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| Number | Title | Issue Date |
| 7442623 | Method for manufacturing bonded substrate and bonded substrate manufactured by the method A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlappi... | 10/28/2008 |
| 7405484 | Semiconductor device containing stacked semiconductor chips and manufacturing method thereof An adhesive film is formed on an electrode film, and a coating film is formed thereon. Nickel, chrome, molybdenum, tungsten, aluminum or an alloy of them is used as a constituent material of the adhesive film. Gold, silver, platinum or an alloy of them is used as a ... | 07/29/2008 |
| 7303967 | Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an... | 12/04/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7247879 | Semiconductor integrated circuit device having particular testing pad arrangement In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for p... | 07/24/2007 |
| 7199064 | Plasma processing method and apparatus With evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a hi... | 04/03/2007 |
| 7144808 | Integration flow to prevent delamination from copper The present invention provides, in one embodiment, method of forming a barrier layer 300 over a semiconductor substrate 110. The method comprises forming an opening 120 in an insulating layer 130 located over a substrate thereby uncovering an underlying copper layer... | 12/05/2006 |
| 6956266 | Structure and method for latchup suppression utilizing trench and masked sub-collector implantation A method and structure for an integrated circuit comprising a substrate of a first polarity; a trench structure in the substrate; a well region of a second polarity abutting the trench structure; and a heavily doped region of the second polarity abutting the trench ... | 10/18/2005 |
| 6730548 | Method of fabricating a thin film transistor A method of fabricating a thin film transistor for liquid crystal display is provided. A polysilicon island and a gate insulating layer covered on the polysilicon island are formed on a substrate. A metal layer is formed on the gate insulating layer. A pair of trenc... | 05/04/2004 |
| 6651582 | Method and device for irradiating an ion beam, and related method and device thereof When ion beam 14 is irradiated onto a substrate 2 to conduct processing such as ion injection, plasma 30 emitted from a plasma generating device 20 is supplied to a portion close to the substrate 2 to suppress electric charging on a substrate surface caus... | 11/25/2003 |
| 6649308 | Ultra-short channel NMOSFETS with self-aligned silicide contact The ultra-short channel transistor in a semiconductor substrate includes a gate structure that is formed on the substrate. Side-wall spacers are formed on the side walls of the gate structure as an impurities-diffusive source. Source and drain regions are... | 11/18/2003 |
| 6624049 | Semiconductor device and method of manufacturing the same Catalytic elements such as Ni are intentionally combined with defects that remain inside of a semiconductor substrate or thin film so that the energy state of the defects comes to a stable state. In this state, a heat treatment is conducted in an atmosphe... | 09/23/2003 |
| 6548381 | Ion beam irradiation apparatus and method of igniting a plasma for the same When a plasma is ignited in a plasma generator, an ion beam is made to run in the plasma generator, and in this state, a positive voltage with respective to ground is applied to a plasma production chamber from a DC power source. Secondary electrons are g... | 04/15/2003 |
| 6531367 | Method for forming ultra-shallow junction by boron plasma doping A method for forming an ultra-shallow junction by boron plasma doping is disclosed. A substrate is placed in a pulse type electric field. A flowing carrying gas drives boron ions in a channel above the substrate, and then a negative pulse type voltage is ... | 03/11/2003 |
| 6514838 | Method for non mass selected ion implant profile control A method for implanting a substrate face using a plasma processing apparatus (10). The method includes providing a substrate (e.g., wafer, panel) (22) on a face of a susceptor. The substrate has an exposed face, which has a substrate diameter that extends... | 02/04/2003 |
| 6511925 | Process for forming high dielectric constant gate dielectric for integrated circuit structure In accordance with the invention a high-k gate dielectric is formed by the steps of first forming a silicon oxide layer over a silicon substrate and then exposing the silicon oxide to a flux of low energy plasma containing metal ions which, when inserted ... | 01/28/2003 |
| 6489207 | Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor The present invention relates to a method of forming a very shallow source-drain (S/D) extension while simultaneously highly doping a very narrow polysilicon gate through to the gate dielectric interface. The invention also relates to the resulting semico... | 12/03/2002 |
| 6475859 | Plasma doping for DRAM with deep trenches and hemispherical grains A method of doping trench sidewall and hemispherical-grained silicon in deep trench cells to increase surface area and storage capacitance while avoiding deformation of trenches and hemispherical-grained silicon, comprising: a) Etching a deep trench struc... | 11/05/2002 |
| 6461933 | SPIMOX/SIMOX combination with ITOX option Beam implantation is combined with plasma implantation of oxygen, and possibly also internal thermal oxidation, to form a high quality buried oxide layer.... | 10/08/2002 |
| 6403453 | Dose control technique for plasma doping in ultra-shallow junction formations A method of plasma doping substrates is provided. The substrate is covered with photoresist and placed within a plasma chamber. A doping gas is introduced into the chamber and ionized. A dilutant gas is also introduced to provide better control of the tot... | 06/11/2002 |
| 6380012 | Boron difluoride plasma doping method for forming ultra-shallow junction A boron difluoride plasma doping method to form an ultra-shallow junction. A semiconductor substrate is put inside a reaction chamber and then a boron difluoride ions (BF2+) containing plasma is generated inside the chamber. A negati... | 04/30/2002 |
| 6359310 | Shallow doped junctions with a variable profile gradation of dopants Disclosed is an electrical device including a process for forming a shallow junction with a variable concentration profile gradation of dopants. The process of the present invention comprises, first providing and masking a surface on an in-process integra... | 03/19/2002 |
| 6352909 | Process for lift-off of a layer from a substrate Process for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separative interlayer comprises a thin quasi-continuous gaseous layer a... | 03/05/2002 |
| 6344404 | Method of separation films from bulk substrates by plasma immersion ion implantation A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation ("PIII") system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a s... | 02/05/2002 |
| 6274459 | Method for non mass selected ion implant profile control A method for implanting a substrate face using a plasma processing apparatus (10). The method includes providing a substrate (e.g., wafer, panel) (22) on a face of a susceptor. The substrate has an exposed face, which has a substrate diameter that extends... | 08/14/2001 |
| 6217951 | Impurity introduction method and apparatus thereof and method of manufacturing semiconductor device An impurity solid including boron as impurity and a solid sample to which boron is introduced are held in a vacuum chamber. Ar gas is introduced into the vacuum chamber to generate plasma composed of the Ar gas. A voltage allowing the impurity solid to se... | 04/17/2001 |
| 6214707 | Method of forming a doped region in a semiconductor substrate A method for implanting shallow regions in a semiconductor substrate comprises heating the backside of the substrate with a lamp or other heating method, and implanting the frontside of the substrate using plasma doping. In a further embodiment, the front... | 04/10/2001 |
| 6207537 | Method for formation of impurity region in semiconductor layer and apparatus for introducing impurity to semiconductor layer The invention relates to method of formation of an impurity region in a semiconductor layer by introducing a dopant impurity as a donor or an acceptor. The formation method comprises the steps of: mixing an impurity gas with a gas containing any one of H | 03/27/2001 |
| 6140164 | Method of manufacturing a semiconductor device A resist mask used for forming a region of aluminum is made small by ashing to form a new mask. Anodic oxidation is carried out with an anode of the region of aluminum to form porous anodic oxidation films. In this anodic oxidation step, the mask can cont... | 10/31/2000 |
| 6123774 | Apparatus and method of manufacturing semiconductor element A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ... | 09/26/2000 |
| 6109207 | Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or ... | 08/29/2000 |
| 6107641 | Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage An improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser doping technique is applied to fabricate such transistors. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates paras... | 08/22/2000 |
| 6051482 | Method for manufacturing buried-channel PMOS A method for manufacturing a buried-channel pMOSFET device that utilizes a plasma doping technique to form a very shallow P-type channel layer on the top surface of a sub-micron buried-channel pMOSFET. The buried-channel pMOSFET device formed by the metho... | 04/18/2000 |
| 6048411 | Silicon-on-silicon hybrid wafer assembly A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that... | 04/11/2000 |
| 6033973 | Ion doping device and method of cleaning ion doping system A halogen fluoride such as ClF3 is introduced into the chamber of the doping system. During the doping process, boron adhering to the inner wall of the chamber is changed into gaseous boron fluoride (such as BF3) and driven off.... | 03/07/2000 |
| 6027988 | Method of separating films from bulk substrates by plasma immersion ion implantation A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation ("PIII") system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a s... | 02/22/2000 |
| 6020223 | Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to l... | 02/01/2000 |
| 6019796 | Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to l... | 02/01/2000 |
| 6013563 | Controlled cleaning process A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles ... | 01/11/2000 |
| 6013566 | Method of forming a doped region in a semiconductor substrate A method for implanting shallow regions in a semiconductor substrate comprises heating the backside of the substrate with a lamp or other heating method, and implanting the frontside of the substrate using plasma doping. In a further embodiment, the front... | 01/11/2000 |
