Class 257/E21.146 - Using predeposition of impurities into the semiconductor surface, e.g., from gaseous phase (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.145. This subclass
No. of patents: 37
Last issue date: 12/04/2007

Number	Title	Issue Date
7303967	Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an...	12/04/2007
7214618	Technique for high efficiency metalorganic chemical vapor deposition A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced int...	05/08/2007
6693024	Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating The semiconductor component is fabricated on the basis of a semiconductor body with a first and a second surface. A multiplicity of pores are formed in the semiconductor body. The pores extend into the semiconductor body proceeding from the first surface ...	02/17/2004
6566208	Method to form elevated source/drain using poly spacer A method for forming a sub-quarter micron MOSFET having an elevated source/drain structure is described. A gate electrode is formed over a gate dielectric on a semiconductor substrate. Ions are implanted into the semiconductor substrate to form lightly do...	05/20/2003
6555451	Method for making shallow diffusion junctions in semiconductors using elemental doping A method is provided for making ultra-shallow diffused junctions using an elemental dopant. A semiconductor wafer is cleaned for providing a clean reaction surface. The cleaned wafer in loaded onto a stage located in a doping system. A quantity of element...	04/29/2003
6461948	Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam A method of doping silicon that involves placing a silicon wafer in spaced relationship to a solid phosphorus dopant source at a first temperature for a time sufficient to deposit a phosphorus-containing layer on the surface of the wafer and subsequently ...	10/08/2002
6248651	Low cost method of fabricating transient voltage suppressor semiconductor devices or the like Transient voltage suppressor semiconductor devices and other semiconductor devices having rigorous requirements for the diffusion and depth of impurities to produce P-N junctions can be fabricated at surprisingly low costs without sacrifice of functional ...	06/19/2001
5871826	Proximity laser doping technique for electronic materials This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film ...	02/16/1999
5766973	Method for manufacturing a semiconductor arrangement by introducing crystal disorder structures and varying diffusion rates In a semiconductor arrangement and a method for manufacturing a semiconductor arrangement, varying diffusion rates are attained by introducing crystal disorder structures into a silicon crystal. The semiconductor structure includes a semiconductor wafer w...	06/16/1998
5565377	Process for forming retrograde profiles in silicon A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses...	10/15/1996
5472909	Method for the preparation of discrete substrate plates of semiconductor silicon wafer An efficient method is proposed for the preparation of a silicon single crystal wafer for discrete semiconductor devices, such as transistors, deeply doped with a dopant on one surface, the other surface being mirror-polished. Different from the conventio...	12/05/1995
5316969	Method of shallow junction formation in semiconductor devices using gas immersion laser doping Shallow regions are formed in a semiconductor body by irradiating the surface region with a pulsed laser beam in an atmosphere including the dopant. The pulsed laser beam has sufficient intensity to drive in dopant atoms from the atmosphere but insufficie...	05/31/1994
5308789	Method of preparing diffused silicon device substrate In a method of preparing a diffused silicon device substrate for use in the fabrication of a MOS power device, a drive-in diffusion step is followed by a thermal donor formation heat treatment which is achieved by heating the silicon device substrate at a...	05/03/1994
5286660	Method for doping a semiconductor wafer having a diffusivity enhancement region A diffusivity and a solubility of dopant atoms are increased within a semiconductor wafer (30). A portion (36) of the semiconductor wafer (30) is disrupted by a technique of ion implantation thereby forming a defect layer (36). A predeposition layer (37) ...	02/15/1994
5081050	Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities In a high-reverse-voltage GTO thyristor, a negative beveling (6) with comparatively high beveling angle (଱) is possible as edge contouring as a result of separating the p-type base layer into a central p-type base layer (4) of small depth and high e...	01/14/1992
5003368	Turn-off thyristor In a high-reverse-voltage GTO thyristor, a negative beveling (6) with comparatively high beveling angle (଱) is possible as edge contouring as a result of separating the p-type base layer into a central p-type base layer (4) of small depth and high e...	03/26/1991
4820656	Method for producing a p-doped semiconductor region in an n-conductive semiconductor body A method for producing a p-doped semiconductor region in an n-conductive semiconductor body by means of diffusion using a combination of both aluminum and boron as dopants. The semiconductor body is positioned within a hollow silicon member which itself i...	04/11/1989
4757031	Method for the manufacture of a pn-junction having high dielectric strength A method for the manufacture of a pn-junction having high dielectric strength starting with a doped semiconductor body of a first conductivity type. A zone of a second conductivity type is formed in the semiconductor body inwardly from a surface thereof. ...	07/12/1988
4613381	Method for fabricating a thyristor In a method for fabricating a thyristor in which n-type impurities are diffused in a p-base of a pnp wafer to form an n+ -emitter, the step of diffusing the n-type impurities for forming the n+ -emitter has the conditions which are s...	09/23/1986
4588454	Diffusion of dopant into a semiconductor wafer A process for doping a semiconductor material is performed during a deposition phase in a plurality of steps, first at a relatively low temperature to form a high concentration glass formation layer of the dopant on a semiconductor wafer at a high rate, a...	05/13/1986
4514440	Spin-on dopant method A single step method for boron dopant diffusion implementing both deposition and drive-in diffusions in one furnace process is provided. By using a spin-on dopant in a diffusion furnace with pyrogenic steam and thermal ramping capabilities, sheet resistiv...	04/30/1985
4511413	Process for forming an IC wafer with buried Zener diodes The new process makes it possible to produce stable buried Zener diodes in large-sized wafers where slow ramping of diffusion temperatures is required to avoid crystal damage and other adverse effects. The process includes an initial deep diffusion of p t...	04/16/1985
4391658	Method for manufacturing semiconductor substrate A method for manufacturing a semiconductor substrate comprising the steps of forming on all surfaces of a raw semiconductor substrate an impurity layer of the same conductivity type as the raw semiconductor substrate and forming a first insulating film on...	07/05/1983
4305760	Polysilicon-to-substrate contact processing A process for forming polysilicon-to-substrate contacts. The process permits the use of a polysilicon-to-substrate contact mask and eliminates the exposure of the substrate in the contact regions to the polysilicon etch. The polysilicon contact-forming co...	12/15/1981
4266990	Process for diffusion of aluminum into a semiconductor A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube fo...	05/12/1981
4234361	Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer The invention relates to thin silicon membranes formed in layers of silicon such as are normally utilized as substrates in the manufacture of integrated electronic circuits. The thin membranes constructed in accordance with the invention are capable of de...	11/18/1980
4210472	Manufacturing process of semiconductor devices Process of manufacturing semiconductor devices by providing on the surface of a substrate of one conductivity at first only a covering with a doping agent of the other conductivity and then, after the building of mesas, the PN-junction is formed by diffus...	07/01/1980
4149915	Process for producing defect-free semiconductor devices having overlapping high conductivity impurity regions A process for fabricating devices having overlapping heavily doped impurity regions of opposite conductivity wherein the formation of crystallographic faults emanating from the overlapping regions is eliminated. It has been discovered that crystallographi...	04/17/1979
4133701	Selective enhancement of phosphorus diffusion by implanting halogen ions An improved method of making bipolar monolithic integrated circuits by successive diffusions of boron and phosphorus. Selective halogen ion implantation is used to locally specifically enhance phosphorus diffusion. The halogen implant is performed prior t...	01/09/1979
4105476	Method of manufacturing semiconductors Method of fabricating a high voltage (VCED = 800 volts) PNP Power Transistor by a triple diffusion technique....	08/08/1978
4043849	Planar diffusion method for an I² L circuit including a bipolar analog circuit part This relates to a method of producing a monolithic integrated I2 L circuit including a bipolar analog circuit part. In order to realize good current gain values in the I2 L transistors as well as high collector breakdown voltages in ...	08/23/1977
4030952	Method of MOS circuit fabrication An improved method of MOS circuit fabrication includes the consecutive steps of formation of a selected material on the surface of an underlying substrate, removal of the selected material from selected portions of the underlying substrate, and formation ...	06/21/1977
4009058	Method of fabricating large area, high voltage PIN photodiode devices The body of a PIN photodiode is of a silicon semiconductor material. The PIN photodiode has a large area incident surface on which light impinges and is operated at high voltages. In the fabrication of a PIN photodiode, as described, a high concentration ...	02/22/1977
4001050	Method of fabricating an isolated p-n junction A method of forming dielectrically isolated islands of semiconductor material on which discrete devices may be formed is disclosed. A wafer of semiconductive material is provided with an oxide layer and, by ion implantation, is lightly doped after which, ...	01/04/1977
3972838	Composition for diffusing phosphorus A phosphorus nitride-silicon oxide composition having good thermal stability and diffusion characteristics for use as a diffusant source of n-type impurities for a semi-conductor device....	08/03/1976
3966515	Method for manufacturing high voltage field-effect transistors A method of manufacturing field-effect transistors is disclosed which includes the steps of growing an epitaxial layer on a substrate wafer, forming channels of the desired conductivity on the wafer, forming the gate electrodes on the wafer and then formi...	06/29/1976
3948695	Method of diffusing an impurity into semiconductor wafers A method of diffusing an impurity into semiconductor wafers, wherein the semiconductor wafers and sources of the impurity are arranged in a pressure-reduced vessel or a vacuum vessel with their surfaces opposed, and the vessel is heated to deposit the imp...	04/06/1976

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Class 257/E21.146 - Using predeposition of impurities into the semiconductor surface, e.g., from gaseous phase (EPO)