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| Number | Title | Issue Date |
| 7326631 | Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another Consistent with an example embodiment, a method of manufacturing a semiconductor device comprises MOS transistors having gate electrodes formed in a number of metal layers deposited upon one another. Active silicon regions having a layer of a gate dielectric and fie... | 02/05/2008 |
| 7303967 | Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an... | 12/04/2007 |
| 6695903 | Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors The invention relates to novel boron, phosphorus or boron-aluminium dopant pastes for the production of p, p+ and n, n+ regions in monocrystalline and polycrystalline Si wafers, and of corresponding pastes for use as masking pastes in semiconductor fabric... | 02/24/2004 |
| 6610141 | Zinc oxide films containing p-type dopant and process for preparing same A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor con... | 08/26/2003 |
| 6555451 | Method for making shallow diffusion junctions in semiconductors using elemental doping A method is provided for making ultra-shallow diffused junctions using an elemental dopant. A semiconductor wafer is cleaned for providing a clean reaction surface. The cleaned wafer in loaded onto a stage located in a doping system. A quantity of element... | 04/29/2003 |
| 6475825 | Process for preparing zinc oxide films containing p-type dopant A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of... | 11/05/2002 |
| 6426280 | Method for doping spherical semiconductors A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains ... | 07/30/2002 |
| 6410162 | Zinc oxide films containing P-type dopant and process for preparing same A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net ... | 06/25/2002 |
| 6342313 | Oxide films and process for preparing same A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor con... | 01/29/2002 |
| 6331477 | Doping of spherical semiconductors during non-contact processing in the liquid state A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and a dopant. The semiconductor spheres are heated to a molten state. The dopant is absorbed by the semiconductor spheres. The semiconductor sphe... | 12/18/2001 |
| 6291085 | Zinc oxide films containing P-type dopant and process for preparing same A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of... | 09/18/2001 |
| 5871826 | Proximity laser doping technique for electronic materials This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film ... | 02/16/1999 |
| 5759909 | Method for manufacturing a silicon wafer by using a dopant foil A method for manufacturing a silicon wafer, in which a diffusion process takes place. During the diffusion process, a dopant foil is applied to one side, and a neutral foil to the other side. The silicon wafers are cut out by means of wire sawing out of a... | 06/02/1998 |
| 5656541 | Low temperature P2 O5 oxide diffusion source The present invention relates to a solid low temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 5 and R i... | 08/12/1997 |
| 5629234 | High temperature phosphorous oxide diffusion source The present invention relates to a solid high temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 3 and R ... | 05/13/1997 |
| 5532185 | Impurity doping method with adsorbed diffusion source The surface of a silicon wafer is cleaned to expose chemically active surface. Diborane gas is fed to the exposed active surface for adsorbing boron to the active surface. The adsorbed boron on the silicon wafer works as an impurity diffusion source. Boro... | 07/02/1996 |
| 5350461 | Low temperature P2 O5 oxide diffusion source The present invention relates to a solid low temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 5 and R i... | 09/27/1994 |
| 5350460 | High temperature phosphorus oxide diffusion source The present invention relates to a solid high temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 3 and R ... | 09/27/1994 |
| 5324686 | Method of manufacturing semiconductor device using hydrogen as a diffusion controlling substance A method of manufacturing a semiconductor device, which comprises the steps of forming a solid phase diffusion source containing a conductive impurity on a surface of a semiconductor substrate, said impurity serving to enable said semiconductor substrate ... | 06/28/1994 |
| 5208185 | Process for diffusing boron into semiconductor wafers In a boron diffusion process, a multiplicity of semiconductor wafers and pyrolytic boron nitride dopant disks are placed in a diffusion tube kept in an inert atmosphere at a high temperature, and boron diffusion is performed with hydrogen injection, the i... | 05/04/1993 |
| 5094976 | Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer A dopant film contains an organic binder, an inorganic binder and a compound of an impurity element for diffusion. Both surfaces of the dopant film are coated with adhesive. Releasable sheets sandwich the dopant film. The dopant film permits automated alt... | 03/10/1992 |
| 5073517 | Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer A dopant film contains an organic binder, an inorganic binder and a compound of an impurity element for diffusion. Both surfaces of the dopant film are coated with adhesive. Releasable sheets sandwich the dopant film. The dopant film permits automated alt... | 12/17/1991 |
| 5049524 | Cd diffusion in InP substrates A process for diffusing Cd into an InP substrate comprising: a. pre-heating a sealed tube containing red P and Cd3 P2 at the opening of a diffusion furnace; b. effecting the diffusion within the diffusion furnace; and c. furnace cooling the se... | 09/17/1991 |
| 5024867 | Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer A dopant film contains an organic binder, an inorganic binder and a compound of an impurity element for diffusion. Both surfaces of the dopant film are coated with adhesive. Releasable sheets sandwich the dopant film. The dopant film permits automated alt... | 06/18/1991 |
| 4929572 | Dopant of arsenic, method for the preparation thereof and method for doping of semiconductor therewith The dopant body of arsenic for doping of a semiconductor substrate, e.g., silicon wafer, is a sintered body of a powder mixture comprising silicon arsenide, silica and, optionally, arsenic oxide in a specified proportion. The dopant body can be easily pre... | 05/29/1990 |
| 4891331 | Method for doping silicon wafers using Al2 O3 /P2 O5 composition A doping composition and method for doping a silicon wafer with phosphorous in which the composition contains (A) a high purity Al2 O3 /P2 O5 compound having a mole ratio of P2 O5 /Al2 | 01/02/1990 |
| 4846902 | Solid diffusion source of GD oxide/P205 compound and method of making silicon wafer A doping composition having a high rate of P2 O5 evolution as indicated by a thick deposited glassy film of about 1500-2000 angstroms at a doping temperature of only 900° C. for one hour, the composition comprising a gadolinium oxid... | 07/11/1989 |
| 4798764 | Arsenate dopant sources and method of making the sources New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500°-1400° C. to relea... | 01/17/1989 |
| 4793862 | Silica-based antimony containing film-forming composition An improved silica-based film-forming composition for diffusion of antimony in the doping works of semiconductors is proposed which comprises an organic solvent, a partial hydrolysis product of an alkoxy silane compound and an antimony compound dissolved ... | 12/27/1988 |
| 4749615 | Semiconductor dopant source Semiconductor dopant sources are prepared by mixing particles of elemental silicon and at least one dopant oxide and heating the mixture to a temperature sufficient to initiate a reduction reaction while excluding external oxygen sources from affecting th... | 06/07/1988 |
| 4734386 | Boron nitride dopant source for diffusion doping A solid body formed by the chemical vapor-phase deposition of, for example, boron nitride is used as a solid dopant source for diffusion doping of semiconductor substrates in place of conventional sintered bodies of boron nitride. By virtue of the extreme... | 03/29/1988 |
| 4588455 | Planar diffusion source Planar diffusion sources are provided wherein the source is a wafer of inert material, preferably silicon or silicon dioxide and wherein the wafer acts as a substrate for a surface coating comprising a salt, preferably the oxide, of the dopant element. An... | 05/13/1986 |
| 4571366 | Process for forming a doped oxide film and doped semiconductor A process for forming a doped oxide film and a doped semiconductor suitable for electronic applications wherein a silicon tetraalkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorgano... | 02/18/1986 |
| 4525429 | Porous semiconductor dopant carriers New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon,... | 06/25/1985 |
| 4490192 | Stable suspensions of boron, phosphorus, antimony and arsenic dopants Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than ab... | 12/25/1984 |
| 4317680 | Diffusion source and method of preparing The present invention is directed to a diffusion source for establishing a p-type conductivity region in a semiconductor device and to a method for preparing such diffusion source. The diffusion source consists of pure silicon powder diffused with a p-typ... | 03/02/1982 |
| 4282282 | Barium aluminosilicate glasses, glass-ceramics and dopant Disclosed are thermally crystallizable glass compositions, glass ceramics and dopant hosts made therefrom, wherein said dopant hosts in thin wafer form have improved resistance to warpage, said compositions containing SiO2, Al2 O | 08/04/1981 |
| 4243427 | High concentration phosphoro-silica spin-on dopant A coating composition useful for forming a high concentration phosphoro-silica spin-on dopant is disclosed. The coating composition is formed by the steps of heating a solution of mono-aluminum phosphate, adding a methyl alcohol to the hot solution so as ... | 01/06/1981 |
| 4239560 | Open tube aluminum oxide disc diffusion A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable ... | 12/16/1980 |
| 4236948 | Process for doping semiconductor crystals Semiconductor crystals, especially silicon semiconductor crystals, are doped using a solution to which there are added a silicon dioxide film forming material, a p or n doping material and organic solvent, by applying this solution to the surface of the s... | 12/02/1980 |
