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Class 257/E21.184 - PN-homojunction gate structure (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.176. This subclass
No. of applications: 1
Last issue date: 06/24/2010


Application No.Application TitleIssue Date
20100159685Eliminating Poly Uni-Direction Line-End Shortening Using Second Cut
A method of forming an integrated circuit structure includes providing a substrate including a first active region and a second active region; forming a gate electrode layer over the substrate; and etching the gate electrode layer. The remaining portions of the gate ele... 		06/24/2010
 
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