Class 257/E21.188 - Heterojunction gate structure (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.176. This subclass
No. of patents: 2
Last issue date: 11/20/2007

Number	Title	Issue Date
7297589	Transistor device and method A method for making a heterojunction bipolar transistor includes the following steps: forming a heterojunction bipolar transistor by depositing, on a substrate, subcollector, collector, base, and emitter regions of semiconductor material; the step of depositing the ...	11/20/2007
7271422	Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region includes first and second semiconductor portions. The first and second semiconductor portions are made of nitride mixed semiconductor crystal. This first semiconductor portion has a firs...	09/18/2007

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