Class 257/E21.159 - Deposition of conductive or insulating material for electrode conducting electric current (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.158. This subclass
No. of patents: 34
Last issue date: 05/13/2008

Number	Title	Issue Date
7371683	Method for carrying object to be processed A method for carrying an object to be processed used for a processing apparatus which comprises a plurality of process chambers including a specific process chamber for a process in which the object in process is easily contaminated and a carrying mechanism having t...	05/13/2008
7368381	Methods of forming materials The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor ...	05/06/2008
7306962	Electroformed metallization A method is provided for electroforming metal integrated circuit structures. The method comprises: forming an opening such as a via or line through an interlevel insulator, exposing a substrate surface; forming a base layer overlying the interlevel insulator and sub...	12/11/2007
7307010	Method for processing a thin semiconductor substrate A method for processing a semiconductor substrate less than 200 μm thick has been provided. The substrate has one or a plurality of semiconductor elements, which may be identical or different. The substrate is arranged onto a chuck during processing, the front side...	12/11/2007
7273812	Microprobe tips and methods for making Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may b...	09/25/2007
7241689	Microprobe tips and methods for making Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may b...	07/10/2007
7148102	Methods of forming buried bit line DRAM circuitry A method of forming buried bit line DRAM circuitry includes collectively forming a buried bit line forming trench, bit line vias extending from the bit line forming trench, and memory array storage node vias within a dielectric mass using only two masking steps. Con...	12/12/2006
7084055	Method for manufacturing semiconductor integrated circuit device It is desirable to prevent breakage and separation of wiring of a semiconductor integrated circuit device, such as a bit-line of a DRAM. To accomplish this, disclosed is a method in which, e.g., a high density plasma silicon oxide film is deposited on wirings (e.g.,...	08/01/2006
6246586	Method and apparatus for manufacturing a thin film, thin-film laminate, and electronic parts In a method wherein, before forming a thin film of, for example, metal on a supporting base in a vacuum, a vapor stream of patterning material for forming a pattern in the thin film is applied from nozzle holes, and the thin film is formed after this liqu...	06/12/2001
6136698	Method of increasing contact area of a contact window A method is provided to increase the contact area of a contact window. In this method, the contact area is mainly increased by a concavity which is formed by first forming a thin oxide layer in the contact region using local oxidation, then further by rem...	10/24/2000
6071676	Method of deposition There is described a method of chemically depositing a substance. The method is of utility in the direct manufacture of integrated circuits and in the manufacture of a photomask for use in production of integrated circuits. The method involves the use of ...	06/06/2000
5821017	Method of deposition There is described a method of chemically depositing a substance. The method is of utility in the direct manufacture of integrated circuits and in the manufacture of a photomask for use in production of integrated circuits. The method involves the use of ...	10/13/1998
5534311	Production of structures by electrostatically-focused deposition Structures having a controlled three-dimensional geometry are deposited by lectrostatically focused deposition using charged particle beam and gaseous precursors, or polarizable precursors with or without a charged particle beam. At least one apertured ele...	07/09/1996
5492861	Process for applying structured layers using laser transfer In order to provide a process for applying structured layers of a functional structure of a semiconductor component, with which structured layers of a functional structure of a semiconductor component can be produced as simply as possible and with as litt...	02/20/1996
5358903	Contact of a semiconductor device and its manufacturing process A contact of a semiconductor device and its manufacturing process are disclosed. A first conducting line, a first insulating layer, and a second conducting line are formed sequentially on a semiconductor substrate. And then, a second insulating layer is d...	10/25/1994
4686000	Self-aligned contact process An improved process for self-aligned contact window formation in an integrated circuit leaves a "Stick" of etch stop on vertical sidewall surfaces to be protected. The technique includes, in the preferred embodiment, a layer of oxide over active areas and...	08/11/1987
4495026	Method for manufacturing metallized semiconductor components A method for the manufacture of metallized semiconductor components, particularly power semiconductor components such as thyristors in which the semiconductor substrate is covered with at least three metal layers including a base layer attached to the sub...	01/22/1985
4411929	Method for manufacturing semiconductor device A method for manufacturing a semiconductor integrated circuit device having contact apertures with finely-controlled dimensions of 1 μm or less. An ion bombardment layer is formed by bombarding predetermined portions of the substrate of the semiconductor...	10/25/1983
4393576	Method of producing electrical contacts on a silicon solar cell A method of producing electrical contacts on a Silicon Solar Cell comprises stamping contact shapes from a carrier with a metallic film or foil adhered thereto and applying the stamped out film or foil to the silicon surface to adhere thereto while removi...	07/19/1983
4375007	Silicon solar cells with aluminum-magnesium alloy low resistance contacts An Al-Mg alloy is mixed with a Ni-Sb alloy or Al, in powder form, to form a thick-film metallizing paste useful for making low resistance electrically conductive contacts to a silicon solar cell coated with Si3 N4....	02/22/1983
4361718	Silicon solar cell N-region metallizations comprising a nickel-antimony alloy The n-type region of a silicon solar cell is metallized with a nickel-antimony alloy to provide an external contact....	11/30/1982
4347262	Aluminum-magnesium alloys in low resistance contacts to silicon An Al-Mg alloy is mixed with a Ni-Sb alloy or Al, in powder form, to form a thick-film metallizing paste useful for making low resistance electrically conductive contacts to a silicon solar cell coated with Si3 N4....	08/31/1982
4342795	Solar cell metallizations comprising a nickel-antimony alloy A silicon solar cell is metallized with a nickel-antimony alloy to provide external contacts....	08/03/1982
4293451	Screenable contact structure and method for semiconductor devices An ink composition for deposition upon the surface of a semiconductor device to provide a contact area for connection to external circuitry is disclosed, the composition comprising an ink system containing a metal powder, a binder and vehicle, a metal fri...	10/06/1981
4242696	Method of forming a contact on the surface of a semiconductor body by serigraphy and body obtained by means of this method A method of forming a contact on the surface of a semiconductor by a serigraphy treatment in which a doped conductive paste is provided in a first deposition, and then a second deposition containing no dopant is provided at least partly on the first depos...	12/30/1980
4219448	Screenable contact structure and method for semiconductor devices An ink composition for deposition upon the surface of a semiconductor device to provide a contact area for connection to external circuitry is disclosed, the composition comprising an ink system containing a metal powder, a binder and vehicle, and a metal...	08/26/1980
4163678	Solar cell with improved N-region contact and method of forming the same An improved solar cell, and method of forming the same, characterized by a semiconductor silicon wafer of P-type material having diffused therein a shallow N-type region, a sintered silver contact affixed to the surface of the N-type region at the outer s...	08/07/1979
4153907	Photovoltaic cell with junction-free essentially-linear connections to its contacts Admixed glass frits and conductor-forming materials are applied directly to selected portions of the smooth-surface, doped areas of photovoltaic cells, and then are fired to form electrical contacts for those smooth-surface, doped areas. Those conductor-f...	05/08/1979
4140814	Plasma deposition of transparent conductive layers A transparent conductive layer of SnO2 is deposited on a substrate by an RF-plasma assisted chemical vapor reaction of CO2 with an organic tin compound, such as tetramethyl tin, for example. A CCD optical imager is fabricated, using ...	02/20/1979
4028145	Stoichiometric annealing of mercury cadmium telluride The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by annealing the mercury cadmium telluride in the presence of cadmium vapor....	06/07/1977
4011583	Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The ...	03/08/1977
4004341	Method of manufacturing field-effect transistors designed for operation at very high frequencies, using integrated techniques A method of manufacturing, making it possible to effect the simultaneous batch production in particular of field-effect transistors operating at frequencies in excess of 30 Gc/s, whose source and drain constitute two very narrow and very closely spaced ba...	01/25/1977
3981073	Lateral semiconductive device and method of making same A lateral semiconductive device, such as a Gunn device or Impatt diode, is fabricated by depositing a barrier layer of beryllia over an epitaxial grown layer of N- type semiconductive material on an N+ type semiconductive wafer. The wafer is then thinned ...	09/21/1976
3965279	Ohmic contacts for group III-V n-type semiconductors A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The ...	06/22/1976

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Class 257/E21.159 - Deposition of conductive or insulating material for electrode conducting electric current (EPO)