Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 7303967 | Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an... | 12/04/2007 |
| 6703295 | Method and apparatus for self-doping contacts to a semiconductor The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simulta... | 03/09/2004 |
| 6664631 | Apparatus for self-doping contacts to a semiconductor The present invention provides a system for self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the s... | 12/16/2003 |
| 6632730 | Method for self-doping contacts to a semiconductor The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simulta... | 10/14/2003 |
| 6383286 | Method of making semiconductor super-atom and aggregate thereof The present invention probides a novel method for fabricating a semiconductor super-atom and an aggregate thereof, which allows the formation of a semiconductor nano-structure with a diameter in the order of 10 nm, which is meant for constituting a core, ... | 05/07/2002 |
| 4364778 | Formation of multilayer dopant distributions in a semiconductor A method of making solid state devices having multilayer dopant distributions, including p-p+ and n-n+ junctions, etc. A semiconductor body is rapidly melted, typically by a laser, electron beam, or ion beam. Present in the melt is a first dopant having a... | 12/21/1982 |
| 4211587 | Process for producing a metal to compound semiconductor contact having a potential barrier of predetermined height A process for producing a "metal to compound semiconductor" contact having a potential barrier of predetermined height. By this is meant a Schottky contact or an ohmic contact. The process comprises, before deposition of the metal, perfectly cleaning the ... | 07/08/1980 |
| 4157559 | Coaxial nuclear radiation detector with deep junction and radial field gradient Germanium radiation detectors are manufactured by diffusing lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430° and is monitored by a quartz half cell containing a ... | 06/05/1979 |
| 4060432 | Method for manufacturing nuclear radiation detector with deep diffused junction Germanium radiation detectors are manufactured by diffusing lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430° C. and is monitored by a quartz half cell containing... | 11/29/1977 |
| 4024029 | Electrodeposition The invention concerns a method of electrodeposition onto a semiconductor. The surface lattice structure of the semiconductor is first disturbed, by an ion beam or otherwise, and then the semiconductor is immersed in an electroplating solution. When the s... | 05/17/1977 |
| 4021269 | Post diffusion after temperature gradient zone melting Disclosed is a technique useful in the manufacture of semiconductor devices. When a semiconductor device is manufactured by the temperature gradient zone melting process, it is subjected to a short diffusion cycle following thermomigration. The cycle smoo... | 05/03/1977 |
| 3972741 | Multiple p-n junction formation with an alloy droplet A droplet of alloy material containing at least two semiconductor dopant type elements, each of which has a different ratio of diffusivity, is thermomigrated by a thermal gradient zone melting process through a body of semiconductor material leaving behin... | 08/03/1976 |
