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| Number | Title | Issue Date |
| 7439609 | Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal so... | 10/21/2008 |
| 7303967 | Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an... | 12/04/2007 |
| 6653248 | Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device A semiconductor layer is co-doped with two dopants. The first dopant is to generate charge carriers in the semiconductor material, and the second dopant is to promote atomic disorder within the material. When the semiconductor material is annealed, the se... | 11/25/2003 |
| 6516743 | Method and apparatus diffusing zinc into groups III-V compound semiconductor crystals An LPE (Liquid Phase Epitaxy) apparatus is diverted to a Zn-diffusion apparatus for diffusing Zn into III-V group compound semiconductor. The Zn-diffusion apparatus comprises a base plank extending in a direction, having a wafer-storing cavity for storing... | 02/11/2003 |
| 6426522 | Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device A semiconductor layer is co-doped with two dopants. The first dopant is to generate charge carriers in the semiconductor material, and the second dopant is to promote atomic disorder within the material. When the semiconductor material is annealed, the se... | 07/30/2002 |
| 6294414 | Method of fabricating heterointerface devices having diffused junctions This invention is predicated upon applicants'discovery that the quality of high performance heterointerface devices having diffused junction depends significantly on the rate of cooling after diffusing the junctions. Use of the method to fabricate a high ... | 09/25/2001 |
| 6214707 | Method of forming a doped region in a semiconductor substrate A method for implanting shallow regions in a semiconductor substrate comprises heating the backside of the substrate with a lamp or other heating method, and implanting the frontside of the substrate using plasma doping. In a further embodiment, the front... | 04/10/2001 |
| 6214708 | Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals An LPE (Liquid Phase Epitaxy) apparatus is diverted to a Zn-diffusion apparatus for diffusing Zn into III-V group compound semiconductor. The Zn-diffusion apparatus comprises a base plank extending in a direction, having a wafer-storing cavity for storing... | 04/10/2001 |
| 6133125 | Selective area diffusion control process A method for altering a dopant front profile of a dopant in a wafer is disclosed. An initial wafer is provided with an upper doped layer and a lower undoped layer. An oxide layer is grown over a portion of the wafer while a second portion of the wafer rem... | 10/17/2000 |
| 6013566 | Method of forming a doped region in a semiconductor substrate A method for implanting shallow regions in a semiconductor substrate comprises heating the backside of the substrate with a lamp or other heating method, and implanting the frontside of the substrate using plasma doping. In a further embodiment, the front... | 01/11/2000 |
| 5874320 | Method for forming P-type gallium nitride A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen ato... | 02/23/1999 |
| 5871826 | Proximity laser doping technique for electronic materials This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film ... | 02/16/1999 |
| 5585305 | Method for fabricating a semiconductor device A method for fabricating a semiconductor device includes the steps of growing a second semiconductor layer on a first semiconductor layer which is highly doped with an impurity such as Zn and diffusing the impurity concurrently with the growing step of th... | 12/17/1996 |
| 5506186 | Method of manufacturing an optoelectronic device The invention relates to a method of manufacturing an optoelectronic device. An indium phosphide part of a semiconductor body is contacted either directly or indirectly through a ternary or quaternary layer by means of a zinc diffusion. In order to improv... | 04/09/1996 |
| 5343055 | Avalanche photodiode structure with Mg doping and method An avalanche photodiode structure has a graded magnesium guard ring formed by diffusion from an organic-metallic source. Suitably masked APD layers are placed in an open flow reactor and heated while bis (cyclopentadienyl) magnesium vapor is flowed over t... | 08/30/1994 |
| 5232873 | Method of fabricating contacts for semiconductor devices A semiconductor device substrate has a major surface on which is located an insulating layer, such as silicon dioxide, having an aperture penetrating through it all the way down to the major surface. An impurity-doped plug, such as tungsten doped with zin... | 08/03/1993 |
| 5049524 | Cd diffusion in InP substrates A process for diffusing Cd into an InP substrate comprising: a. pre-heating a sealed tube containing red P and Cd3 P2 at the opening of a diffusion furnace; b. effecting the diffusion within the diffusion furnace; and c. furnace cooling the se... | 09/17/1991 |
| 4889830 | Zinc diffusion in the presence of cadmium into indium phosphide Zinc is diffused into indium phosphide in the presence of cadmium to prevent degradation of the indium phosphide surface.... | 12/26/1989 |
| 4847217 | Method for making a semiconductor device A method for producing a semiconductor device includes producing a first mask film on a main surface of a compound semiconductor wafer, patterning the first mask film and producing a second mask film so as to cover at least an end portion of the first mas... | 07/11/1989 |
| 4797371 | Method for forming an impurity region in semiconductor devices by out-diffusion The invention discloses a method including the following processes (a) through (c) for forming impurity regions in a semiconductor device (a) a process that forms at least one second conductive type impurity-doped region by doping second conductive type i... | 01/10/1989 |
| 4774195 | Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of activated hydrogen The invention relates to a process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies, with fission products which are to be withdrawn during the process being fo... | 09/27/1988 |
| 4742022 | Method of diffusing zinc into III-V compound semiconductor material Method of diffusing zinc into gallium arsenide and aluminum gallium arsenide. A wafer of gallium arsenide or aluminum gallium arsenide is placed in close proximity to a quantity of granular zinc gallium arsenide. The assemblage is heated in an open-tube f... | 05/03/1988 |
| 4725565 | Method of diffusing conductivity type imparting material into III-V compound semiconductor material Method of diffusing sulfur into gallium arsenide without degrading the surface of the gallium arsenide. A gallium arsenide wafer is placed in close proximity to a quantity of powdered gallium sulfide intermixed with powdered gallium arsenide. The assembla... | 02/16/1988 |
| 4698122 | Method of diffusion of impurities A method for selectively diffusing impurities such as zinc into the substrate of a compound semiconductor such as gallium arsenide (GaAs). The method makes use of a diffusion mask in such a manner that the thickness of the oxygen-containing layer at the i... | 10/06/1987 |
| 4592793 | Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates A process for diffusing a dopant into a III-V type semiconductor body is disclosed which comprises: (a) placing in a heating chamber which is substantially devoid of any oxidizing substance a deposition substrate possessing a dopant-containing layer which... | 06/03/1986 |
| 4545824 | Process for producing a GaAs or InP semiconductor by pre-implantation followed by transition metal diffusion Process for producing a semiconductor component by diffusion with prior ion implantation. According to the invention, an impurity of oxygen, fluorine, chlorine or bromine having chemical affinity with the diffusion impurity is implanted in the semiconduct... | 10/08/1985 |
| 4280858 | Method of manufacturing a semiconductor device by retarding the diffusion of zinc or cadmium into a device region A semiconductor device and a method for manufacturing the semiconductor device are disclosed for forming an abrupt and accurately positioned p-n junction between a substrate and a substrate-adjoining region. This is achieved in accordance with the present... | 07/28/1981 |
| 4211587 | Process for producing a metal to compound semiconductor contact having a potential barrier of predetermined height A process for producing a "metal to compound semiconductor" contact having a potential barrier of predetermined height. By this is meant a Schottky contact or an ohmic contact. The process comprises, before deposition of the metal, perfectly cleaning the ... | 07/08/1980 |
| 4075044 | Method of producing a siliceous cover layer on a semiconductor element by centrifugal coating utilizing a mixture of silica emulsions A method of producing a siliceous cover layer on a semiconductor element or wafer so that the temperature coefficient of the cover layer is approximated to the temperature coefficient of the semiconductor wafer, comprises distributing a combined emulsion ... | 02/21/1978 |
| 3977016 | Electroluminescent device and method of manufacturing same A device having an electroluminescent diode of which the two regions have a homogeneous concentration of one type of doping centers. The doping centers of the opposite type have a concentration which decreases towards the emissive surface from the junction. Ma... | 08/24/1976 |
