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| Number | Title | Issue Date |
| 7399692 | III-nitride semiconductor fabrication A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes. ... | 07/15/2008 |
| 7303967 | Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an... | 12/04/2007 |
| 5767533 | High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements A method of providing shallow acceptor and donor energy levels to produce higher conductivity semiconductor materials, relies on the coulombic pairing of donor and acceptor elements. One exemplary embodiment is applied to create shallow acceptor levels in... | 06/16/1998 |
| 5395794 | Method of treating semiconductor materials A method for treatment of semiconductor material wherein the material is exposed to electromagnetic radiation having a frequency in the range of the resonance frequency in order to alter the relative positions of interstitial impurity ions and lattice nod... | 03/07/1995 |
| 5374589 | Process of making a bistable photoconductive component Semi-insulating gallium arsenide wafers manufactured with varying silicon nsity shallow donors are copper compensated by heating to temperature of at least 550° C. to thermally diffuse the copper into the wafers and thereby provide deep copper acceptors ... | 12/20/1994 |
