post-polish clean. A fluid having a high pH chemis... | 10/28/2003 |
| 6640155 | Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of vari... | 10/28/2003 |
| 6632743 | Post-planarization, pre-oxide removal ozone treatment Washing a microelectronic substrate with an ozonated solution following planarization and proceeding removal of a native oxide layer through acid etching.... | 10/14/2003 |
| 6632124 | Optical monitoring in a two-step chemical mechanical polishing process An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance tr... | 10/14/2003 |
| 6633084 | Semiconductor wafer for improved chemical-mechanical polishing over large area features The present invention is a semiconductor wafer, and a method of fabricating the semiconductor wafer, that reduces dishing over large area features in chemical-mechanical polishing processes. The semiconductor wafer has a substrate with an upper surface, a... | 10/14/2003 |
