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| Number | Title | Issue Date |
| 7303967 | Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an... | 12/04/2007 |
| 6444553 | Junction formation with diffusion barrier for silicide contacts and method for forming Method and apparatus are provided for a semiconductor device including a junction and contact having a diffusion barrier to control silicidation of a silicon substrate. A dopant is applied in excess of an amount required to form a junction and the dopant ... | 09/03/2002 |
| 6433397 | N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same An N-channel metal oxide semiconductor (NMOS) driver circuit (and method for making the same), includes a boost gate stack formed on a substrate and having a source and drain formed by a low concentration N-type implantation, and an N-driver coupled to th... | 08/13/2002 |
| 6372589 | Method of forming ultra-shallow source/drain extension by impurity diffusion from doped dielectric spacer A method of fabricating an integrated circuit (IC) with source and drain extension regions. Advantageously, the source and drain extension regions are formed without damage related to integrated circuit implant techniques. Damage is avoided by using solid... | 04/16/2002 |
| 6355544 | Selective high concentration doping of semiconductor material utilizing laser annealing Extremely high dopant concentrations are uniformly introduced into a semiconductor material by laser annealing aided by an anti-reflective coating (ARC). A spin-on-glass (SOG) film containing dopant is formed on top of the semiconductor material. An ARC i... | 03/12/2002 |
| 6333230 | Scalable high-voltage devices A method of fabricating a semiconductor device comprising: forming a trench on the face of a silicon substrate of a first conductivity type; depositing a conformal silicon layer of a second conductivity type into the trench; etching away the silicon layer... | 12/25/2001 |
| 6207520 | Rapid thermal anneal with a gaseous dopant species for formation of lightly doped regions Rapid thermal anneal with a gaseous dopant species for formation of a shallow lightly doped region is disclosed. In one embodiment of the invention, a method includes four steps. In the first step, at least one layer is applied over at least one gate over... | 03/27/2001 |
| 5969398 | Method for producing a semiconductor device and a semiconductor device A method for producing a semiconductor device which comprises a step for forming a gate electrode on a main surface of a semiconductor substrate via a gate oxide film, and a step for directing plasma ions with a gas mixture comprising a first gas containi... | 10/19/1999 |
| 4012235 | Solid phase epitaxial growth A solid phase epitaxially grown semi-conductor is described wherein a thin film of a semi-conductor material together with a thin film dopant are transported through a metal film onto a substrate, using a temperature below the eutectic temperature for the... | 03/15/1977 |
| 4006046 | Method for compensating for emitter-push effect in the fabrication of transistors A semiconductor wafer having a base dopant source disposed on its surface receives a surface coating consisting of, for example, a silicon nitride film. An emitter opening is formed in the silicon nitride surface coating and a portion of the base dopant s... | 02/01/1977 |
