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| Number | Title | Issue Date |
| 7303967 | Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an... | 12/04/2007 |
| 7268037 | Method for fabricating microchips using metal oxide masks A process for modifying sections of a semiconductor includes covering the sections to remain free of doping with a metal oxide, e.g., aluminum oxide. Then, the semiconductor is doped, for example, from the gas phase, in those sections that are not covered by the alu... | 09/11/2007 |
| 7101812 | Method of forming and/or modifying a dielectric film on a semiconductor surface A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer ... | 09/05/2006 |
| 6667522 | Silicon wafers for CMOS and other integrated circuits Techniques include heating a substantially uniformly boron-doped wafer to achieve a significantly increased resistivity in a near-surface region of the wafer and forming at least one electrical circuit element in the near-surface region. Integrated circui... | 12/23/2003 |
| 6660575 | Method for forming a semiconductor device A method for forming a semiconductor device is disclosed. The method comprises the step of irradiating a laser light to a surface of a semiconductor through a mask provided on said surface in an atmosphere comprising an impurity of one conductivity type t... | 12/09/2003 |
| 6655767 | Active matrix display device An active matrix display device with a semiconductor layer, an organic layer above the semiconductor layer and a pixel electrode and a conductor layer thereon connected to the source/drain region(s).... | 12/02/2003 |
| 6645839 | Method for improving a doping profile for gas phase doping A method for improving a doping profile using gas phase doping is described. In the method, silicon nitride and/or products of decomposition from a silicon nitride deposition are introduced in a process chamber before or during the actual gas phase doping... | 11/11/2003 |
| 6635310 | Method of heat treatment A thermal processing method of the invention includes; a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having a minutely irregular profile; and a doping step of intr... | 10/21/2003 |
| 6528384 | Method for manufacturing a trench capacitor A method for manufacturing a trench capacitor uses a low-pressure gas phase doping for forming a buried plate as a capacitor plate. The use of the low-pressure gas phase doping reduces process costs and improves capacitor properties.... | 03/04/2003 |
| 6489207 | Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor The present invention relates to a method of forming a very shallow source-drain (S/D) extension while simultaneously highly doping a very narrow polysilicon gate through to the gate dielectric interface. The invention also relates to the resulting semico... | 12/03/2002 |
| 6467297 | Wafer holder for rotating and translating wafers In the method and apparatus of this invention a wafer for manufacturing semiconductor devices is held by a vortex-type substrate holder against a moveable frame during processing. Motion of the wafer is controlled with movement of the frame. The frame is ... | 10/22/2002 |
| 6426280 | Method for doping spherical semiconductors A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains ... | 07/30/2002 |
| 6424008 | Memory device having a floating gate A semiconductor memory device including a first memory having a first floating gate formed over a semiconductor substrate, a first control gate formed over and insulated from the first floating gate, a first impurity region and a second impurity region fo... | 07/23/2002 |
| 6413844 | Safe arsenic gas phase doping A method is described for safe gas phase doping a semiconductor with arsenic. The substrate including a semiconductor structure is exposed to arsine at elevated temperatures within a reaction chamber. Thereafter, prior to opening the reaction chamber, a s... | 07/02/2002 |
| 6395624 | Method for forming implants in semiconductor fabrication The present invention provides a novel method of forming implants with Projection Gas-Immersion Laser Doping (PGILD) process that overcomes the disadvantages of the prior art methods. In particular, the preferred method applies a reflective coating over f... | 05/28/2002 |
| 6358784 | Process for laser processing and apparatus for use in the same A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a meta... | 03/19/2002 |
| 6303446 | Method of making self-aligned lightly-doped-drain structure for MOS transistors A process for fabricating lightly-doped-drains (LDD) for short-channel metal oxide semiconductor (MOS) transistors. The process utilizes a pulsed laser process to incorporate the dopants, thus eliminating the prior oxide deposition and etching steps. Duri... | 10/16/2001 |
| 6284632 | Method for manufacturing semiconductor device with stagnated process gas According to the present invention, a process of the present invention is performed with stagnated process gas in a chamber. The process comprises the steps of supplying process gas into a chamber, blocking process gas entry and exit from the chamber so a... | 09/04/2001 |
| 6221726 | Process for fabricating device structures for real-time process control of silicon doping Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques.... | 04/24/2001 |
| 6124175 | Rapid thermal anneal with a gaseous dopant species Rapid thermal anneal with a gaseous dopant species is disclosed. In one embodiment, a method includes three steps. In the first step, at least one gate is formed over a semiconductor substrate. In the second step, at least one spacer for each of the gates... | 09/26/2000 |
| 6090690 | Direct gas-phase doping of semiconductor wafers using an organic dopant source A direct doping method for semiconductor wafers, comprising the steps of providing a semiconductor wafer, exposing the surface of the wafer to a process medium in order to directly dope at least a portion of the surface of the wafer, wherein the process m... | 07/18/2000 |
| 6078078 | V-gate transistor An integrated circuit and a method of making a transistor thereof are provided. The integrated circuit includes a substrate and a plurality of transistors positioned on a plurality of active areas. Each of the transistors has a gate dielectric layer with ... | 06/20/2000 |
| 6048782 | Method for doped shallow junction formation using direct gas-phase doping Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping process... | 04/11/2000 |
| 6020223 | Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to l... | 02/01/2000 |
| 6019796 | Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to l... | 02/01/2000 |
| 5998272 | Silicidation and deep source-drain formation prior to source-drain extension formation A process in accordance with the invention minimizes the number of heat steps to which an source-drain extension region is exposed, thus minimizing source-drain extension region diffusion and allowing more precise control of source-drain extension region ... | 12/07/1999 |
| 5969394 | Method and structure for high aspect gate and short channel length insulated gate field effect transistors A method and structure are provided for an IGFET which has a short conduction channel length. The short channel IGFET functions more rapidly than do longer conduction channel devices. Also the invention includes a dielectric layer with a high dielectric c... | 10/19/1999 |
| 5965915 | Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type op... | 10/12/1999 |
| 5955759 | Reduced parasitic resistance and capacitance field effect transistor A field effect transistor and method for making the same is described wherein the field effect transistor incorporates a T-shaped gate and source and drain contacts self-aligned with preexisting shallow junction regions. The present invention provides a l... | 09/21/1999 |
| 5938839 | Method for forming a semiconductor device A method for forming a semiconductor device is disclosed. The method comprises the step of irradiating a laser light to a surface of a semiconductor through a mask provided on said surface in an atmosphere comprising an impurity of one conductivity type t... | 08/17/1999 |
| 5929496 | Method and structure for channel length reduction in insulated gate field effect transistors A method and structure are provided for an IGFET which has a highly scalable short conduction channel length. The short channel IGFET functions more rapidly than do longer conduction channel devices. Lightly doped regions provide a graded extension or buf... | 07/27/1999 |
| 5882991 | Approaches for shallow junction formation A method for forming shallow junctions using rapid thermal gas-phase doping (RTGPD). A wafer (26) is placed in a process chamber (14). After evacuating the chamber, a dopant gas combined with a carrier gas is introduced to the chamber (14) while the press... | 03/16/1999 |
| 5871826 | Proximity laser doping technique for electronic materials This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film ... | 02/16/1999 |
| 5849043 | Apparatus for laser ion doping A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a meta... | 12/15/1998 |
| 5789292 | Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type op... | 08/04/1998 |
| 5641707 | Direct gas-phase doping of semiconductor wafers using an organic dopant source of phosphorus A direct doping method for semiconductor wafers, comprising the steps of providing a semiconductor wafer, exposing the surface of the wafer to a process medium in order to directly dope at least a portion of the surface of the wafer, wherein the process m... | 06/24/1997 |
| 5635422 | Diffusing dopants into a semiconductor wafer Dopants from a diffusion source (16) are diffused into a product wafer (14) to form a uniform doping concentration within the product wafer (14). The source (16) has a thermal conductivity that is approximately equal to a thermal conductivity of the wafer... | 06/03/1997 |
| 5599735 | Method for doped shallow junction formation using direct gas-phase doping Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping process... | 02/04/1997 |
| 5569615 | Method for forming a flash memory by forming shallow and deep regions adjacent the gate A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type op... | 10/29/1996 |
| 5565377 | Process for forming retrograde profiles in silicon A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses... | 10/15/1996 |
