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| Number | Title | Issue Date |
| 7407876 | Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copper A method for processing a substrate for forming TaC and TaCN films having good adhesion to Cu. The method includes disposing the substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, and dep... | 08/05/2008 |
| 7405158 | Methods for depositing tungsten layers employing atomic layer deposition techniques In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process fo... | 07/29/2008 |
| 7399705 | Method for producing a local coating and combinatory substrate having such coating A method for producing at least one local coating on a substrate is provided, as well as a combinatory substrate having such a local coating, a mask that is removable in a non-destructive manner being arranged on the substrate in a first step; the mask having at lea... | 07/15/2008 |
| 7393783 | Methods of forming metal-containing structures The invention includes methods of forming metal-containing layers. The layers can, in particular aspects, consist essentially of metal, or consist of metal. The desired layers can be formed by initially depositing a metal-containing layer which comprises metal and h... | 07/01/2008 |
| 7393782 | Process for producing layer structures for signal distribution Structures for signal distribution are produced by applying a metallic seed layer over a semiconductor body. An insulating layer is applied over the metallic seed layer and openings in the insulating layer are produced by photolithographic patterning of the insulati... | 07/01/2008 |
| 7390756 | Atomic layer deposited zirconium silicon oxide films A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include form... | 06/24/2008 |
| 7358187 | Coating process for patterned substrate surfaces The present invention provides a coating process for patterned substrate surfaces, in which a substrate (101) is provided, the substrate having a surface (105) which is patterned in a substrate patterning region (102) and has one or more trenche... | 04/15/2008 |
| 7344982 | System and method of selectively depositing Ruthenium films by digital chemical vapor deposition A chemical vapor deposition reaction system converts a reactant precursor, which includes the metal Ruthenium, to a vapor during a chemical reaction in order to deposit the metal on a semiconductor wafer. The reactant precursor is Bis(2,2,6,6-tetramethyl-3,5-heptane... | 03/18/2008 |
| 7335594 | Method for manufacturing a memory device having a nanocrystal charge storage region A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. An absorption layer is formed on the first layer of dielectric material. The a... | 02/26/2008 |
| 7312163 | Atomic layer deposition methods, and methods of forming materials over semiconductor substrates The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least... | 12/25/2007 |
| 7309650 | Memory device having a nanocrystal charge storage region and method A memory device having a metal nanocrystal charge storage structure and a method for its manufacture. The memory device may be manufactured by forming a first oxide layer on the semiconductor substrate, then disposing a porous dielectric layer on the oxide layer and... | 12/18/2007 |
| 7306956 | Variable temperature and dose atomic layer deposition A variable temperature and/or reactant dose atomic layer deposition (VTD-ALD) process modulates ALD reactor conditions (e.g., temperature, flow rates, etc.) during growth of a film (e.g., metallic) on a wafer to produce different film properties a different film dep... | 12/11/2007 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7259057 | Method for forming capacitor of semiconductor device Disclosed is a method for forming a capacitor of a semiconductor device capable of improving the film quality of a dielectric film. The method includes the steps of providing a semiconductor substrate having a storage node contact; forming a metal storage electrode ... | 08/21/2007 |
| 7202166 | Surface preparation prior to deposition on germanium Methods are provided for treating germanium surfaces in preparation for subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to depositing, the germanium surface is treated with plasma products or thermally reacted w... | 04/10/2007 |
| 7148128 | Electronically addressable microencapsulated ink and display thereof We describe a system of electronically active inks which may include electronically addressable contrast media, conductors, insulators, resistors, semiconductive materials, magnetic materials, spin materials, piezoelectric materials, optoelectronic, thermoelectric o... | 12/12/2006 |
| 7122449 | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on... | 10/17/2006 |
| 6703296 | Method for forming metal salicide A method for forming a metal salicide layer on a shallow junction is described. A substrate having a gate structure thereon and a shallow junction therein is provided. An atomic layer deposition (ALD) process is then performed to deposit a tungsten salici... | 03/09/2004 |
| 6703708 | Graded thin films Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of imp... | 03/09/2004 |
| 6699783 | Method for controlling conformality with alternating layer deposition Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of ... | 03/02/2004 |
| 6686271 | Protective layers prior to alternating layer deposition Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of ... | 02/03/2004 |
| 6679951 | Metal anneal with oxidation prevention The invention relates generally to the prevention of copper oxidation during copper anneal processes. In one aspect of the invention, copper oxidation is prevented by carrying out the anneal in the presence of one or more organic reducing agents.... | 01/20/2004 |
| 6673668 | Method of forming capacitor of a semiconductor memory device A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a f... | 01/06/2004 |
| 6667220 | Method for forming junction electrode of semiconductor device A method for forming a junction electrode of a semiconductor device where a gate is formed on a semiconductor substrate by using a predetermined device structure, a contact hole is formed by stacking an interlayer insulation film on the gate, and n-type a... | 12/23/2003 |
| 6664192 | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly dama... | 12/16/2003 |
| 6645835 | Semiconductor film forming method and manufacturing method for semiconductor devices thereof A method for forming a semiconductor film capable allowing easy cleaning of the processing equipment and capable of forming an epitaxial film at low temperatures as well as a manufacturing method for semiconductor devices utilizing this forming method is ... | 11/11/2003 |
| 6635965 | Method for producing ultra-thin tungsten layers with improved step coverage A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The... | 10/21/2003 |
| 6635571 | Process for forming aluminum or aluminum oxide thin film on substrates Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum source in contact with a target substrate and depositing ... | 10/21/2003 |
| 6635523 | Semiconductor device and method of manufacturing the same The method of forming a capacitor of a semiconductor device comprises the steps of forming a semiconductor film connected to a semiconductor substrate, forming a capacitor lower electrode made of a tungsten film selectively on a surface of the semiconduct... | 10/21/2003 |
| 6621145 | Semiconductor device having a metal-semiconductor junction with a reduced contact resistance A metal-semiconductor junction comprises a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm-3 | 09/16/2003 |
| 6596636 | ALD method to improve surface coverage A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substra... | 07/22/2003 |
| 6590251 | Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors Semiconductor films include insulating films including contact holes in semiconductor substrates, capacitors comprising lower electrodes formed on conductive material films in the contact holes, high dielectric films formed on the lower electrodes and upp... | 07/08/2003 |
| 6569501 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and ot... | 05/27/2003 |
| 6562707 | Method of forming a semiconductor device using selective epitaxial growth A method of forming a semiconductor device using selective epitaxial growth (SEG) is provided. This method includes forming an insulating layer pattern having a window on a semiconductor substrate. The window exposes a predetermined region of the semicond... | 05/13/2003 |
| 6559472 | Film composition A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substra... | 05/06/2003 |
| 6555429 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device In a semiconductor device including a plurality of memory cells, a deposition preventing film is formed on an interlayer insulating film in which a plurality of holes are formed, or a seed film is selectively formed on the interlayer insulating film and o... | 04/29/2003 |
| 6548875 | Sub-tenth micron misfet with source and drain layers formed over source and drains, sloping away from the gate A semiconductor device having a low channel resistance without degrading transistor characteristics even for the 0.1 μm generation or later, and also: a manufacturing method of the device. The method includes fabricating source/drain electrodes and a gat... | 04/15/2003 |
| 6544886 | Process for isolating an exposed conducting surface A method of isolating an exposed conductive surface. An aluminum layer (130) is selectively formed over the exposed conductive (106) surface (e.g., Cu) but not over the surrounding dielectric (110) surface using a thermal CVD process. The aluminum layer (... | 04/08/2003 |
| 6537901 | Method of manufacturing a transistor in a semiconductor device There is disclosed a method of manufacturing a transistor in a semiconductor device. The present invention forms a Ta film or a TaNx film at a low temperature or forms a first TaNx film in which the composition(x) of nitrogen is 0.45~0.55, on a gate insul... | 03/25/2003 |
| 6537621 | Method of forming a titanium film and a barrier film on a surface of a substrate through lamination A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method ... | 03/25/2003 |
