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| Number | Title | Issue Date |
| 7419581 | Method for producing optically transparent regions in a silicon substrate A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity i... | 09/02/2008 |
| 7410907 | Fabricating integrated devices using embedded masks A method of fabricating a device using a multi-layered wafer that has an embedded etch mask adapted to map a desired device structure onto an adjacent (poly)silicon layer. Due to the presence of the embedded mask, it becomes possible to delay the etching that forms ... | 08/12/2008 |
| 7306966 | Method for producing a semiconductor component and a semiconductor component, especially a membrane sensor In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semicond... | 12/11/2007 |
| 7303995 | Method for reducing dimensions between patterns on a photoresist A semiconductor manufacturing method that includes providing a substrate, providing a layer of material over the substrate, providing a layer of photoresist over the material layer, patterning and defining the photoresist layer, depositing a layer of polymer over th... | 12/04/2007 |
| 7300875 | Post metal chemical mechanical polishing dry cleaning Metal residue on a semiconductor surface resulting from metal chemical mechanical polishing (“CMP”) process are eradicated using a dry clean process. The dry cleaning uniformly removes or substantially eliminates metal residue from the surface of the semiconduct... | 11/27/2007 |
| 7279404 | Process for fabricating strained layers of silicon or of a silicon/germanium alloy A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes: a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; and | 10/09/2007 |
| 7232772 | Substrate processing method A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a plan... | 06/19/2007 |
| 7211521 | Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer A structure including at least one layer of germanium formed on a surface of a ceramic substrate is provided. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. A structure including at lea... | 05/01/2007 |
| 7205250 | Plasma processing method and apparatus A Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of electric charge on a plasma-processed processing-object substrate and of preventing plasma damage and dielectric breakdown. Before the processing-object substrate is... | 04/17/2007 |
| 7144791 | Lamination through a mask The present invention is a process for transfer of a pattern of material from a donor substrate to a receiver substrate by lamination. The pattern of the transferred material is defined by an aperture in a mask interposed between the donor and receiver during lamina... | 12/05/2006 |
| 7125803 | Reverse tone mask method for post-CMP elimination of copper overburden A novel reverse-tone mask method which is capable of eliminating metal overburden humps in a metal layer electroplated onto a substrate, is disclosed. Typically, the method includes providing a masking layer on a metal layer such as copper previously electroplated o... | 10/24/2006 |
| 6969630 | Method of making an integrated electromechanical switch and tunable capacitor A monolithically integrated, electromechanical microwave switch, capable of handling signals from DC to millimeter-wave frequencies, and an integrated electromechanical tunable capacitor are described. Both electromechanical devices include movable beams actuated ei... | 11/29/2005 |
| 6677252 | Methods for planarization of non-planar surfaces in device fabrication A method of planarizing a surface of a wafer includes providing a planarization material on the wafer surface and bringing a substantially flat surface into contact with the planarization material on the wafer. The planarization material is exposed to rad... | 01/13/2004 |
| 6673693 | Method for forming a trench in a semiconductor substrate A method for forming a trench in a semiconductor substrate includes configuring a mask on the substrate. The mask has a window in which a substrate surface is uncovered. The substrate is electrochemically etched proceeding from the substrate surface. A po... | 01/06/2004 |
| 6649076 | Method for performing plasma process on particles The disclosed is a method and apparatus capable of certainly performing a plasma process such as isotropic plasma etching on the whole surface of a particle. A particle (2) is passed through a passage (3) in which inductive coupled plasma is generated and... | 11/18/2003 |
| 6649485 | Method for the formation and lift-off of porous silicon layers A method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode. The method comprises applying a solution comprising negative Fluorine (F-) ions between the surfac... | 11/18/2003 |
| 6627556 | Method of chemically altering a silicon surface and associated electrical devices A method of chemically altering a silicon surface and associated dielectric materials are disclosed.... | 09/30/2003 |
| 6613695 | Surface preparation prior to deposition Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the su... | 09/02/2003 |
| 6602767 | Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery A method for transferring a porous layer includes forming a porous layer on one side of a crystalline silicon member by anodization, fixing a supporting substrate onto the surface of the porous layer, and applying force to any one of the supporting substr... | 08/05/2003 |
| 6566271 | Method of producing a semiconductor surface covered with fluorine Fluorine is deposited on a semiconductor substrate surface according to a novel process. A semiconductor substrate is placed in a reaction chamber and the substrate surface is wetted with water and/or alcohol. A compound containing fluorine is led to the ... | 05/20/2003 |
| 6566235 | Process for producing semiconductor member, and process for producing solar cell A process for producing a semiconductor member, comprising a first step of forming a porous layer by making porous a first member at its surface portion, leaving some region or regions thereof not made porous; a second step of bonding a semiconductor laye... | 05/20/2003 |
| 6482720 | Method for manufacturing compound semiconductor device In manufacturing compound semiconductor device, a plasma treatment is carried out by exposing surface of compound semiconductor material including AlAs or InAs exposing in atmosphere at manufacturing process in plasma of gas including any of P, N, H, and ... | 11/19/2002 |
| 6468663 | Semiconductor substrate and process for producing the same A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocry... | 10/22/2002 |
| 6451696 | Method for reclaiming wafer substrate and polishing solution compositions therefor A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the w... | 09/17/2002 |
| 6398943 | Process for producing a porous layer by an electrochemical etching process A porous layer produced from silicon, germanium or aluminum by applying a wedge-shaped mask to the surface of the layer and by controlled elecrochemical etching along the mask.... | 06/04/2002 |
| 6369405 | Silicon quantum wires A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in ... | 04/09/2002 |
| 6362079 | Semiconductor device and method of anodization for the semiconductor device A first p-type silicon layer (3) is formed as a buried layer in a p-type single crystal silicon substrate (2), and an n-type silicon layer (4) is formed on the upper side of the silicon substrate (2). A second p-type silicon layer (5) for forming an openi... | 03/26/2002 |
| 6332833 | Method for fabricating silicon semiconductor discrete wafer A method of fabricating a silicon semiconductor discrete wafer while dressing the grinding wheel is disclosed that assures excellent finishing accuracy and productivity. The dressing of the grinding wheel includes mixing air and grinding water from a surf... | 12/25/2001 |
| 6309945 | Process for producing semiconductor substrate of SOI structure A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocry... | 10/30/2001 |
| 6303472 | Process for cutting trenches in a single crystal substrate A process for cutting a trench in a silicon monocrystal in areas defined by a mask comprises forming a mask that defines an etched area on the surface of a monocrystalline silicon wafer which is eventually covered by a thin layer of oxide. Next, ions are ... | 10/16/2001 |
| 6287988 | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device A method of manufacturing a semiconductor device, which comprises a step of forming an oxide film by oxidizing a surface of semiconductor layer in an atmosphere containing an oxygen-activated species at a temperature of over 550° C. A method of manufactu... | 09/11/2001 |
| 6284317 | Derivatization of silicon surfaces The present invention relates to methods of derivatizing semiconductor surfaces, particularly porous silicon surfaces with silicon-carbon units. The derivatization occurs through the direct addition of an organometallic reagent in the absence of an extern... | 09/04/2001 |
| 6277662 | Silicon substrate and forming method thereof This invention concerns a silicon substrate which has area-selectively formed porous silicon, and a forming method thereof, and aims at providing a silicon substrate in which porosity, pore size, and pore size distribution of a porous silicon region and a... | 08/21/2001 |
| 6261928 | Producing microstructures or nanostructures on a support A method for producing a micro- or nanostructure on a substrate. In a first step, one surface of a first wafer in crystalline material is placed in contact with one surface of a second wafer in crystalline material, such that crystalline lattices presente... | 07/17/2001 |
| 6254794 | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocryst... | 07/03/2001 |
| 6254719 | Method for controlled removal of material from a solid surface A catalytic method and an apparatus for selectively removing material from a solid substrate is provided. The method comprises contacting a surface of a solid substrate with a catalyst material in the presence of a reactant under conditions effective to s... | 07/03/2001 |
| 6254718 | Combined CMP and plasma etching wafer flattening system A wafer flattening process designed to flatten the entire surface of the wafer to a higher precision by projecting the fall in the etching rate at the outer peripheral portion of the wafer and forming the outer peripheral portion of the wafer thinner in a... | 07/03/2001 |
| 6238586 | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocryst... | 05/29/2001 |
| 6197654 | Lightly positively doped silicon wafer anodization process A method of anodizing a lightly doped wafer wherein there is provided a lightly p-typed doped silicon wafer having a frontside and a backside. A p-type region is formed on the backside doped sufficiently to avoid inversion to n-type when a later applied c... | 03/06/2001 |
| 6171512 | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocryst... | 01/09/2001 |
