Class 257/E21.152 - Diffusion into or out of Group III-V compound (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.144. This subclass
No. of patents: 52
Last issue date: 10/21/2008

«First «Previous1 2 Next»Last»

Number	Title	Issue Date
7439165	Method of fabricating tensile strained layers and compressive strain layers for a CMOS device A process for forming both tensile and compressive strained silicon layers to accommodate channel regions of MOSFET or CMOS devices has been developed. After formation of shallow trench isolation structures as well as application of high temperature oxidation and ac...	10/21/2008
7439609	Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal so...	10/21/2008
7303967	Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an...	12/04/2007
7282428	Method for solid phase diffusion of zinc into an InP-based photodiode and an InP photodiode made with the method In order to form a p-region in an InP-based photodiode, zinc doping must be performed. Due to the current trend toward the implementation of larger-sized InP wafers, there is a need for a solid phase diffusion method in which a ZnO thin film is applied to an epitaxi...	10/16/2007
6686217	Compound semiconductor device manufacturing method A method of forming a compound semiconductor device. The method includes the steps of depositing a film that contains zinc oxide and silicon oxide to contain the zinc oxide by 70 wt % or more on compound semiconductor layer as a diffusion source, and diff...	02/03/2004
6541796	Opto-electronic device with self-aligned ohmic contact layer An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact lay...	04/01/2003
6531379	High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the pr...	03/11/2003
6489635	Epitaxially grown p-type diffusion source for photodiode fabrication A p-i-n photodiode included a heavily dopes epitaxially grown layer of semiconductor. The photodiode is comprised of heterojunctions of epitaxial material grown on an InP semiconductor substrate (12, 14). A heavily doped layer (20) is patterned on top of ...	12/03/2002
6444552	Method of reducing the conductivity of a semiconductor and devices made thereby Disclosed is a method of reducing the conductivity/charge of a layer of group III-V semiconductor doped with Sn. The method includes the steps of: forming an region of SiO2 on the semiconductor layer; annealing at least the semiconductor layer ...	09/03/2002
6291328	Opto-electronic device with self-aligned ohmic contact layer An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact lay...	09/18/2001
6251755	High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the pr...	06/26/2001
5888890	Method of manufacturing field effect transistor A method of manufacturing a field effect transistor according to the present invention is disclosed including the steps of preparing a semiconductor substrate; forming an insulating film for use as high concentration on the semiconductor substrate; formin...	03/30/1999
5700714	Diffusion mask and fabrication method for forming pn-junction elements in a compound semiconductor substrate A pn-junction element is formed in a compound semiconductor substrate by depositing an aluminum-nitride film on the surface of the substrate, patterning the aluminum-nitride film to form a diffusion mask, depositing a diffusion source film on the diffusio...	12/23/1997
5656511	Manufacturing method for semiconductor device A manufacturing method for a semiconductor device is preferably used for a semiconductor device using SOI (Silicon on Insulation) technology. At minimum, the method includes the following steps: the step of forming a gate electrode on a substrate by using...	08/12/1997
5557141	Method of doping, semiconductor device, and method of fabricating semiconductor device A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in ...	09/17/1996
5352628	Method of forming diffusion region of semiconductor device by solid phase diffusion An impurity is diffused into semiconductor epitaxial layers of a semiconductor device from a solid phase diffusion source through an additional thin film layer disposed on the epitaxial layers of the structure. After the diffusion, the thin film layer is ...	10/04/1994
5350709	Method of doping a group III-V compound semiconductor A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semi...	09/27/1994
5314833	Method of manufacturing GaAs metal semiconductor field effect transistor A method of manufacturing a GaAs field effect transistor comprises depositing a silicon thin film 202 on a semi-insulating semiconductor substrate 201, forming a first sensitive film 203 by a photolithography to define channel areas and ion-implanting n-t...	05/24/1994
5296394	Manufacturing method of GaAs metal semiconductor FET A manufacturing method of GaAs metal semiconductor FET is disclosed. The method comprises the steps of: preparing a GaAs substrate; depositing a silicon layer on the GaAs substrate; forming a first photoresist pattern on the silicon layer by means of well...	03/22/1994
5275969	Semiconductor laser A method for diffusing a P type impurity into a semiconductor includes the steps of selectively implanting ions of a first P type impurity into a semiconductor substrate and thermally diffusing a second P type impurity into the semiconductor substrate con...	01/04/1994
5248626	Method for fabricating self-aligned gate diffused junction field effect transistor A method for fabricating a self-aligned, gate diffused junction field eff transistor is provided which includes the steps of forming an n-type layer on an indium phosphide, semi-insulating substrate; forming spaced apart source/drain metal contacts on th...	09/28/1993
5225370	Method of diffusing P type impurity A method of diffusing a P type impurity into a semiconductor substrate includes selectively implanting ions of a first P type impurity into a semiconductor substrate and thermally diffusing a second P type impurity into the semiconductor substrate at leas...	07/06/1993
5196369	Method of producing a light emitting diode array device A method of fabricating light emitting diode array devices is provided, said method comprising the steps of layering through crystal growth the second semiconductor layer with an impurity serving as the diffusion source on the first semiconductor layer, r...	03/23/1993
5188978	Controlled silicon doping of III-V compounds by thermal oxidation of silicon capping layer The method for silicon doping of III-V compounds by depositing a layer of silicon on the surface of a III-V compound substrate and subjecting the silicon capped substrate to thermal oxidation at temperatures and in an oxidizing atmosphere sufficient to ca...	02/23/1993
5182229	Method for diffusing an n type impurity from a solid phase source into a III-V compound semiconductor A method for diffusing n type impurities from a solid phase source into a III-V compound semiconductor includes depositing an amorphous or polycrystalline selenium or sulfur film on the III-V compound semiconductor and diffusing selenium or sulfur from th...	01/26/1993
5162256	Process for producing doped semiconductor layers A multiplicity of thin layers are applied on top of each other having alternately comparatively high concentrations of charge carriers and no doping. The thickness and the concentration of charge carriers of the individual layers being are proportioned in...	11/10/1992
5126281	Diffusion using a solid state source Method for deposit of a p type dopant from a dopant layer into a predetermined region of a III-V semiconductor layer or multiple layers. The p type dopant is deposited in very high concentration in a semiconductor layer adjacent to the predetermined regio...	06/30/1992
5122478	Impurity diffusion method A method for diffusing an impurity into a semiconductor includes producing a first semiconductor layer which does not include an element which alloy-reacts with the impurity on a surface of a compound semiconductor which includes a constitutional element ...	06/16/1992
5119150	Compound semiconductor structure including layer limiting silicon diffusion A semiconductor structure includes a compound semiconductor substrate, a compound semiconductor diffusion limiting layer containing aluminum, disposed on the substrate, and having a larger aluminum content than the substrate, a compound semiconductor laye...	06/02/1992
5047366	Method of diffusing silicon into compound semiconductors and compound semiconductor devices A method of diffusing Si into compound semiconductor from a Si film provided on a surface region of the compound semiconductor, wherein the diffusion is conducted with providing a diffusion stopper layer at a position of predetermined depth from the surfa...	09/10/1991
5027187	Polycrystalline silicon ohmic contacts to group III-arsenide compound semiconductors A polycrystalline silicon layer forms an Ohmic contact to a group III-arsenide compound semiconductor substrate by heating the substrate. The polysilicon contact out-diffuses silicon into the substrate to form an N++ region....	06/25/1991
5023199	Method of diffusing Zn into compound semiconductor A method of diffusing Zn into AlGaInP using Alx G1-x As (0ࣘxࣘ1) as a diffusion stopping at a position of predetermined depth from the surface of the AlGaInP, or using Alx Ga1-x As (0ࣘxࣘ1) as a diffusion ...	06/11/1991
4865923	Selective intermixing of layered structures composed of thin solid films Synthetic layered structures, which may be semiconductor structures, are modified, both laterally and vertically, to provide novel electronic, optoelectronic, and optical properties. This is accomplished by selective intermixing of such layered structures...	09/12/1989
4843033	Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source A method of diffusion of dopants (e.g. zinc) into III-V substrates (e.g. GaAs) using metal silicide and dopants (e.g. Wx Siy :Zn) is disclosed. A cap layer (e.g. SiO2 or Si3 N4) is also used. The zinc...	06/27/1989
4824798	Method of introducing impurity species into a semiconductor structure from a deposited source A thin film bilayer composite source comprises a deposited impurity source layer, e.g. Si or Sb, heavily doped with a diffusion enabling agent, e.g. As, and capped with a passivating layer, e.g. Si3 N4, SiO2, AlN or SiO	04/25/1989
4774195	Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of activated hydrogen The invention relates to a process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies, with fission products which are to be withdrawn during the process being fo...	09/27/1988
4746398	Gallium arsenide planar tunnel diode method A gallium arsenide tunnel diode is fabricated using planar techniques from a wafer of gallium arsenide that has been heavily doped to form a P region. Tin is plated onto an exposed section of a surface of the wafer and then melted to cause individual tin ...	05/24/1988
4743569	Two step rapid thermal anneal of implanted compound semiconductor A two step rapid thermal anneal (RTA) has been studied for activating Be implanted GaAs, where a short duration high temperature step is used to electrically activate the Be followed by a longer low temperature anneal for lattice re-growth. PN diodes show...	05/10/1988
4731338	Method for selective intermixing of layered structures composed of thin solid films A multilayer structure formed of two or more separate layers of different materials can be selectively intermixed so as to become compositionally transmuted, such that the distinction between the different original materials is lost, at least partially. T...	03/15/1988
4672414	Planar heterojunction bipolar device and method Vertical AlGaAs heterojunction bipolar transistors (30) with planar structure together with fabrication methods therefor are disclosed. For an emitter (44) on top structure, the contacts (46) to the base (38) are formed by a diffusion of zinc dopants from...	06/09/1987

«First «Previous1 2 Next»Last»

PatentStorm

Bizarre Patents

PatentStorm News

Class 257/E21.152 - Diffusion into or out of Group III-V compound (EPO)